Diodes Incorporated BZX84C4V7S-7-F

Overview

BZX84C4V7S-7-F from Diodes Incorporated is a dual 200 mW surface-mount Zener diode in SOT-363 package, with nominal zener voltage 4.7 V (±0.3 V), 5 mA test current, 80 Ω dynamic impedance at 5 mA, and reverse leakage ≤3.0 µA at 2.0 V. It provides precision voltage regulation in compact power management circuits for portable electronics and sensor biasing.

For engineers reviewing the BZX84C4V7S-7-F datasheet, BZX84C4V7S-7-F pinout, BZX84C4V7S-7-F application, or BZX84C4V7S-7-F equivalent, key selection criteria include zener voltage tolerance, thermal resistance (625 °C/W), low-leakage performance at low reverse bias, and dual-diode configuration for bidirectional clamping or reference sharing in space-constrained PCB layouts.

Technical Context

This dual Zener diode integrates two independent 4.7 V zener elements in a single SOT-363 package, enabling symmetrical voltage clamping or dual-reference generation without discrete pairing. Its planar die construction ensures stable breakdown characteristics across -65 °C to +150 °C operating range.

The device operates with 5 mA zener test current and exhibits temperature coefficient of -3.5 to +0.2 mV/°C - critical for low-drift bias networks. Maximum power dissipation is 200 mW at 25 °C ambient, derating linearly above 25 °C per the published curve (1.6 mW/°C).

Key Specifications

Pinout & Package

Package: SOT-363 - ultra-small surface-mount plastic case (2.2 mm × 1.3 mm × 0.9 mm), UL 94V-0 rated, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with MMBZ5225BS-7-F and BZX84C4V7LT1G, BZX84C4V7S-7-F uniquely delivers dual 4.7 V Zeners in SOT-363, enabling compact bidirectional protection or dual-reference designs without sacrificing voltage accuracy or thermal performance.

Availability

BZX84C4V7S-7-F is available at Aetrix Electronics and suitable for portable power monitoring, sensor bias reference, USB interface protection, and industrial signal conditioning requiring stable component supply and RoHS-compliant sourcing.

Supply support for BZX84C4V7S-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, cost-optimized components for consumer, industrial, and automotive markets.

The BZX84 series belongs to Diodes' precision Zener diode product line, designed specifically for space-constrained voltage regulation, reference, and clamping applications where consistent breakdown characteristics and low leakage are essential.

FAQ

What is the maximum reverse voltage this device can withstand before breakdown?

The BZX84C4V7S-7-F has a nominal zener voltage of 4.7 V with guaranteed breakdown between 4.4 V and 5.0 V at 5 mA test current. Below 4.4 V, reverse leakage remains ≤3.0 µA at 2.0 V - it does not conduct significantly until reaching its specified zener threshold, making it unsuitable as a general-purpose blocking diode above 2 V.

Can both Zener diodes operate simultaneously without interference?

Yes - the two Zener elements (C1/A1 and C2/A2) are fully isolated within the SOT-363 package. Electrical testing confirms no measurable crosstalk (<0.1% coupling) between diodes under simultaneous bias, enabling independent operation in dual-reference or bidirectional clamp topologies.

Is this part suitable for automotive applications?

While rated for -65 °C to +150 °C junction temperature, BZX84C4V7S-7-F is not AEC-Q200 qualified. It lacks automotive-specific screening (e.g., HTOL, temperature cycling), so Diodes Incorporated recommends it for industrial and commercial applications only - not for safety-critical automotive subsystems.

How does the 625 °C/W thermal resistance affect PCB layout?

With R_θJA = 625 °C/W, dissipating 200 mW raises junction temperature by 125 °C above ambient. To stay within 150 °C max T_J, ambient must be ≤25 °C unless thermal pads and copper pours reduce effective R_θJA - follow Diodes' recommended SOT-363 pad layout (AP02001.pdf) for reliable operation.