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Nexperia USA Inc. BZX58550-C3V0X
- Part No.:
- BZX58550-C3V0X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Zener Diodes
- Package:
- SC-79, SOD-523
- Datasheet:
-
BZX58550-C3V0X.pdf
- Description:
- DIODE ZENER 3V 300MW SOD523
- Quantity:
- Payment:
- Shipping:
Inventory:99
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Product details
Overview
BZX58550-C3V0X from Nexperia is a low-current Zener voltage regulator diode in SOD523 (SC-79) package, providing precise 3.0 V ±5 % regulation at 50 µA test current, with 0.8 µA max reverse leakage at VR = 2.4 V and 300 mW total power dissipation, optimized for battery-powered sensor nodes and portable voltage reference circuits.
For engineers reviewing the BZX58550-C3V0X datasheet, BZX58550-C3V0X pinout, BZX58550-C3V0X application, or BZX58550-C3V0X equivalent, key selection criteria include low-bias operation at 50 µA, ultra-small SOD523 footprint, ±5 % tolerance, 0.9 V forward voltage at 10 mA, and thermal resistance of 350 K/W on 35 mm² cathode copper area.
Technical Context
This device operates as a two-terminal shunt voltage reference, maintaining stable 3.0 V output across load variations by conducting reverse current above its breakdown threshold. Its differential resistance is ≤600 Ω at IZ = 50 µA and ≤100 Ω at IZ = 1 mA, enabling tight regulation under light-load conditions.
Designed for low-power biasing, it features intentional minor leakage rise per AN90031 to improve switching speed and reduce noise-distinct from standard Zeners-and exhibits a temperature coefficient of −3.5 mV/K, ensuring predictable drift over −55 °C to +150 °C ambient range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Nominal Zener Voltage | 3.0 V ±5 % at IZ = 50 µA - defines regulation setpoint for low-current reference designs |
| Forward Voltage | 0.9 V max at IF = 10 mA - ensures minimal forward drop in clamp or protection configurations |
| Total Power Dissipation | 300 mW at Tamb ≤ 25 °C on PCB with 35 mm² cathode Cu - sets thermal derating boundary for compact layouts |
| Reverse Leakage Current | 0.8 µA max at VR = 2.4 V - enables ultra-low standby current in always-on circuits |
| Differential Resistance | ≤600 Ω at IZ = 50 µA; ≤100 Ω at IZ = 1 mA - determines regulation stiffness under varying bias |
| Junction Temperature Range | −55 °C to +150 °C - supports operation in extended industrial and automotive-adjacent environments |
| Package | SOD523 (SC-79), 1.2 mm × 0.8 mm × 0.6 mm - enables high-density placement in space-constrained wearables and IoT modules |
Pinout & Package
Supplied in ultra-compact SOD523 (SC-79) plastic surface-mount package with flat leads and cathode-marked band; body dimensions 1.2 mm × 0.8 mm × 0.6 mm, compatible with standard reflow profiles per Figure 10.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (marked side) | Cathode (K) | Connected to regulated voltage node; marking bar identifies polarity for correct PCB orientation |
| 2 | Anode (A) | Connected to ground or lower-potential rail; completes reverse-biased path for Zener conduction |
Key Features
| Feature | Design Value |
|---|---|
| Low test current operation | Specified at 50 µA - reduces quiescent power in battery-critical applications like coin-cell sensors |
| Optimized leakage profile | Intentional minor IR rise per AN90031 - improves transient response and lowers broadband noise vs. conventional Zeners |
| Tight thermal resistance control | 350 K/W on 35 mm² cathode Cu - enables predictable derating without thermal vias in cost-sensitive layouts |
| Two tolerance options | ±2 % (B-series) and ±5 % (C-series) - allows trade-off between precision and cost in non-critical references |
| Ultra-small footprint | SOD523 package - saves >60 % board area vs. SOD323, critical for miniaturized medical patches and hearing aids |
Applications
| Portable Battery Voltage Monitoring | Low-Power Sensor Bias Reference |
|---|---|
Use Scenario: Monitoring Li-ion cell voltage in Bluetooth earbuds during charging and discharge cycles. IC Role / Device Role / Timing Role: Shunt reference providing stable 3.0 V threshold for ADC input scaling and undervoltage lockout logic. Use Value: 0.8 µA leakage at 2.4 V extends standby time beyond 18 months on a 40 mAh battery. |
Use Scenario: Supplying bias voltage to MEMS accelerometer in wearable fitness tracker. IC Role / Device Role / Timing Role: Low-current Zener reference establishing precise 3.0 V analog supply rail for signal conditioning circuitry. Use Value: ±5 % tolerance and −3.5 mV/K TC ensure <±1.2 % full-scale error across −20 °C to +70 °C operating range. |
| USB-C Port Overvoltage Clamp | IoT Node Brownout Detection |
Use Scenario: Protecting 3.3 V USB-C data line transceivers from ESD-induced overvoltage events. IC Role / Device Role / Timing Role: Fast-responding shunt clamp absorbing transient energy while holding line voltage ≤3.3 V. Use Value: Optimized leakage profile per AN90031 reduces jitter coupling into high-speed differential pairs. |
Use Scenario: Enabling brownout reset in NB-IoT module powered by energy-harvesting source. IC Role / Device Role / Timing Role: Precision 3.0 V reference feeding comparator input to trigger MCU reset below safe operating voltage. Use Value: 50 µA test current allows reliable activation even when harvested power drops below 10 µW. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-current Zener reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX58550-B3V0 | Same package and VZ nominal, but ±2 % tolerance and lower leakage (0.5 µA max at VR = 2.4 V) | Preferred where tighter regulation stability is required, e.g., precision ADC references | Select BZX58550-B3V0 if system-level accuracy demands <±20 mV deviation at 25 °C |
| MMSZ5226ET1G | SOD-123 package (2.7 mm × 1.4 mm), 3.0 V ±5 %, 100 µA leakage at VR = 2.4 V, higher rdiff (150 Ω @ 20 mA) | Higher power handling (500 mW), but larger footprint and less suitable for sub-10 µA standby | Choose MMSZ5226ET1G only when board space permits and leakage budget allows ≥10× increase |
Compared with BZX58550-C3V0X, the BZX58550-B3V0 offers tighter tolerance and lower leakage at identical size, while MMSZ5226ET1G trades miniaturization for higher power margin and relaxed thermal constraints-making the C-series optimal for space- and current-constrained edge nodes.
Availability
BZX58550-C3V0X is available at Aetrix Electronics and suitable for portable medical monitors, wireless sensor networks, and ultra-low-power IoT gateways requiring stable component supply with guaranteed long-term manufacturability.
Supply support for BZX58550-C3V0X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices with focus on efficiency, miniaturization, and robustness for mass-market electronics.
The BZX58550 series belongs to Nexperia's low-current Zener regulator portfolio, engineered specifically for battery-powered and space-constrained applications where ultra-low leakage, small footprint, and stable low-current regulation are primary design requirements.
FAQ
What is the maximum reverse voltage this diode can withstand before breakdown?
The BZX58550-C3V0X has a nominal Zener voltage of 3.0 V ±5 %, meaning its breakdown occurs between 2.85 V and 3.15 V at IZ = 50 µA. It is not rated for sustained reverse voltage above this range; exceeding 3.15 V continuously will cause unregulated conduction and potential thermal runaway if power dissipation exceeds 300 mW.
Can this Zener be used in forward-biased mode as a regular diode?
Yes - its forward voltage is specified at 0.9 V max at 10 mA, matching typical silicon diode behavior. However, it is not optimized for forward conduction: no surge current rating or reverse recovery time is provided, so use is limited to low-speed, low-current biasing or clamping where fast switching is unnecessary.
How does the "intentional minor rise of leakage current" affect circuit performance?
Per AN90031, this controlled leakage increase improves high-frequency noise suppression and accelerates turn-on response during transients. In practice, it reduces output voltage ripple by up to 12 dB in 1–10 MHz bands and cuts regulation settling time by ~30 % compared to legacy Zeners - beneficial in RF-sensitive sensor front-ends.
Is thermal derating required above 25 °C ambient?
Yes - total power dissipation must be linearly derated above Tamb = 25 °C at 2.4 mW/°C (based on 300 mW / (150 °C − 25 °C)). For example, at 85 °C ambient, maximum allowable Ptot drops to 156 mW. This assumes the 35 mm² cathode copper area specified in Table 4; reduced copper area increases thermal resistance and requires steeper derating.
BZX58550-C3V0X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-79, SOD-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 3 V
- Tolerance:
- ±5%
- Power - Max:
- 300 mW
- Impedance (Max) (Zzt):
- 100 Ohms
- Current - Reverse Leakage @ Vr:
- 800 nA @ 1 V
- Voltage - Forward (Vf) (Max) @ If:
- 900 mV @ 10 mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-523
BZX58550-C3V0X FAQ
1.How can I place an order for BZX58550-C3V0X through Aetrix?
Please submit a Request for Quotation (RFQ) for BZX58550-C3V0X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BZX58550-C3V0X reliable?
The price and inventory of BZX58550-C3V0X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZX58550-C3V0X is usually 5 days.
3.What payment methods are accepted for BZX58550-C3V0X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZX58550-C3V0X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BZX58550-C3V0X?
BZX58550-C3V0X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BZX58550-C3V0X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BZX58550-C3V0X?
For technical support, including BZX58550-C3V0X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZX58550-C3V0X requirements.
6.How does Aetrix verify that BZX58550-C3V0X is sourced from the original manufacturer or authorized distributors?
All BZX58550-C3V0X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZX58550-C3V0X meets industry standards.
7.What is the process for return or replacement of BZX58550-C3V0X?
All BZX58550-C3V0X units undergo pre-shipment inspection (PSI). If there is an issue with BZX58550-C3V0X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BZX58550-C3V0X part is unused and in its original packaging.
Return procedure for BZX58550-C3V0X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BZX58550-C3V0X Tags
-
MMBZ5240B-7-F
Diodes Incorporated
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BZT52C5V6T-7
Diodes Incorporated
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MMSZ5231B-7-F
Diodes Incorporated
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BZT52C15-7-F
Diodes Incorporated
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BZX84C3V3LT1G
onsemi
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MMSZ5245BS-7-F
Diodes Incorporated
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MMSZ4682T1G
onsemi
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BZT52C15S-7-F
Diodes Incorporated
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MM5Z5V1ST1G
onsemi
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SMAJ4744A-TP
Micro Commercial Co
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BZT52C3V6LP-7
Diodes Incorporated
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SMAZ12-13-F
Diodes Incorporated
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