onsemi BZX79C6V2RL

Overview

BZX79C6V2RL from onsemi is a 500 mW, DO-35 glass-encapsulated Zener diode with nominal reverse breakdown voltage of 6.2 V at 5 mA test current, ±5% tolerance (5.89–6.51 V), dynamic impedance of 3 Ω at I_ZT, and temperature coefficient of +0.4 mV/°C - used for precision voltage reference and overvoltage protection in low-power analog circuits.

For engineers reviewing the BZX79C6V2RL datasheet, pinout, applications, or equivalent options, this part serves as a stable, ESD-hardened (Class 3, >16 kV HBM) voltage clamp in power supply feedback paths, sensor biasing networks, and microcontroller reset supervision where axial-leaded hermetic reliability and tight V_Z tolerance are required.

Technical Context

This Zener diode employs silicon-oxide passivated junction technology to achieve stable reverse breakdown characteristics across –65°C to +200°C operating range, with metallurgically bonded double-slug construction enhancing thermal transfer from junction to leads. Its DO-204AH (DO-35) package enables reliable operation under humidity, vibration, and thermal cycling stress.

The device exhibits low leakage current (≤10 µA at 4.96 V), forward voltage ≤1.5 V at 100 mA, and typical capacitance of 90 pF at 1 MHz - making it suitable for DC regulation and low-frequency clamping rather than RF or high-speed transient suppression.

Key Specifications

Pinout & Package

DO-35 (DO-204AH) axial-lead glass package: hermetically sealed double-slug construction, cathode indicated by painted band, lead length ≥3/8″ for rated power dissipation, max solder temperature 230°C at 1/16″ from case for 10 seconds.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage reference applications.

Compared with 1N4735A and MMSZ4685, the BZX79C6V2RL offers superior ESD hardness, hermetic reliability, and lower dynamic impedance - making it the preferred choice for mission-critical analog references where long-term stability and environmental resilience are mandatory.

Availability

BZX79C6V2RL is available at Aetrix Electronics and suitable for power supply feedback networks, sensor biasing circuits, microcontroller reset supervision, and overvoltage clamp protection requiring stable component supply and full traceability.

Supply support for BZX79C6V2RL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier focused on energy-efficient innovation, delivering silicon solutions for automotive, industrial, cloud, medical, and IoT applications.

The BZX79C6V2RL belongs to the BZX79C series of 500 mW Zener regulators designed specifically for precision voltage reference and clamping in cost-sensitive, high-reliability analog systems where hermetic sealing and ESD robustness are essential.

FAQ

What is the maximum steady-state power dissipation for BZX79C6V2RL?

The BZX79C6V2RL has a maximum steady-state power dissipation of 500 mW at lead temperature (T_L) ≤ 75°C. Above 75°C, it must be derated at 4.0 mW/°C. This rating assumes 3/8″ lead length to heat sink and defines the upper limit for continuous DC operation without thermal runaway.

Does BZX79C6V2RL have a specified temperature coefficient, and how does it affect circuit performance?

Yes, the BZX79C6V2RL has a typical temperature coefficient of +0.4 mV/°C over –55°C to +150°C. This means its Zener voltage increases by approximately 0.4 mV per degree Celsius rise in junction temperature - enabling predictable drift compensation in temperature-critical references like sensor excitation or calibration standards.

Can BZX79C6V2RL be used as a direct replacement for 1N4735A in existing designs?

The BZX79C6V2RL shares the same nominal 6.2 V Zener voltage and DO-35 package as the 1N4735A, but features tighter dynamic impedance (3 Ω vs. 5 Ω) and higher ESD rating (>16 kV vs. 8 kV). It is mechanically interchangeable, though design validation is recommended due to differences in leakage and thermal response.

What is the reverse leakage current specification for BZX79C6V2RL at 80% of nominal V_Z?

At V_R = 4.96 V (80% of 6.2 V), the BZX79C6V2RL exhibits a maximum reverse leakage current of 10 µA at T_A = 25°C. This low leakage supports high-impedance bias networks and minimizes error in precision voltage references where current draw must be negligible.

Is BZX79C6V2RL suitable for surge protection applications such as ESD or lightning-induced transients?

The BZX79C6V2RL is rated for Class 3 ESD (>16 kV HBM) and can clamp short-duration transients, but it is not optimized for high-energy surge events. Its 500 mW power rating and non-avalanche-rated structure make it appropriate for board-level ESD protection and low-energy clamping - not for primary lightning or AC-line surge suppression.