Taiwan Semiconductor Corporation BZX85C9V1

Overview

BZX85C9V1 from Taiwan Semiconductor is a 1.3W, ±5% tolerance Zener diode with nominal breakdown voltage of 9.1V, tested at 5mA, dynamic impedance of 200Ω at 5mA, and maximum leakage current of 1µA at 6.9V reverse bias; used for low-voltage stabilization in DC/DC converters and adapter circuits.

For engineers reviewing the BZX85C9V1 datasheet, BZX85C9V1 pinout, BZX85C9V1 application, or BZX85C9V1 equivalent, key selection criteria include Zener voltage tolerance (±5%), power dissipation (1.3W), thermal resistance (130°C/W), junction temperature range (–65°C to +200°C), and DO-41 package compatibility with wave/soldering processes per J-STD-002.

Technical Context

The BZX85C9V1 operates as a single-die, hermetically sealed glass Zener diode optimized for stable voltage reference and regulation in linear power stages. Its 9.1V nominal Zener voltage is specified under 10ms pulse test conditions, with 200Ω dynamic impedance measured at 5mA test current and 500Ω maximum at knee current (0.5mA).

Designed for ambient-temperature operation (25°C unless noted), it supports continuous reverse-bias operation up to 1.3W dissipation, with thermal performance governed by a junction-to-ambient resistance of 130°C/W and storage/junction temperature limits spanning –65°C to +200°C.

Key Specifications

Pinout & Package

Package: DO-41 - axial-leaded, hermetically sealed glass case with pure tin-plated leads solderable per J-STD-002; cathode indicated by band; weight ≈242 mg.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N4739A and MMBZ5238B, the BZX85C9V1 delivers higher power handling (1.3W) and lower dynamic impedance (200Ω) in a standardized through-hole DO-41 package, making it optimal for industrial adapters and DC/DC converters requiring robust thermal performance and legacy assembly compatibility.

Availability

BZX85C9V1 is available at Aetrix Electronics and suitable for adapter power supplies, on-board DC/DC converters, and LED lighting drivers requiring stable component supply with full traceability and long-lifecycle support.

Supply support for BZX85C9V1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete power devices, analog ICs, and protection components for industrial and consumer markets.

The BZX85C series was developed to deliver cost-effective, high-reliability Zener diodes with tight voltage tolerance and robust thermal performance for voltage reference and stabilization in mainstream power conversion systems.

FAQ

What is the Zener voltage tolerance of the BZX85C9V1?

The BZX85C9V1 has a nominal Zener voltage of 9.1 V with a standard tolerance of ±5%, meaning its actual breakdown voltage falls between 8.5 V and 9.6 V at 5 mA test current. This tolerance is confirmed in the Electrical Specifications table and applies across the full operating temperature range. The BZX85C9V1 is tested under 10 ms pulse conditions to ensure consistency in production screening.

What is the maximum power dissipation for the BZX85C9V1?

The BZX85C9V1 is rated for 1.3 W maximum power dissipation at 25°C ambient temperature. Its junction-to-ambient thermal resistance is 130°C/W, so derating is required above 25°C - for example, at 75°C ambient, usable power drops to approximately 0.9 W. This rating is validated under the Absolute Maximum Ratings section and reflects continuous DC operation in the DO-41 package.

Does the BZX85C9V1 meet RoHS requirements?

Yes, the BZX85C9V1 is RoHS compliant, as explicitly stated in the FEATURES section of the official Taiwan Semiconductor documentation. It contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE), and uses green compound encapsulation per the marking diagram. Compliance is verified per EU Directive 2011/65/EU.

What is the reverse leakage current specification for the BZX85C9V1?

The BZX85C9V1 exhibits a maximum reverse leakage current of 1 µA at a reverse voltage of 6.9 V, as specified in the Electrical Specifications table. This value is measured at 25°C and defines the upper bound of unwanted current draw in standby or low-power reference circuits. Lower leakage improves efficiency in battery-powered or always-on applications.

What package type does the BZX85C9V1 use?

The BZX85C9V1 uses the DO-41 package - an axial-leaded, hermetically sealed glass case with pure tin-plated leads compliant with J-STD-002 solderability standards. Dimensions are fully documented in the PACKAGE OUTLINE DIMENSIONS drawing, including lead diameter (0.86 mm), body diameter (2.80 mm), and overall length (5.20 mm). Polarity is marked by a visible cathode band.