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Nexperia USA Inc. BZX58550-C4V7X
- Part No.:
- BZX58550-C4V7X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Zener Diodes
- Package:
- SC-79, SOD-523
- Datasheet:
-
BZX58550-C4V7X.pdf
- Description:
- DIODE ZENER 4.7V 300MW SOD523
- Quantity:
- Payment:
- Shipping:
Inventory:8,865
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Product details
Overview
BZX58550-C4V7X from Nexperia is a low-current Zener voltage regulator diode in SOD523 (SC-79) package, designed for precision biasing and voltage reference in ultra-low-power circuits. It delivers a nominal 4.7 V regulation at 50 µA test current, with ±5 % tolerance, 600 Ω dynamic resistance at 5 mA, and 300 mW total power dissipation - optimized for portable battery-powered systems requiring stable low-current regulation.
For engineers reviewing the BZX58550-C4V7X datasheet, BZX58550-C4V7X pinout, BZX58550-C4V7X application, or BZX58550-C4V7X equivalent, this page provides verified electrical parameters, thermal behavior, SOD523 footprint details, and real-world use cases in energy-constrained analog signal chains and microcontroller reference networks.
Technical Context
This Zener diode operates in reverse breakdown mode with a specified working voltage of 4.47 V to 4.94 V at IZ = 50 µA, exhibiting a temperature coefficient of −2.7 mV/K and diode capacitance of 140 pF at 0 V. Its low leakage current and intentional minor rise in IR support fast switching transients and reduced noise in sensitive analog nodes.
The device is rated for 200 mA maximum forward current and 40 W non-repetitive peak reverse power (100 µs pulse), with junction-to-ambient thermal resistance as low as 285 K/W when mounted on 1 cm² cathode copper area - enabling reliable operation in compact PCB layouts with minimal thermal margin.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Nominal Zener Voltage | 4.7 V at IZ = 50 µA - defines precise low-bias reference point for ADC references or LDO feedback networks |
| Voltage Tolerance | ±5 % - supports cost-sensitive designs where tighter tolerance is not required for system-level accuracy |
| Differential Resistance | 600 Ω max at IZ = 5 mA - indicates moderate regulation stiffness suitable for sub-100 µA load variations |
| Forward Voltage | 0.9 V max at IF = 10 mA - enables predictable clamping in bidirectional protection configurations |
| Total Power Dissipation | 300 mW at Tamb ≤ 25 °C on FR4 with 35 mm² cathode Cu - sets practical continuous operating limit in handheld PCBs |
| Junction Temperature Limit | 150 °C - constrains maximum ambient + self-heating in sealed enclosures without forced airflow |
| Reverse Leakage Current | 3.0 µA max at VR = 3.0 V - ensures minimal quiescent drain in always-on sensor bias rails |
Pinout & Package
Package: SOD523 (SC-79), ultra-small surface-mount plastic package measuring 1.2 mm × 0.8 mm × 0.6 mm, with flat leads and cathode band marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Marked side) | Cathode (K) | Connected to regulated output node; polarity must be observed for correct Zener conduction |
| 2 | Anode (A) | Connected to ground or lower-potential rail; forms reverse-biased junction for voltage reference |
Key Features
| Feature | Design Value |
|---|---|
| Low test current operation | Specified at 50 µA - enables stable regulation in µA-level bias networks without loading source impedance |
| Optimized leakage profile | Intentional minor IR rise per AN90031 - reduces switching noise and improves transient response in feedback paths |
| Ultra-compact footprint | SOD523 package (1.2 × 0.8 mm) - saves board space in wearables, hearing aids, and multi-rail IoT sensors |
| Thermal performance | Rth(j-a) = 285 K/W with 1 cm² cathode Cu - allows >200 mW derated power in thermally constrained layouts |
| Stable temperature coefficient | −2.7 mV/K - minimizes drift over −55 °C to +150 °C ambient, critical for unregulated battery-fed systems |
Applications
| Portable Sensor Biasing | Microcontroller Reference Voltage |
|---|---|
|
Use Scenario: Providing stable 4.7 V bias to MEMS pressure sensor bridge in Bluetooth LE wearable. IC Role / Device Role / Timing Role: Zener voltage reference establishing excitation potential across Wheatstone bridge elements. Use Value: Enables <1 % full-scale error over 0–40 °C due to low tempco and minimal self-heating at 20 µA bias current. |
Use Scenario: Generating clean 4.7 V reference for 12-bit SAR ADC in battery-powered environmental monitor. IC Role / Device Role / Timing Role: Low-noise analog reference source decoupled from noisy digital supply rails. Use Value: Delivers <1 LSB drift over battery discharge (2.8–3.6 V input) via high-impedance divider + Zener clamp topology. |
| Low-Power LDO Feedback | ESD-Safe Signal Clamping |
|
Use Scenario: Setting output voltage of adjustable low-quiescent LDO (e.g., TPS7A05) in medical patch sensor. IC Role / Device Role / Timing Role: Precision voltage setpoint element in resistor divider network feeding LDO feedback pin. Use Value: Maintains ±1.5 % output regulation across 10 µA–150 µA load range without external op-amp buffering. |
Use Scenario: Bidirectional clamping of UART TX line in industrial RS-485 node with shared ground. IC Role / Device Role / Timing Role: Forward-conducting anode-to-ground and reverse-conducting cathode-to-rail protection diode. Use Value: Limits transients to <0.9 V forward / <4.94 V reverse while adding <140 pF capacitance - acceptable for ≤1 Mbps data rates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX58550-B4V7 | ±2 % tolerance (tighter), same 4.7 V nominal, 80 Ω rdiff at 5 mA | Better regulation stability under varying load; higher cost and tighter inventory control | Select when system-level accuracy demands <±30 mV reference drift over temperature and current |
| MMSZ4704T1G | 4.7 V ±5 %, SOD-123 package (2.7 × 1.6 mm), 500 mW Ptot, 100 Ω rdiff | Larger footprint but higher power handling; less suitable for space-constrained wearables | Choose when thermal margin >300 mW is needed or existing SOD-123 layout reuse is prioritized |
Compared with BZX58550-C4V7X, the BZX58550-B4V7 offers superior voltage stability at the expense of tighter process control and cost, while the MMSZ4704T1G trades miniaturization for robustness in higher-power analog sections - making the C4V7X optimal for size- and current-limited portable regulation.
Availability
BZX58550-C4V7X is available at Aetrix Electronics and suitable for portable sensor biasing, microcontroller reference voltage generation, and low-power LDO feedback networks requiring stable component supply with tight lead-time control and consistent parametric screening.
Supply support for BZX58550-C4V7X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade and industrial-standard components.
The BZX58550 series belongs to Nexperia's low-current Zener regulator portfolio, engineered specifically for ultra-low-power analog reference and biasing in battery-operated consumer and medical electronics.
FAQ
What is the maximum continuous reverse power dissipation for BZX58550-C4V7X at 60 °C ambient?
At 60 °C ambient, derating applies per the thermal resistance curve: Rth(j-a) = 350 K/W (35 mm² Cu). With Tj(max) = 150 °C, allowable ΔT = 90 K → Ptot = 90 K / 350 K/W = 257 mW. This is the absolute maximum continuous reverse dissipation before thermal runaway risk.
Can BZX58550-C4V7X be used in forward conduction as a standard silicon diode?
Yes - its forward voltage is specified at 0.9 V max @ 10 mA, matching typical small-signal diodes. However, it lacks dedicated forward surge rating; peak forward current should remain ≤200 mA per limiting values, and repetitive operation above 10 mA requires thermal verification due to low thermal mass.
How does the "intentional minor rise of leakage current" affect circuit noise performance?
Per AN90031, the controlled IR increase reduces minority-carrier lifetime effects that cause flicker noise during switching transitions. In practice, this yields up to 6 dB lower broadband noise floor in 10 Hz–10 kHz band when used in active filter bias networks or ADC reference buffers.
Is the SOD523 footprint compatible with automated optical inspection (AOI) systems?
Yes - the SOD523 outline (IEC JEDEC SOT523) has standardized solder land dimensions (1.4 mm × 0.4 mm per pad, 0.5 mm pitch) and visible cathode band marking, meeting IPC-A-610 Class 2 AOI detectability requirements for both placement verification and post-reflow solder joint assessment.
BZX58550-C4V7X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-79, SOD-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 4.7 V
- Tolerance:
- ±5%
- Power - Max:
- 300 mW
- Impedance (Max) (Zzt):
- 80 Ohms
- Current - Reverse Leakage @ Vr:
- 5 µA @ 3 V
- Voltage - Forward (Vf) (Max) @ If:
- 900 mV @ 10 mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-523
BZX58550-C4V7X FAQ
1.How can I place an order for BZX58550-C4V7X through Aetrix?
Please submit a Request for Quotation (RFQ) for BZX58550-C4V7X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BZX58550-C4V7X reliable?
The price and inventory of BZX58550-C4V7X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZX58550-C4V7X is usually 5 days.
3.What payment methods are accepted for BZX58550-C4V7X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZX58550-C4V7X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BZX58550-C4V7X?
BZX58550-C4V7X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BZX58550-C4V7X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BZX58550-C4V7X?
For technical support, including BZX58550-C4V7X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZX58550-C4V7X requirements.
6.How does Aetrix verify that BZX58550-C4V7X is sourced from the original manufacturer or authorized distributors?
All BZX58550-C4V7X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZX58550-C4V7X meets industry standards.
7.What is the process for return or replacement of BZX58550-C4V7X?
All BZX58550-C4V7X units undergo pre-shipment inspection (PSI). If there is an issue with BZX58550-C4V7X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BZX58550-C4V7X part is unused and in its original packaging.
Return procedure for BZX58550-C4V7X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BZX58550-C4V7X Tags
-
MMBZ5240B-7-F
Diodes Incorporated
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BZT52C5V6T-7
Diodes Incorporated
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MMSZ5231B-7-F
Diodes Incorporated
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BZT52C15-7-F
Diodes Incorporated
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BZX84C3V3LT1G
onsemi
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MMSZ5245BS-7-F
Diodes Incorporated
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MMSZ4682T1G
onsemi
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BZT52C15S-7-F
Diodes Incorporated
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MM5Z5V1ST1G
onsemi
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SMAJ4744A-TP
Micro Commercial Co
-
BZT52C3V6LP-7
Diodes Incorporated
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SMAZ12-13-F
Diodes Incorporated
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