Diodes Incorporated BZX84C5V1TS-7-F

Overview

BZX84C5V1TS-7-F from Diodes Incorporated is a triple-element, ultra-small surface-mount Zener diode array with isolated 5.1 V ±5% nominal zener voltage (4.8–5.4 V), 200 mW power dissipation, and 60 Ω maximum zener impedance at 5 mA test current - used for precision voltage regulation and overvoltage protection in compact DC power rails and signal conditioning circuits.

For engineers reviewing the BZX84C5V1TS-7-F datasheet, BZX84C5V1TS-7-F pinout, BZX84C5V1TS-7-F application, or BZX84C5V1TS-7-F equivalent, key selection criteria include zener voltage tolerance, low dynamic impedance, thermal derating behavior, SOT-363 package footprint compatibility, and reverse leakage performance at 2 V.

Technical Context

This device integrates three electrically isolated Zener diodes in a single SOT-363 package, each rated for 5.1 V breakdown at I_ZT = 5 mA. It operates across –65 °C to +150 °C and exhibits a temperature coefficient of –2.7 to +1.2 mV/°C, enabling stable reference performance in thermally varying environments.

The diodes support low-current regulation (I_ZK = 1.0 mA) with ≤2.0 µA reverse leakage at 2.0 V, and maintain <480 Ω dynamic impedance (Z_ZK) under knee current conditions - critical for noise-sensitive analog monitoring and clamping functions.

Key Specifications

Pinout & Package

SOT-363 (SC-70-6) ultra-small plastic surface-mount package with six terminals: three anodes and three cathodes arranged as three independent diodes. Lead-free matte tin plating over Alloy 42 leadframe; moisture sensitivity level 1 per J-STD-020D.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode array applications.

Compared with MMBZ5221BS-7-F and BZX84C5V1LT1G, BZX84C5V1TS-7-F uniquely delivers three isolated 5.1 V Zeners in one SOT-363 footprint - reducing component count, layout complexity, and interconnect inductance for multi-channel protection.

Availability

BZX84C5V1TS-7-F is available at Aetrix Electronics and suitable for industrial sensor interfaces, USB port protection circuits, automotive body control modules, and IoT node power regulation requiring stable component supply and long-term manufacturability.

Supply support for BZX84C5V1TS-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for industrial, automotive, and consumer markets.

The BZX84C series belongs to Diodes' precision Zener diode portfolio, designed specifically for compact, multi-channel voltage regulation and transient suppression in space-constrained PCB layouts.

FAQ

What is the maximum reverse voltage this device can withstand before breakdown?

The BZX84C5V1TS-7-F has a nominal zener voltage of 5.1 V with a guaranteed breakdown range of 4.8 V to 5.4 V at 5 mA test current. It is not rated for sustained reverse blocking above its zener voltage - operation above 5.4 V will initiate controlled conduction, not catastrophic failure, provided power dissipation remains within 200 mW limits.

Can this part replace a single SOT-23 Zener diode in existing designs?

Yes, but only if the design requires only one 5.1 V Zener and the SOT-363 footprint is accommodated. The device contains three independent diodes; using just one requires proper termination of unused anodes/cathodes. Pin mapping differs from SOT-23, so direct drop-in replacement is not possible without layout revision.

Is this device suitable for ESD protection per IEC 61000-4-2?

While not a dedicated TVS diode, the BZX84C5V1TS-7-F provides effective low-energy clamping due to its sharp 5.1 V breakdown and 60 Ω dynamic impedance. It meets basic ESD suppression needs for non-critical signal lines (e.g., GPIO, I²C) up to ±8 kV contact discharge when combined with series impedance, but lacks the specified clamping voltage and peak pulse power of certified TVS devices.

How does thermal derating affect usable power at elevated ambient temperatures?

Per the datasheet's power derating curve, usable power drops linearly from 200 mW at 25 °C to zero at 150 °C. At 85 °C ambient, maximum dissipation is reduced to approximately 120 mW. This must be accounted for in continuous-clamp applications - e.g., at 85 °C, the device supports ≤23.5 mA average current at 5.1 V without exceeding thermal limits.