Nexperia USA Inc. BZX38450-C3V3-QX

Overview

BZX38450-C3V3-Q from Nexperia is a low-current Zener voltage regulator diode in SOD323 (SC-76) package, rated for 3.3 V nominal regulation at 50 µA test current, with ±5 % tolerance, 300 mW total power dissipation, and AEC-Q101 qualification for automotive use.

For engineers reviewing the BZX38450-C3V3-Q datasheet, BZX38450-C3V3-Q pinout, BZX38450-C3V3-Q application, or BZX38450-C3V3-Q equivalent, this device serves as a precision low-bias voltage reference in battery-powered sensor nodes, automotive body control modules, and portable instrumentation where stable 3.3 V clamping under microampere bias is required.

Technical Context

This Zener diode operates in reverse breakdown mode with a specified working voltage of 3.13 V to 3.47 V at I_Z = 50 µA, exhibiting a temperature coefficient of −3.5 mV/K and differential resistance ≤600 Ω at I_Z = 50 µA. Its low leakage (≤1.5 µA at V_R = 3.0 V) and 160 pF capacitance at 0 V support noise-sensitive analog front-ends.

Designed for AEC-Q101 compliance, it sustains junction temperatures up to 150 °C and ambient extremes from −55 °C to +150 °C, with thermal resistance from junction to ambient of 415 K/W on standard FR4 PCB - enabling reliable operation in under-hood automotive environments without forced cooling.

Key Specifications

Pinout & Package

SOD323 (SC-76) surface-mount plastic package: 1.7 mm × 1.25 mm × 0.95 mm body, 1.3 mm lead pitch, cathode marked by bar on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Compared with BZX38450-C3V3-Q, the BZX384-B3V3 offers tighter tolerance at higher bias current, while MMSZ4685T1G provides greater power handling in a larger package without automotive qualification - making the C3V3-Q optimal for space-constrained, low-power, AEC-compliant designs.

Availability

BZX38450-C3V3-Q is available at Aetrix Electronics and suitable for automotive body control units, portable medical sensor nodes, and industrial PLC input modules requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for BZX38450-C3V3-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.

The BZX38450-Q series belongs to Nexperia's AEC-Q101-qualified Zener diode portfolio, engineered specifically for low-current, low-noise voltage regulation in harsh-environment automotive and portable electronics.

FAQ

What is the maximum reverse voltage this diode can withstand before breakdown?

The BZX38450-C3V3-Q has a nominal Zener voltage of 3.3 V, with guaranteed breakdown occurring between 3.13 V and 3.47 V at 50 µA test current. Its absolute maximum non-repetitive peak reverse voltage is not specified independently - instead, it is governed by the 40 W non-repetitive surge rating at 100 µs pulse width, corresponding to ~110 V at 360 mA peak current under defined thermal conditions.

Does this part require a series resistor in typical Zener regulator configurations?

Yes - a series current-limiting resistor is mandatory to set the Zener bias current within its specified operating range (50 µA typical). For example, with a 5 V supply and target 50 µA current, a 34 kΩ resistor establishes proper bias while keeping power dissipation within the 300 mW limit and maintaining regulation stability across temperature.

How does the "C" suffix differ from "B" in the BZX38450-Q series?

The "C" suffix denotes ±5 % voltage tolerance and optimized leakage characteristics for fast switching and noise reduction, whereas "B" indicates ±2 % tolerance and standard leakage. The C-series uses intentional minor leakage rise to improve dynamic response - critical in signal integrity-sensitive applications like sensor biasing and analog front-ends.

Can this diode be used in parallel for higher current capability?

No - Zener diodes must not be paralleled due to mismatched breakdown voltages causing current hogging and thermal runaway. Each BZX38450-C3V3-Q is designed for single-device operation up to 250 mA forward current or regulated reverse bias at ≤300 mW; higher current requirements demand alternative topology such as active regulation or higher-power Zeners with matched characteristics.