Nexperia USA Inc. BZX38450-B6V8X

Overview

BZX38450-B6V8X from Nexperia is a low-current Zener voltage regulator diode in SOD323 (SC-76) package, designed for precision voltage reference and biasing in ultra-low-power circuits. It delivers a nominal 6.8 V regulation at 50 µA test current, with ±2 % tolerance, 80 Ω differential resistance at 5 mA, and 1.2 mV/K temperature coefficient - enabling stable operation in battery-powered sensors and portable instrumentation.

For engineers reviewing the BZX38450-B6V8X datasheet, BZX38450-B6V8X pinout, BZX38450-B6V8X application, or BZX38450-B6V8X equivalent, key selection criteria include its 50 µA regulation point, 80 Ω dynamic impedance, 100 pF capacitance at 0 V, 300 mW power rating, and SOD323 thermal resistance of 110 K/W to solder point - critical for compact, thermally constrained designs.

Technical Context

This Zener diode operates in reverse breakdown mode with tightly controlled V_Z = 6.66–6.94 V at I_Z = 50 µA, optimized for low-bias applications where quiescent current must remain below 100 µA. Its differential resistance drops to 15 Ω at I_Z = 5 mA, supporting improved regulation under light load transients.

The device features intentional leakage current optimization per AN90031 for fast switching response and reduced noise in signal conditioning paths. Its junction-to-solder-point thermal resistance (110 K/W) enables reliable operation on standard FR4 PCBs without thermal vias.

Key Specifications

Pinout & Package

SOD323 (SC-76) surface-mount plastic package: 1.7 mm × 1.25 mm × 0.95 mm body, 1.3 mm lead pitch, single-sided copper FR4 mounting. Cathode identified by marking bar.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage reference applications.

Compared with MMBZ5235B-7-F and BZX84-C6V8, the BZX38450-B6V8X uniquely balances ±2 % accuracy, 50 µA regulation, and noise-optimized leakage - making it the only suitable choice for battery-constrained, high-precision analog subsystems where both accuracy and quiescent current are simultaneously constrained.

Availability

BZX38450-B6V8X is available at Aetrix Electronics and suitable for portable medical sensors, industrial wireless transmitters, and low-power IoT edge nodes requiring stable component supply with guaranteed long-term continuity.

Supply support for BZX38450-B6V8X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a leading semiconductor manufacturer specializing in high-performance, energy-efficient logic, discrete, and MOSFET devices, headquartered in Nijmegen, Netherlands.

The BZX38450 series belongs to Nexperia's precision low-current Zener portfolio, engineered specifically for ultra-low-power voltage reference and biasing in battery-operated and energy-harvesting systems.

FAQ

What is the maximum reverse voltage this diode can withstand before breakdown?

The BZX38450-B6V8X has a nominal Zener voltage of 6.8 V, with a guaranteed breakdown range of 6.66 V to 6.94 V at 50 µA. Its absolute maximum non-repetitive peak reverse voltage is not specified independently - it is governed by the 40 W surge rating at 100 µs pulse width, corresponding to ~250 V peak for a 100 ns rise time per IEC 60134 limiting values.

Can this Zener be used in place of a standard 6.8 V Zener in existing designs?

Yes, but only if the existing design operates at or near 50 µA bias current and uses an SOD323 footprint. Its ±2 % tolerance and low-current optimization differ from generic 6.8 V Zeners (e.g., ±5 %, 20 mA test current), so performance in higher-current or less precise applications may vary - verify regulation stability under actual load conditions.

How does the "intentional minor rise of leakage current" improve performance?

Per Application Note AN90031, the controlled increase in reverse leakage enhances carrier injection dynamics, reducing turn-on delay and minimizing switching-induced noise spikes. This makes the BZX38450-B6V8X especially effective in fast-settling reference paths and low-noise analog front-ends where conventional Zeners exhibit microphonic or transient artifacts.

Is thermal derating required above 25 °C ambient?

Yes. With R_th(j-a) = 415 K/W and P_tot = 300 mW at T_amb ≤ 25 °C, power must be linearly derated above that temperature. At 60 °C ambient, maximum allowable dissipation drops to 185 mW. Derating is based on FR4 PCB mounting with single-sided copper; actual performance depends on local copper area and airflow.