Diodes Incorporated BZX84C4V7W-7-F

Overview

BZX84C4V7W-7-F from Diodes Incorporated is a 4.7 V, 200 mW surface-mount Zener diode in SOT-323 package, rated for 5 mA test current with 80 Ω dynamic impedance and ±0.2 mV/°C temperature coefficient, used for precision voltage reference and overvoltage protection in low-power analog circuits.

For engineers reviewing the BZX84C4V7W-7-F datasheet, BZX84C4V7W-7-F pinout, BZX84C4V7W-7-F application, or BZX84C4V7W-7-F equivalent, key selection criteria include nominal Zener voltage tolerance (±0.3 V), maximum reverse leakage (3.0 µA at 2.0 V), thermal resistance (625 K/W), and RoHS-compliant green molding compound construction.

Technical Context

This Zener diode operates in reverse breakdown mode with tightly controlled voltage regulation across 5 mA test current, leveraging planar die construction for stable parametric performance. Its ultra-small SOT-323 footprint supports high-density PCB layouts while maintaining thermal reliability up to +125°C junction temperature.

The device exhibits low dynamic impedance (80 Ω at 5 mA) and minimal voltage drift (–3.5 to +0.2 mV/°C), enabling stable reference generation in battery-powered sensors and voltage-clamp circuits where ambient temperature varies between –65°C and +125°C.

Key Specifications

Pinout & Package

SOT-323 package with three terminals: anode (pin 1), cathode (pin 2), and no internal connection (pin 3). Cathode marked by band on top surface; polarity confirmed per Diodes Inc. schematic and mechanical drawing DS30066 Rev. 15-2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with MMBZ4685-7-F and BZX84-C4V7LT1G, BZX84C4V7W-7-F offers optimal balance of space-constrained layout, low leakage, and industry-standard marking-making it preferred for new designs targeting compact, battery-operated systems requiring strict power budget control.

Availability

BZX84C4V7W-7-F is available at Aetrix Electronics and suitable for portable battery monitoring, low-power sensor reference, and microcontroller I/O clamp applications requiring stable component supply and full RoHS compliance.

Supply support for BZX84C4V7W-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

This device belongs to the BZX84C series of surface-mount Zener diodes engineered specifically for space-constrained, low-power voltage regulation and protection in consumer, computing, and industrial electronics.

FAQ

What is the maximum reverse voltage (V_R) at which leakage remains ≤3.0 µA?

The datasheet specifies 3.0 µA maximum reverse current at V_R = 2.0 V. At 4.7 V, the device enters Zener breakdown and conducts significantly higher current - therefore, 2.0 V is the highest voltage at which leakage stays within that limit. Exceeding this voltage initiates regulation behavior rather than passive blocking.

Can BZX84C4V7W-7-F be used in forward-bias applications like standard diodes?

Yes - its forward voltage is 0.9 V at 10 mA, matching typical silicon diode behavior. However, it is not optimized for rectification: its 200 mW power rating and SOT-323 thermal mass limit continuous forward current to ~220 mA. Use only in low-duty-cycle or signal-level forward applications, not power conversion.

Is the SOT-323 package compatible with standard reflow profiles for lead-free solder?

Yes - the device meets J-STD-020D Level 1 moisture sensitivity and is qualified for peak reflow temperatures up to 260°C. Its matte tin finish and green molding compound are fully compatible with IPC-J-STD-020-compliant Pb-free reflow profiles, including ramp-soak-reflow cycles with 60–90 second exposure above 217°C.

How does the temperature coefficient affect regulation accuracy over –40°C to +85°C?

With α_VZ ranging from –3.5 to +0.2 mV/°C, worst-case drift over 125°C ΔT is ±0.44 V. For a 4.7 V nominal part, this yields ±9.4% full-scale shift - but actual drift is typically centered near –1.5 mV/°C, resulting in ~–0.19 V shift over that range, or ~–4.0% error, which remains acceptable for non-precision reference use cases.