Diodes Incorporated BZX84C11S-7

Overview

BZX84C11S-7 from Diodes Incorporated is a 11 V, 200 mW surface-mount Zener diode in SOT-363 package, specified at 5 mA test current with ±5% tolerance (10.4–11.6 V), 20 Ω dynamic impedance at 5 mA, and 0.1 µA maximum reverse leakage at 8 V. It provides precision voltage regulation in low-power analog reference and overvoltage protection circuits.

For engineers reviewing the BZX84C11S-7 datasheet, BZX84C11S-7 pinout, BZX84C11S-7 application, or BZX84C11S-7 equivalent, key selection criteria include zener voltage tolerance, thermal resistance (625 °C/W), reverse leakage at VR = 8 V, temperature coefficient (+5.4 to +9.0 mV/°C), and SOT-363 footprint compatibility with high-density PCB layouts.

Technical Context

This dual-diode SOT-363 package contains two independent Zener diodes sharing no internal connection - confirmed by device schematic showing isolated C1/A1/A2/C2 terminals with NC pins. Each diode operates as a two-terminal voltage reference with sharp reverse breakdown and minimal forward conduction (VF = 0.9 V @ 10 mA).

Thermal derating follows a linear curve from 200 mW at 25 °C ambient to zero at 150 °C, based on RθJA = 625 °C/W and FR4 board mounting per AP02001. Temperature coefficient is positive and voltage-dependent, ranging +5.4 to +9.0 mV/°C for the 11 V variant, enabling predictable drift compensation in stable reference designs.

Key Specifications

Pinout & Package

SOT-363 package with six terminals: two anodes (A1, A2), two cathodes (C1, C2), and two no-connect (NC) pins. Pin assignment verified from top-view schematic in DS30108 Rev. 17–2, Page 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Compared with BZX84C11S-7, MMBZ5240BS-7-F offers higher power headroom but sacrifices 1 V regulation accuracy, while BZX84C10S-7-F maintains identical form-factor and reliability with reduced voltage setpoint - making it ideal for drop-in validation where 10 V is acceptable.

Availability

BZX84C11S-7 is available at Aetrix Electronics and suitable for precision voltage reference, overvoltage protection, signal level shifting, and dual-rail bias generation requiring stable component supply across industrial sensor, automotive body electronics, and medical diagnostic equipment programs.

Supply support for BZX84C11S-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the US.

The BZX84C series belongs to Diodes' precision Zener diode product line, engineered for high-reliability voltage regulation in space-constrained, low-power applications including portable instrumentation and safety-critical subsystems.

FAQ

What is the maximum reverse voltage (VR) at which leakage current is guaranteed?

The BZX84C11S-7 guarantees IR ≤ 0.1 µA at VR = 8 V, per Electrical Characteristics table on page 2 of DS30108 Rev. 17–2. This value is measured under DC conditions at TA = 25 °C and defines the upper limit of off-state current before breakdown onset.

Can both Zener diodes in the SOT-363 package be used simultaneously in the same circuit?

Yes - C1/A1 and C2/A2 form two fully independent Zener diodes with no internal connection. They may be biased separately, e.g., one as a 11 V reference and the other as a 5.1 V clamp using external resistors, provided total package power remains ≤200 mW.

Is the SOT-363 package compatible with standard reflow profiles for lead-free soldering?

Yes - the device is rated for Moisture Sensitivity Level 1 per J-STD-020D and uses matte tin plating compatible with IPC/JEDEC J-STD-020 Class 3 reflow profiles, including peak temperatures up to 260 °C for ≤60 seconds.

How does the temperature coefficient affect long-term reference stability?

With TCVZ = +5.4 to +9.0 mV/°C, a 20 °C ambient shift causes 108–180 mV drift in VZ. For sub-0.1% stability, ambient variation must be limited to <6 °C or compensated via circuit topology (e.g., complementary diode pairs).