Nexperia USA Inc. BZX79-C47,113

Overview

BZX79-C47,113 from Nexperia is a ±5% tolerance Zener voltage regulator diode in a hermetically sealed SOD27 (DO-35) glass package, rated for 47 V nominal working voltage at 2 mA test current, 500 mW total power dissipation at 50 °C ambient, and 40 W non-repetitive peak reverse power. It serves as a low-power voltage reference in analog signal conditioning circuits and power supply feedback networks.

For engineers reviewing the BZX79-C47,113 datasheet, BZX79-C47,113 pinout, BZX79-C47,113 application, or BZX79-C47,113 equivalent, key selection criteria include Zener voltage tolerance (±5%), differential resistance (85 Ω max at 2 mA), temperature coefficient (+50 mV/K typical), junction-to-ambient thermal resistance (380 K/W), and reverse leakage (50 nA at 0.7×V_Znom).

Technical Context

This device operates in reverse-biased Zener breakdown mode to maintain stable DC voltage under varying load or input conditions. Its 47 V nominal regulation is specified at I_Ztest = 2 mA with differential resistance ≤85 Ω (typical 50 Ω), enabling predictable error budgeting in precision reference designs.

The diode exhibits a positive temperature coefficient of +50 mV/K (typical) at 2 mA, indicating voltage increases with junction temperature - critical for thermal drift analysis in unregulated environments. Its 380 K/W junction-to-ambient thermal resistance reflects standard axial-lead PCB mounting without heatsinking.

Key Specifications

Pinout & Package

Two-terminal axial-leaded device in SOD27 (DO-35) hermetically sealed glass package. Cathode identified by colored band; anode is unmarked lead.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage reference applications.

Compared with BZX79-C47,113, the 1N4750A offers lower impedance and higher power but requires DO-41 layout changes, while BZX85C47 provides robust surge immunity and thermal margin at the cost of footprint size - both trade off compactness for enhanced electrical or thermal headroom.

Availability

BZX79-C47,113 is available at Aetrix Electronics and suitable for industrial power supplies, telecom surge protection circuits, and precision analog reference designs requiring stable component supply and long-lifecycle support.

Supply support for BZX79-C47,113 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, serving automotive, industrial, computing, and consumer markets with high-volume, high-reliability components.

The BZX79 series belongs to Nexperia's standard Zener diode portfolio, designed specifically for cost-sensitive, low-power voltage regulation and reference applications in through-hole assembled systems.

FAQ

What is the maximum continuous power dissipation for BZX79-C47,113?

The BZX79-C47,113 is rated for 500 mW total power dissipation at an ambient temperature of 50 °C with standard PCB mounting (lead length ≤8 mm). At higher ambient temperatures, derating is required per the thermal resistance of 380 K/W - for example, at 70 °C ambient, maximum allowable power drops to approximately 395 mW.

How does the temperature coefficient affect regulation accuracy?

The BZX79-C47,113 has a typical temperature coefficient of +50 mV/K at 2 mA, meaning its Zener voltage increases by ~2.35 V over a 47 °C junction temperature rise. This must be factored into system-level drift budgets - for instance, in a 0–70 °C ambient design with self-heating, total V_Z shift may reach ±1.8 V, limiting use in high-precision references.

Can BZX79-C47,113 be used for transient voltage suppression?

Yes - it supports non-repetitive peak reverse power dissipation of 40 W for 100 μs pulses, making it suitable for clamping short-duration transients like ESD or inductive kickback. However, it is not rated for repetitive surges or standardized TVS waveforms (e.g., IEC 61000-4-5), so dedicated TVS diodes are preferred for sustained surge protection.

What is the reverse leakage current at nominal operating voltage?

At V_R = 32.9 V (0.7 × 47 V), the maximum reverse leakage current is 50 nA at T_j = 25 °C. At full 47 V bias, leakage rises significantly - datasheet data shows ~200 nA at V_R = 47 V for similar types - confirming its suitability only for low-current reference applications, not high-impedance sensing above 40 V.