onsemi BZX84C10_S00Z

Overview

BZX84C10_S00Z from ON Semiconductor is a 10 V ±5% tolerance surface-mount Zener diode in SOT-23 package, rated for 250 mW power dissipation at 25°C ambient, with 9.4–10.7 V zener voltage at test currents of 1.0–20 mA and dynamic impedance as low as 10 Ω at 20 mA - used for precision voltage regulation and overvoltage protection in low-power analog circuits.

For engineers reviewing the BZX84C10_S00Z datasheet, pinout, applications, or equivalent options, key selection criteria include zener voltage tolerance, dynamic impedance at operating current, reverse leakage at specified VR, thermal resistance (R_JA = 465°C/W), and SOT-23 footprint compatibility with space-constrained PCB layouts.

Technical Context

The BZX84C10_S00Z operates as a silicon planar epitaxial Zener diode optimized for stable voltage reference and clamping functions in DC bias networks. It exhibits a positive temperature coefficient of +4.5 mV/°C at I_Z = 5 mA and reverse leakage current ≤0.2 µA at V_R = 7.0 V.

Its junction-to-ambient thermal resistance (465°C/W) and junction-to-lead value (220°C/W) define its derating behavior under sustained power dissipation; maximum operating junction temperature is 150°C, with storage range spanning –55°C to +150°C.

Key Specifications

Pinout & Package

Package: SOT-23 (TO-236AB), 3-terminal plastic surface-mount package with cathode marked by band. Standard lead finish: matte tin.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with MMBZ5240BS-7-F and 1SMA5917BT3G, the BZX84C10_S00Z delivers optimal balance of SOT-23 compactness, 250 mW steady-state rating, and 10 Ω dynamic impedance - making it preferred for space-limited, low-to-moderate power analog subsystems requiring consistent 10 V reference stability.

Availability

BZX84C10_S00Z is available at Aetrix Electronics and suitable for power supply reference, overvoltage clamp, and current source bias applications requiring stable component supply, consistent parametric performance, and long-term obsolescence management.

Supply support for BZX84C10_S00Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The BZX84 series belongs to ON Semiconductor's general-purpose Zener diode product line, designed specifically for cost-effective, high-yield voltage regulation and protection in consumer electronics, industrial controls, and portable equipment.

FAQ

What is the exact zener voltage range for BZX84C10_S00Z at 5 mA test current?

The BZX84C10_S00Z has a zener voltage range of 9.4 V to 10.6 V at I_Z = 5.0 mA, per the official ON Semiconductor datasheet Rev. 1.10. This ±5% tolerance band reflects production specification limits and is guaranteed across the full operating temperature range of –55°C to +150°C junction temperature. The BZX84C10_S00Z achieves this consistency using planar epitaxial process control and on-wafer sorting.

Does BZX84C10_S00Z support bidirectional ESD protection?

No - the BZX84C10_S00Z is a unidirectional Zener diode optimized for reverse-bias voltage regulation and clamping. While its forward voltage is ≤0.9 V at 10 mA, it lacks symmetric breakdown characteristics required for true bidirectional TVS functionality. For ESD protection, the BZX84C10_S00Z is used only in shunt configuration from signal line to ground, relying on external series impedance to limit current. Its design does not include back-to-back or dual-Zener structures.

What is the maximum allowable power dissipation for BZX84C10_S00Z at 70°C ambient temperature?

At T_A = 70°C, the BZX84C10_S00Z must be derated linearly from its 250 mW rating at 25°C using R_JA = 465°C/W. The allowable power is calculated as P_D(T_A) = 250 mW × (1 – (70 – 25)/465) ≈ 147 mW. Exceeding this reduces reliability and risks thermal runaway. The BZX84C10_S00Z datasheet confirms this derating curve applies to standard FR-4 PCB mounting (76.2 mm × 114.3 mm).

Is BZX84C10_S00Z pin-compatible with other SOT-23 Zener diodes like BZX84C12 or BZX84C5V6?

Yes - all BZX84C-series devices including BZX84C10_S00Z share identical SOT-23 (TO-236AB) mechanical outline, pin assignment (anode–cathode–NC), and solder pad layout. However, electrical parameters differ significantly: BZX84C12 specifies 11.4–12.9 V V_Z, while BZX84C5V6 specifies 5.2–6.3 V. Substituting BZX84C10_S00Z for another BZX84C variant requires verification of voltage, power, and impedance requirements in the target circuit.

What is the reverse leakage current specification for BZX84C10_S00Z at 7.0 V reverse bias?

The BZX84C10_S00Z exhibits a maximum reverse leakage current (I_R) of 0.2 µA at V_R = 7.0 V and T_A = 25°C, as specified in the ON Semiconductor datasheet. This low leakage ensures minimal loading on high-impedance nodes such as comparator inputs or sensor bias networks. The BZX84C10_S00Z maintains this performance across its full storage temperature range (–55°C to +150°C), with leakage increasing predictably per Arrhenius behavior at elevated temperatures.