Diodes Incorporated BZX84C24T-7-F

Overview

BZX84C24T-7-F from Diodes Incorporated is a 24 V, 150 mW surface-mount Zener diode in SOT-523 package, with nominal zener voltage 24 V (min 22.8 V, max 25.6 V at 5 mA), zener impedance 70 Ω at test current, and reverse leakage ≤0.1 µA at 16.8 V, used for precision voltage regulation and reference in low-power analog circuits.

For engineers reviewing the BZX84C24T-7-F datasheet, BZX84C24T-7-F pinout, BZX84C24T-7-F application, or BZX84C24T-7-F equivalent, key selection criteria include zener voltage tolerance, dynamic impedance at 5 mA, power derating above 25°C, thermal resistance (833 °C/W), and RoHS-compliant lead-free plating on SOT-523 terminals.

Technical Context

This Zener diode operates in reverse breakdown mode to maintain stable voltage across its terminals under varying load or supply conditions. It uses planar die construction for consistent parametric performance and low temperature coefficient (18.4 to 22.0 mV/°C) over its operating range.

Designed for low-current regulation (<5 mA typical test condition), it delivers predictable clamping behavior with maximum zener impedance of 70 Ω at 5 mA and 250 Ω at knee current (1 mA), enabling use in biasing, voltage reference, and overvoltage protection circuits where space and thermal constraints are critical.

Key Specifications

Pinout & Package

Package: SOT-523 - ultra-small plastic surface-mount case (1.60 mm × 0.80 mm × 0.50 mm), UL 94V-0 rated, moisture sensitivity level 1, with matte tin-plated Alloy 42 leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Compared with BZX84C24T-7-F, MMBZ5249BS-7-F offers 33% higher power and lower thermal resistance in slightly larger SOT-323, while BZX84-C24LT1G trades miniaturization for 2× power rating and legacy SOT-23 compatibility-choice depends on board area budget and thermal load profile.

Availability

BZX84C24T-7-F is available at Aetrix Electronics and suitable for portable power management, industrial sensor signal conditioning, and automotive body control modules requiring stable component supply with full RoHS and green compound compliance.

Supply support for BZX84C24T-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving industrial, computing, consumer, and communications markets with high-reliability components.

The BZX84 series belongs to Diodes' precision Zener voltage reference product line, engineered for compact, low-power regulation in space-constrained applications where stable voltage referencing and low leakage are essential.

FAQ

What is the maximum reverse voltage this Zener can clamp without breakdown?

The BZX84C24T-7-F begins controlled reverse breakdown at 22.8 V (minimum specified zener voltage) and maintains regulation up to 25.6 V (maximum) at 5 mA test current. It is not rated for sustained operation above 25.6 V - exceeding this risks thermal runaway or parametric shift.

Can this device be used in series for higher voltage reference generation?

No - series connection of Zener diodes like BZX84C24T-7-F is not recommended due to mismatched temperature coefficients and dynamic impedances, which cause unequal voltage division and instability. Use a single higher-voltage Zener or dedicated reference IC instead.

Is the SOT-523 package compatible with standard reflow profiles?

Yes - the SOT-523 package supports JEDEC J-STD-020D Level 1 moisture sensitivity and is qualified for standard Pb-free reflow profiles (peak 260°C, 60 sec max), with no pre-bake required when stored per manufacturer humidity guidelines.

How does the 833 °C/W thermal resistance affect practical layout?

With R_θJA = 833 °C/W, dissipating just 100 mW raises junction temperature by 83°C above ambient - so even at 25°C ambient, T_J reaches 108°C. Layout must minimize copper isolation and use thermal vias to inner ground planes to avoid exceeding 150°C max T_J.