NXP Semiconductors BZX284-C12,115

Overview

BZX284-C12,115 from NXP Semiconductors is a ±5% tolerance Zener voltage regulator diode in a SOD110 ceramic SMD package, rated for 12 V nominal working voltage at 5 mA test current, 400 mW total power dissipation, and 100 nA reverse current at 8 V reverse bias. It serves as a precision low-power voltage reference in power supply feedback paths, overvoltage clamping circuits, and analog signal conditioning stages.

For engineers reviewing the BZX284-C12,115 datasheet, BZX284-C12,115 pinout, BZX284-C12,115 application, or BZX284-C12,115 equivalent, key selection criteria include its ±5% voltage tolerance, 25–150 Ω differential resistance at 5 mA, 8.4 mV/K temperature coefficient, SOD110 footprint compatibility, and suitability for space-constrained industrial and consumer PCBs requiring stable 12 V regulation under low-current conditions.

Technical Context

The BZX284-C12,115 operates as a two-terminal silicon Zener diode optimized for stable reverse-bias breakdown regulation. Its junction temperature range spans −65 °C to +150 °C, with thermal resistance from junction to ambient of 315 K/W when mounted on a standard 11 × 25 × 1.6 mm PCB - confirming its use in passive, non-heatsinked applications.

Electrical behavior is defined by a 12 V nominal Zener voltage (11.4–12.7 V min/max), 25–150 Ω differential resistance at I_Z = 5 mA, and a positive temperature coefficient of +8.4 mV/K - indicating increasing breakdown voltage with rising temperature, critical for thermal stability analysis in feedback loops.

Key Specifications

Pinout & Package

SOD110 is a two-terminal surface-mount ceramic package with cathode marked by a band on one end. The device has no active pins - Terminal 1 is anode, Terminal 2 is cathode; polarity must be observed for correct Zener operation in reverse bias.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Compared with BZX284-C12,115, BZT52-C12 offers greater power headroom in a physically larger package, while BZX84-C12 trades thermal capability and leakage performance for minimal footprint - making BZX284-C12,115 the balanced choice for general-purpose 12 V regulation where SOD110 reliability and 400 mW rating are optimal.

Availability

BZX284-C12,115 is available at Aetrix Electronics and suitable for industrial power supplies, automotive body electronics, consumer appliance control boards, and IoT sensor nodes requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for BZX284-C12,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The BZX284 series was designed as a family of low-power, high-reliability Zener diodes targeting space-constrained, thermally demanding applications in consumer and industrial electronics - emphasizing ceramic SMD robustness and E24-standardized voltage coverage.

FAQ

What is the nominal Zener voltage and tolerance of the BZX284-C12,115?

The BZX284-C12,115 has a nominal Zener voltage of 12 V with a ±5% tolerance, meaning its actual breakdown voltage falls between 11.4 V and 12.7 V when tested at 5 mA. This tolerance is confirmed in Table 1 of the NXP datasheet and applies specifically to the "C" series variant, distinguishing it from the tighter ±2% "B" series. The BZX284-C12,115 is intended for applications where moderate voltage accuracy suffices without premium cost.

What package type does the BZX284-C12,115 use, and what are its dimensions?

The BZX284-C12,115 uses the SOD110 very small ceramic surface-mount package, measuring 2.10 mm × 1.40 mm × 1.60 mm (length × width × height) with a cathode identification band. This package is specified in the "PACKAGE OUTLINE" section of the NXP datasheet and is distinct from plastic SOD-123 or SOD-323 variants - its ceramic construction provides superior moisture resistance and thermal stability for harsh-environment deployments.

What is the maximum power dissipation and thermal resistance of the BZX284-C12,115?

The BZX284-C12,115 has a maximum total power dissipation of 400 mW at ambient temperature of 25 °C, with a thermal resistance from junction to ambient (R_{th j-a}) of 315 K/W when mounted on a standard 11 × 25 × 1.6 mm PCB. This means its junction temperature rises ~127 °C per watt - so at full 400 mW, ΔT ≈ 126 °C, limiting safe continuous operation to environments below ~24 °C ambient if junction max (150 °C) must not be exceeded. Derating is essential above 25 °C.

How does the temperature coefficient of the BZX284-C12,115 affect its performance?

The BZX284-C12,115 exhibits a positive temperature coefficient of +8.4 mV/K at 5 mA test current, meaning its Zener voltage increases by approximately 8.4 mV for every 1 K rise in junction temperature. This behavior is documented in Figure 4 of the NXP datasheet and is typical for Zeners above ~6 V. Designers must account for this drift in precision reference applications - for example, a 50 °C junction rise adds ~420 mV to the nominal 12 V, shifting regulation to ~12.42 V.

What is the reverse leakage current specification for the BZX284-C12,115, and under what conditions?

The BZX284-C12,115 specifies a maximum reverse current (I_R) of 100 nA at a reverse voltage (V_R) of 8 V and T_j = 25 °C, as listed in the "ELECTRICAL CHARACTERISTICS" table. This low leakage ensures minimal parasitic loading on high-impedance nodes - critical in battery-powered sensors or precision analog front-ends. Leakage increases exponentially with temperature and voltage, so operation near 12 V will exceed this value, but remains in the low-nA range up to ~10 V.