Diodes Incorporated BZX84C9V1S-7

Overview

BZX84C9V1S-7 from Diodes Incorporated is a surface-mount 9.1 V Zener diode in SOT-363 package, rated for 200 mW power dissipation, with nominal zener voltage 9.1 V (min 8.5 V, max 9.6 V at 5 mA), zener impedance 15 Ω at 5 mA, and reverse current ≤0.5 µA at 6 V, used for precision voltage regulation and reference in low-power analog circuits.

For engineers reviewing the BZX84C9V1S-7 datasheet, BZX84C9V1S-7 pinout, BZX84C9V1S-7 application, or BZX84C9V1S-7 equivalent, key selection criteria include zener voltage tolerance, dynamic impedance at test current, thermal resistance (625 °C/W), and SOT-363 footprint compatibility in space-constrained PCB layouts.

Technical Context

This dual-diode SOT-363 package contains two independent Zener diodes sharing no internal connection - each functions as a standalone voltage reference or clamp. The device operates within -65 °C to +150 °C ambient range and exhibits a positive temperature coefficient of +3.8 to +7.0 mV/°C at 5 mA, enabling predictable drift compensation in stable reference designs.

Its 200 mW power rating is derated linearly above 25 °C per the published curve, and maximum reverse current remains ≤0.5 µA up to 6 V, ensuring low leakage in high-impedance bias networks. Zener impedance is specified at 1 kHz, supporting stable regulation under moderate AC ripple conditions.

Key Specifications

Pinout & Package

Package: SOT-363 (SC-70-6), ultra-small plastic surface-mount case with six terminals; moisture sensitivity level 1 per J-STD-020D; lead-free matte tin plating over Alloy 42 leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with MMSZ4687T1G and BZX84-C9V1,115, the BZX84C9V1S-7 uniquely delivers dual 9.1 V Zeners in SOT-363, enabling compact dual-reference or bidirectional clamp designs impossible with single-diode alternatives - critical for miniaturized mixed-signal systems.

Availability

BZX84C9V1S-7 is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, USB-C power delivery reference design, and automotive cabin control panel development requiring stable component supply and consistent parametric performance across production batches.

Supply support for BZX84C9V1S-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The BZX84 series belongs to Diodes' precision Zener diode product line, engineered for stable voltage reference and low-leakage clamping in space-constrained, low-power applications across industrial, computing, and consumer electronics.

FAQ

What is the maximum reverse voltage before breakdown for BZX84C9V1S-7?

The nominal zener voltage is 9.1 V with a guaranteed range of 8.5 V to 9.6 V at 5 mA test current. Breakdown occurs within this band; operation below 8.5 V yields negligible conduction (<0.5 µA at 6 V), and sustained reverse bias above 9.6 V risks exceeding power rating unless current is strictly limited.

Can both diodes in the SOT-363 package be used simultaneously in the same circuit?

Yes - C1/A1 and C2/A2 form two fully independent Zener diodes with no internal connection. They can be biased separately for dual-reference generation, complementary clamping, or redundancy; layout must maintain isolation between their respective traces and pads.

Is BZX84C9V1S-7 suitable for high-frequency noise suppression?

No - its typical total capacitance is ~2.5 pF at 1 V reverse bias (per Fig. 4), making it unsuitable for RF filtering. It is optimized for DC/low-frequency regulation and transient clamping up to ~1 MHz, where impedance and leakage dominate performance.

How does temperature affect the 9.1 V regulation point?

At 5 mA test current, the temperature coefficient ranges from +3.8 to +7.0 mV/°C. A 50 °C rise from 25 °C increases V_Z by 190–350 mV - measurable drift that must be accounted for in precision references, though predictable for compensation schemes.