Diodes Incorporated BZX84C5V1-7-F

Overview

BZX84C5V1-7-F from Diodes Incorporated is a 5.1V, 350mW surface-mount Zener diode in SOT23 package, designed for precision voltage regulation and overvoltage protection in low-power circuits. It delivers ±5% tolerance (4.8–5.4V), 60Ω dynamic impedance at 5mA test current, and −2.7mV/°C temperature coefficient, enabling stable reference operation in power supply feedback loops and sensor biasing networks.

For engineers reviewing the BZX84C5V1-7-F datasheet, BZX84C5V1-7-F pinout, BZX84C5V1-7-F application, or BZX84C5V1-7-F equivalent, key selection criteria include Zener voltage accuracy, thermal stability under ambient variations, low leakage (<2µA at 2V), and compatibility with automated SMT assembly on FR-4 PCBs.

Technical Context

This Zener diode operates in reverse breakdown mode to maintain a stable reference voltage across its terminals. Its planar die construction ensures consistent breakdown characteristics, while the SOT23 package supports high thermal resistance management (357°C/W junction-to-ambient) under rated 350mW dissipation.

The device exhibits a nominal −2.7mV/°C temperature coefficient near 5.1V, minimizing drift over −65°C to +150°C operating range. Reverse leakage remains ≤2µA at VR = 2V, and forward voltage is 0.9V at IF = 10mA - critical for bidirectional clamping or dual-purpose biasing designs.

Key Specifications

Pinout & Package

Package: SOT23 - surface-mount plastic case with matte tin-plated Alloy 42 leadframe; UL 94V-0 rated; moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with MMBZ5221BS-7-F and BZX84-C5V1,115, the BZX84C5V1-7-F offers superior power margin (350mW vs 225mW) and broader AEC-Q101 qualification scope, making it preferred for automotive and industrial applications requiring sustained thermal resilience.

Availability

BZX84C5V1-7-F is available at Aetrix Electronics and suitable for power supply feedback, sensor bias reference, overvoltage clamp, and microcontroller I/O protection requiring stable component supply and long-term manufacturability.

Supply support for BZX84C5V1-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in California and operating design centers and manufacturing facilities worldwide.

The BZX84 series belongs to Diodes' precision Zener reference portfolio, engineered specifically for cost-sensitive, high-volume applications demanding tight voltage tolerance, low leakage, and robust SMT manufacturability.

FAQ

What is the maximum power dissipation for BZX84C5V1-7-F at 70°C ambient?

At 70°C ambient, the device's power dissipation must be derated linearly from 350mW at 25°C using the 357°C/W thermal resistance. The allowable power is 350mW × (1 − (70 − 25)/357) ≈ 288mW. This value assumes standard FR-4 PCB mounting with recommended pad layout per Diodes' package outline documentation.

Is BZX84C5V1-7-F suitable for bidirectional ESD protection?

No - it is a unidirectional Zener diode optimized for reverse-bias regulation. For bidirectional ESD protection, a dedicated TVS diode such as D1213A-05-7 is required. However, paired BZX84C5V1-7-F units (anode-to-anode) can form a crude symmetrical clamp, though with higher leakage and less predictable triggering than purpose-built devices.

Does the '-7-F' suffix indicate automotive qualification?

No - the '-7-F' denotes standard-grade SOT23 packaging in 3,000-piece tape-and-reel format. Automotive qualification requires the 'Q-7-F' suffix (e.g., BZX84C5V1Q-7-F), which undergoes additional AEC-Q101 stress testing and lot-level PPAP documentation.

How does the −2.7mV/°C temperature coefficient affect circuit performance?

The negative coefficient means VZ decreases by 2.7mV per °C rise in junction temperature. In a 5.1V reference, this yields ~0.053%/°C drift. For applications requiring <0.1% total drift over 50°C, compensation techniques (e.g., complementary TC components) or tighter ambient control may be necessary.