NXP Semiconductors BZX284-C3V0,115

Overview

BZX284-C3V0,115 from NXP Semiconductors is a ±5% tolerance Zener voltage regulator diode in a SOD110 ceramic SMD package, rated for 3.0 V nominal working voltage at 5 mA test current, 400 mW total power dissipation, and 10 μA reverse leakage at 1 V reverse bias. It serves as a precision low-power reference or clamp in power supply feedback paths, sensor biasing circuits, and overvoltage protection stages.

For engineers reviewing the BZX284-C3V0,115 datasheet, BZX284-C3V0,115 pinout, BZX284-C3V0,115 application, or BZX284-C3V0,115 equivalent, this page delivers verified electrical parameters, thermal resistance (315 K/W), differential resistance (325–500 Ω), temperature coefficient (−2.1 mV/K), and SOD110 package dimensions - all critical for stability analysis, PCB layout, and replacement selection in space-constrained designs.

Technical Context

The BZX284-C3V0,115 operates as a two-terminal silicon Zener diode optimized for stable voltage regulation under reverse-biased conditions. Its design targets low-current applications with IZtest = 5 mA, where it maintains a nominal 3.0 V output with ±5% tolerance across ambient temperatures from −65 °C to +150 °C.

It exhibits a negative temperature coefficient of −2.1 mV/K at 5 mA, indicating predictable voltage drift with junction heating, and features a differential resistance between 325 Ω (min) and 500 Ω (max), directly impacting regulation accuracy under varying load currents.

Key Specifications

Pinout & Package

SOD110 is a very small ceramic surface-mount package measuring 1.90 × 1.40 × 1.60 mm (L × W × H), with cathode identification via a mark on the top surface. The device has two terminals: anode and cathode, aligned in a single-row configuration suitable for automated placement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Compared with BZX284-C3V0,115, MMBZ5226BS-7-F offers tighter regulation at 3.3 V but sacrifices surge robustness and thermal margin, while BZX384-C3V0 matches voltage and tolerance in a smaller package but reduces power handling by 25% - both require layout and thermal revalidation.

Availability

BZX284-C3V0,115 is available at Aetrix Electronics and suitable for power supply feedback loops, sensor biasing networks, overvoltage clamping circuits, and microcontroller I/O protection requiring stable component supply and long-term obsolescence management.

Supply support for BZX284-C3V0,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The BZX284 series was developed to deliver reliable, low-cost Zener regulation in miniature ceramic packages for space-constrained consumer, industrial, and computing power management systems.

FAQ

What is the nominal Zener voltage and tolerance of the BZX284-C3V0,115?

The BZX284-C3V0,115 has a nominal Zener voltage of 3.0 V with a ±5% tolerance, meaning its actual breakdown voltage falls between 2.8 V and 3.2 V when tested at 5 mA. This specification is confirmed in Table 1 of the NXP datasheet and applies directly to the BZX284-C3V0,115 variant. The tolerance reflects manufacturing spread for cost-sensitive regulation tasks where tight accuracy is not required.

What package type does the BZX284-C3V0,115 use, and what are its key dimensions?

The BZX284-C3V0,115 uses the SOD110 ceramic surface-mount package, measuring 1.90 mm × 1.40 mm × 1.60 mm (length × width × height) with cathode identification marked on the top surface. This compact outline is defined in the "PACKAGE OUTLINE" section of the NXP datasheet and supports automated pick-and-place assembly. The SOD110 footprint requires precise stencil design due to its small pad pitch and ceramic body thermal characteristics.

What is the maximum reverse leakage current for the BZX284-C3V0,115, and under what condition is it specified?

The BZX284-C3V0,115 exhibits a maximum reverse leakage current (IR) of 10 μA at VR = 1 V, as specified in the "ELECTRICAL CHARACTERISTICS" table of the NXP datasheet. This value is measured at Tj = 25 °C and defines the diode's off-state current in bias or clamping configurations. Lower IR minimizes loading in high-impedance circuits - a key advantage over higher-leakage alternatives like general-purpose rectifiers.

How does the temperature coefficient of the BZX284-C3V0,115 affect its performance in real-world circuits?

The BZX284-C3V0,115 has a temperature coefficient (SZ) of −2.1 mV/K at IZ = 5 mA, meaning its Zener voltage decreases by approximately 2.1 mV for every 1 K rise in junction temperature. This behavior is documented in Figure 3 of the NXP datasheet and must be factored into thermal design - for example, a 50 K junction rise causes ~105 mV drop, which may shift regulation thresholds in precision analog stages unless compensated.

Can the BZX284-C3V0,115 be used as a direct replacement for the BZX284-B3V0 in existing designs?

No, the BZX284-C3V0,115 is not a direct replacement for the BZX284-B3V0 because it has ±5% tolerance versus the BZX284-B3V0's tighter ±2% tolerance - resulting in a wider voltage range (2.8–3.2 V vs. 2.94–3.06 V). While both share identical package, pinout, and basic electrical specs, the looser tolerance affects accuracy-critical applications such as ADC reference buffers or precision comparators where the BZX284-B3V0,115 is specified.