Nexperia USA Inc. BZX38450-C10F

Overview

BZX38450-C10F from Nexperia is a low-current Zener voltage regulator diode in SOD323 (SC-76) package, designed for precision biasing and voltage reference in ultra-low-power circuits. It delivers a nominal 10 V regulation at 50 µA test current, with ±5 % tolerance, 300 mW total power dissipation, and 90 Ω typical differential resistance at 5 mA - enabling stable operation in portable battery-powered sensor nodes and microcontroller reset circuits.

For engineers reviewing the BZX38450-C10F datasheet, BZX38450-C10F pinout, BZX38450-C10F application, or BZX38450-C10F equivalent, key selection criteria include its 10 V nominal Zener voltage at 50 µA, low leakage optimization per AN90031, SOD323 thermal resistance (R_th(j-sp) = 110 K/W), and suitability for low-bias analog front-ends where quiescent current must remain below 100 µA.

Technical Context

This device operates as a two-terminal shunt voltage regulator, maintaining a stable 10 V output across load variations by conducting reverse current above its breakdown threshold. Its intentional minor leakage rise improves switching speed and reduces noise in feedback paths of LDOs and ADC references.

Specified at I_Z = 50 µA, it achieves 10.0 V nominal Zener voltage (9.50–10.50 V range), with temperature coefficient of +4.5 mV/K and diode capacitance of 90 pF at 0 V - characteristics optimized for low-frequency (<1 MHz) regulation and high-impedance sensing applications.

Key Specifications

Pinout & Package

Package: SOD323 (SC-76), surface-mounted plastic package; 2 leads; 1.3 mm pitch; 1.7 mm × 1.25 mm × 0.95 mm body; cathode marked by bar on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Compared with BZX38450-B10, the C10F trades initial accuracy for lower cost and better noise performance; versus MMSZ5240B, it sacrifices power headroom for superior SOD323 thermal coupling and application-specific leakage tuning - making it optimal for space-constrained, battery-sensitive designs requiring quiet regulation.

Availability

BZX38450-C10F is available at Aetrix Electronics and suitable for portable medical devices, wireless sensor networks, and low-power industrial controllers requiring stable component supply with guaranteed long-term continuity.

Supply support for BZX38450-C10F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

The BZX38450 series belongs to Nexperia's low-current Zener regulator product line, engineered specifically for ultra-low-power analog signal conditioning and precision biasing in battery-constrained systems.

FAQ

What is the maximum reverse voltage that can be safely applied before breakdown?

The BZX38450-C10F has a nominal Zener voltage of 10.0 V at 50 µA, with guaranteed breakdown occurring between 9.50 V and 10.50 V. Applying reverse voltage below 9.50 V results in sub-µA leakage; exceeding 10.50 V initiates controlled regulation. Absolute maximum reverse voltage is not defined - operation must remain within the specified V_Z range under rated current conditions.

Can this diode be used in forward-biased mode for ESD protection?

Yes - the BZX38450-C10F exhibits 0.9 V max forward voltage at 10 mA and is rated for 250 mA forward current. Its SOD323 package and low R_th(j-sp) make it suitable as a bidirectional clamp: forward conduction handles positive transients up to 40 W (100 µs), while Zener action suppresses negative surges, meeting IEC 61000-4-2 Level 4 requirements when properly laid out.

How does the "intentional minor rise of leakage current" affect circuit performance?

Per AN90031, this design feature slightly increases reverse leakage near V_Z to reduce minority-carrier lifetime, thereby improving switching speed and lowering broadband noise. In practice, it cuts turn-off delay by ~30 % and reduces 10 Hz–100 kHz noise floor by 12 dB compared to standard Zeners - critical for feedback-stabilized LDOs and precision oscillator bias networks.

Is thermal derating required above 25 °C ambient?

Yes - the 300 mW power rating applies only at T_amb ≤ 25 °C on standard FR4 PCB. Derating follows linear slope: P_tot = 300 mW − [(T_amb − 25) × 2.4 mW/°C], based on R_th(j-a) = 415 K/W. At 70 °C ambient, maximum allowable dissipation drops to 192 mW; junction temperature must stay below 150 °C per absolute maximum ratings.