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Nexperia USA Inc. BZX8850-B3V3YL
- Part No.:
- BZX8850-B3V3YL
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Zener Diodes
- Package:
- SOD-882
- Datasheet:
-
BZX8850-B3V3YL.pdf
- Description:
- DIODE ZENER 3.3V 250MW DFN1006-2
- Quantity:
- Payment:
- Shipping:
Inventory:9,428
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Product details
Overview
BZX8850-B3V3YL from Nexperia is a low-current Zener diode in SOD882 (DFN1006-2) package, designed for precision voltage regulation at 3.3 V nominal with ±2 % tolerance. It delivers stable reference voltage at 50 μA test current, exhibits 160 Ω differential resistance at 5 mA, and supports operation from −55 °C to +150 °C ambient. Used in portable battery-powered circuits requiring minimal bias current and low leakage.
For engineers reviewing the BZX8850-B3V3YL datasheet, BZX8850-B3V3YL pinout, BZX8850-B3V3YL application, or BZX8850-B3V3YL equivalent, this page provides verified electrical characteristics, thermal behavior, package dimensions, marking interpretation, and direct substitution guidance for low-power voltage reference design.
Technical Context
This Zener diode operates in reverse breakdown mode with a nominal Zener voltage of 3.3 V at IZ = 50 μA, maintaining regulation across 0.8–1.5 μA reverse current range. Its temperature coefficient is −3.5 mV/K, ensuring predictable drift over temperature.
The device features ultra-low capacitance (160 pF at 0 V, f = 1 MHz) and low forward voltage (≤0.9 V at 10 mA), enabling use in high-frequency noise-sensitive signal conditioning and low-dropout bias networks where parasitic coupling must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 3.23 V to 3.37 V at IZ = 50 μA - tight ±2 % tolerance enables accurate low-current reference without trimming. |
| Differential Resistance (rdiff) | 600 Ω max at IZ = 50 μA - ensures stable regulation under microamp-level load variations. |
| Reverse Current (IR) | ≤0.8 μA at VR = 1.0 V - ultra-low leakage preserves battery life in always-on sensor nodes. |
| Power Dissipation (Ptot) | 250 mW at Tamb ≤ 25 °C on FR4 PCB - sufficient headroom for transient surges in compact layouts. |
| Thermal Resistance (Rth(j-a)) | 500 K/W - defines junction-to-ambient rise per watt; critical for derating in sealed enclosures. |
| Capacitance (Cd) | 160 pF at VR = 0 V, f = 1 MHz - minimizes signal coupling in RF-adjacent bias rails. |
| Forward Voltage (VF) | ≤0.9 V at IF = 10 mA - allows use as low-VF clamp or protection diode in dual-role circuits. |
Pinout & Package
Package: SOD882 (DFN1006-2), leadless ultra-small surface-mount plastic package; body dimensions 1.0 × 0.6 × 0.5 mm; cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (K) | Connected to regulated output node; polarity indicator for correct orientation during placement. |
| 2 | Anode (A) | Connected to ground or lower-potential rail; forms reverse-biased junction for Zener action. |
Key Features
| Feature | Design Value |
|---|---|
| Low test current operation | Specified at 50 μA - enables regulation in nanoamp-to-microamp bias chains without loading source. |
| Tight voltage tolerance | ±2 % (B-series) - eliminates need for external trimming in precision analog sensor interfaces. |
| Ultra-small footprint | SOD882 (1.0 × 0.6 mm) - saves board space in wearables, hearing aids, and IoT edge nodes. |
| Optimized leakage profile | Intentional minor IR rise per AN90031 - improves switching speed and reduces broadband noise in feedback paths. |
| High-temperature capability | Rated to +150 °C junction - supports under-hood or industrial control applications with minimal derating. |
Applications
| Portable Sensor Biasing | Low-Power Microcontroller Reset |
|---|---|
|
Use Scenario: Providing stable 3.3 V reference to MEMS accelerometers and temperature sensors in battery-operated asset trackers. IC Role / Device Role / Timing Role: Zener voltage regulator supplying clean bias to analog front-end circuitry. Use Value: 0.8 μA max leakage at 1.0 V reverse bias extends 10-year coin-cell lifetime by minimizing quiescent drain. |
Use Scenario: Generating reset threshold for ultra-low-power MCUs (e.g., ARM Cortex-M0+) in sleep-mode wake-up circuits. IC Role / Device Role / Timing Role: Precision voltage reference defining brown-out detection level. Use Value: ±2 % VZ tolerance ensures deterministic reset assertion across temperature without calibration. |
| RF Front-End Bias Network | USB-C Power Negotiation Reference |
|
Use Scenario: Stabilizing gate bias for GaN FETs in sub-1 W wireless transmitters operating up to 2.4 GHz. IC Role / Device Role / Timing Role: Low-capacitance (160 pF) Zener clamp in DC bias tee configuration. Use Value: Minimal RF signal coupling due to low Cd, preserving impedance matching and EVM performance. |
Use Scenario: Supplying accurate 3.3 V reference to USB PD controller ICs for VBUS monitoring and CC line voltage sensing. IC Role / Device Role / Timing Role: Primary voltage reference for analog-to-digital conversion of power bus signals. Use Value: −3.5 mV/K temperature coefficient aligns with PD controller internal reference drift, reducing system-level offset error. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX884-B3V3 | Same VZ (3.3 V), but ±5 % tolerance and higher rdiff (1000 Ω max at 5 mA); SOD323 package (1.7 × 1.3 mm). | Larger footprint and looser regulation limit use in high-accuracy sensor biasing. | Select when cost sensitivity outweighs precision and board space constraints. |
| MMSZ4685T1G | 3.3 V nominal, ±5 %, 350 mW Ptot, SOD-123 package; rdiff = 150 Ω at 20 mA. | Higher power rating suits higher-current references but increases leakage (5 μA at 1 V). | Choose only if >1 mA regulation current is required and 5× leakage is acceptable. |
Compared with BZX8850-B3V3YL, BZX884-B3V3 trades accuracy and size for cost, while MMSZ4685T1G offers higher power handling at the expense of leakage and footprint-making BZX8850-B3V3YL optimal for space-constrained, battery-limited, precision-bias applications.
Availability
BZX8850-B3V3YL is available at Aetrix Electronics and suitable for portable sensor biasing, low-power microcontroller reset, RF front-end bias networks, and USB-C power negotiation reference requiring stable component supply across high-volume production and prototyping cycles.
Supply support for BZX8850-B3V3YL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices optimized for efficiency-critical applications in automotive, industrial, and consumer electronics.
The BZX8850 series belongs to Nexperia's low-current Zener portfolio, engineered specifically for ultra-low-power voltage reference and regulation in battery-powered and space-constrained systems.
FAQ
What is the maximum reverse voltage before breakdown for BZX8850-B3V3YL?
The BZX8850-B3V3YL is specified to maintain regulation at its nominal Zener voltage of 3.3 V (min 3.23 V, max 3.37 V) when reverse biased at IZ = 50 μA. Breakdown begins within this range; it is not rated for stable operation above 3.37 V under standard test conditions. Exceeding the absolute maximum reverse voltage of 3.67 V risks irreversible degradation.
Can BZX8850-B3V3YL be used in series for higher voltage reference generation?
No-BZX8850-B3V3YL is not characterized or guaranteed for series connection. Its tight ±2 % tolerance and low test current (50 μA) mean mismatched unit-to-unit variation would cause uneven voltage division and thermal runaway risk. Dedicated multi-Zener arrays or precision voltage references are recommended instead.
Is the SOD882 package compatible with standard reflow profiles for FR4 PCBs?
Yes-the DFN1006-2 (SOD882) package is qualified for standard lead-free reflow per J-STD-020. The recommended solder land pattern (0.6 mm pad length, 0.3 mm width, 0.7 mm spacing) and thermal resistance (500 K/W on single-sided FR4) ensure reliable attachment without voiding or tombstoning when using IPC-A-610 Class 2 process controls.
How does the −3.5 mV/K temperature coefficient affect long-term stability in outdoor deployments?
A −3.5 mV/K coefficient means VZ decreases by ~3.5 mV per °C rise. Over a −40 °C to +85 °C ambient range, total drift is ~438 mV-approximately ±6.6 % of nominal 3.3 V. For applications requiring <1 % drift, external compensation or tighter-tolerance alternatives (e.g., bandgap references) are necessary.
BZX8850-B3V3YL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- BZX8850
- Package/Case:
- SOD-882
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 3.3 V
- Tolerance:
- ±2%
- Power - Max:
- 250 mW
- Impedance (Max) (Zzt):
- 100 Ohms
- Current - Reverse Leakage @ Vr:
- 7.5 µA @ 1.5 V
- Voltage - Forward (Vf) (Max) @ If:
- 900 mV @ 10 mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1006-2
BZX8850-B3V3YL FAQ
1.How can I place an order for BZX8850-B3V3YL through Aetrix?
Please submit a Request for Quotation (RFQ) for BZX8850-B3V3YL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BZX8850-B3V3YL reliable?
The price and inventory of BZX8850-B3V3YL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZX8850-B3V3YL is usually 5 days.
3.What payment methods are accepted for BZX8850-B3V3YL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZX8850-B3V3YL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BZX8850-B3V3YL?
BZX8850-B3V3YL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BZX8850-B3V3YL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BZX8850-B3V3YL?
For technical support, including BZX8850-B3V3YL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZX8850-B3V3YL requirements.
6.How does Aetrix verify that BZX8850-B3V3YL is sourced from the original manufacturer or authorized distributors?
All BZX8850-B3V3YL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZX8850-B3V3YL meets industry standards.
7.What is the process for return or replacement of BZX8850-B3V3YL?
All BZX8850-B3V3YL units undergo pre-shipment inspection (PSI). If there is an issue with BZX8850-B3V3YL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BZX8850-B3V3YL part is unused and in its original packaging.
Return procedure for BZX8850-B3V3YL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BZX8850-B3V3YL Tags
-
MMBZ5240B-7-F
Diodes Incorporated
-
BZT52C5V6T-7
Diodes Incorporated
-
MMSZ5231B-7-F
Diodes Incorporated
-
BZT52C15-7-F
Diodes Incorporated
-
BZX84C3V3LT1G
onsemi
-
MMSZ5245BS-7-F
Diodes Incorporated
-
MMSZ4682T1G
onsemi
-
BZT52C15S-7-F
Diodes Incorporated
-
MM5Z5V1ST1G
onsemi
-
SMAJ4744A-TP
Micro Commercial Co
-
BZT52C3V6LP-7
Diodes Incorporated
-
SMAZ12-13-F
Diodes Incorporated
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