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NXP Semiconductors CBTU4411EE,557

Part No.:
CBTU4411EE,557
Manufacturer:
NXP Semiconductors
Category:
Signal Switches, Multiplexers, Decoders
Package:
72-LFBGA
Datasheet:
AetrixCBTU4411EE,557.pdf
Description:
IC BUS SWITCH 11 X 4:1 72LFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,716

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Product details

Overview

CBTU4411EE,557 from NXP Semiconductors is an 11-bit DDR2 SDRAM multiplexer/bus switch optimized for 1.7 V to 1.9 V operation with SSTL_18 select inputs. It provides 1:4 channel selection across 11 host-to-DIMM data paths, features 12 Ω nominal ON-resistance, <30 ps output skew, and supports differential strobe configuration on channel 10 for DDR2 memory subsystems in 1- or 2-rank DIMM designs.

For engineers reviewing the CBTU4411EE,557 datasheet, CBTU4411EE,557 pinout, CBTU4411EE,557 application, or CBTU4411EE,557 equivalent, this device is critical for high-speed DDR2 data bus routing where low propagation delay (≤100 ps), controlled enable/disable timing (≤1.75 ns), and precise signal integrity (matched rise/fall slew, low crosstalk) are required in memory interface design.

Technical Context

The CBTU4411EE,557 implements a pseudo-differential SSTL_18 decoder using S0/S1/VREF to drive 11 independent 1:4 analog switches, each with 12 Ω ON-resistance and internal 400 Ω pull-down on DIMM ports when disabled. Its control logic enables single-pin global disable (EN HIGH) and supports strobe-mode configuration via STREN for channel 10's 3⁄4×VDD pull-up.

Each switch path operates bidirectionally between HPn and one of four xDPn ports per channel, with termination selectable on S0/S1 inputs (TERM HIGH), VBIAS-controlled pull-down biasing, and latch-up protection exceeding 500 mA per JESD78 - all specified for 0 °C to +85 °C ambient operation.

Key Specifications

Parameter Value and Actual Design Meaning
Supply Voltage (VDD)1.7 V to 1.9 V - defines strict DDR2 SSTL_18-compatible power domain; operation outside this range invalidates timing and switching behavior.
ON-Resistance (RON)10 Ω to 17 Ω (typ. 12 Ω) - eliminates need for external series termination resistors on DDR2 data lines, preserving signal integrity.
Propagation Delay (tPD)50 ps to 100 ps - ensures minimal latency in high-frequency DDR2 data paths up to 400 MHz (800 Mbit/s).
Output Skew (tsk(o))≤30 ps - guarantees tight timing alignment across all 11 channels, essential for parallel DDR2 bus timing margins.
Input Termination (RT)55 Ω to 105 Ω (Thevenin) - provides on-chip selectable SSTL_18 input matching when TERM = HIGH, reducing external component count.
Pull-down Resistance (Rpd)280 Ω to 520 Ω - actively terminates unselected DIMM ports to VBIAS, preventing floating nodes and reflections.
Strobe Pull-up (RPU)430 Ω to 810 Ω - enables configurable 3⁄4×VDD bias on channel 10 for DDR2 differential strobe idle-state compliance.

Pinout & Package

LFBGA72 package (SOT856-1): plastic low-profile fine-pitch ball grid array, 7 × 7 × 1.05 mm body, 72 solder balls.

Pin/Terminal Circuit Role Design Meaning
HP0–HP10Host port I/OBidirectional data interface to memory controller; connects to one selected DIMM port per channel under S0/S1/EN control.
0DP0–3DP10DIMM port I/O (4 per channel)11 × 4 = 44 dedicated DIMM-side terminals; only one per channel active at a time; internally pulled down to VBIAS when deselected.
EN (C2)Global enable (active LOW)Drives all switches to high-impedance simultaneously; disables all host–DIMM paths and powers down S0/S1 receivers.
S0 (B2), S1 (A1)Pseudo-differential select inputsSSTL_18-compliant; require VREF = 0.5×VDD; termination enabled by TERM pin; pulled LOW when EN = HIGH.
VREF (C1)Select input referenceSupplies precise 0.5×VDD reference for S0/S1 threshold setting; critical for accurate switching time control independent of slew rate.
VBIAS (D1)Pull-down bias voltageSets DC level for internal 400 Ω pull-down resistors on DIMM ports; must be ≤0.33×VDD for normal operation.
STREN (A2)Strobe mode enableWhen HIGH, configures channel 10 (HP10/0DP10–3DP10) for differential strobe with internal 3⁄4×VDD pull-up during idle.
TERM (B1)S0/S1 termination controlActivates internal Thevenin termination (55–105 Ω) on S0/S1 when HIGH; disables termination (high-Z) when LOW.

Key Features

Feature Design Value
12 Ω ON-resistanceMatches DDR2 transmission line impedance to eliminate external series resistors and reduce BOM count in memory routing.
<30 ps output skewMaintains tight timing alignment across all 11 data channels, enabling reliable 400 MHz DDR2 operation without per-channel deskew.
Configurable strobe channel (CH10)Supports true/complementary strobe signaling with programmable 3⁄4×VDD pull-up, meeting DDR2 DQS idle-state requirements.
Selectable S0/S1 terminationOn-chip 55–105 Ω Thevenin termination reduces layout complexity and improves signal fidelity on high-speed select buses.
Internal 400 Ω DIMM-port pull-downPrevents floating DIMM lines during switch disable, eliminating need for external bias networks and improving noise immunity.

Applications

DDR2 Memory Controller Interface 1-Rank / 2-Rank DIMM Selection

Use Scenario: Routing data/address/control signals between a DDR2 memory controller and multiple DIMM slots on a server motherboard.

IC Role / Device Role / Timing Role: Acts as a low-skew, bidirectional 1:4 multiplexer for DQ, DQS, DM, and address bits - enabling dynamic rank selection without signal degradation.

Use Value: Enables single-controller support of up to 4 DIMM ranks via time-multiplexed access while maintaining <30 ps inter-channel skew and 100 ps max propagation delay.

Use Scenario: Selecting between two physically distinct DDR2 DIMM modules (e.g., primary and backup) in industrial embedded systems.

IC Role / Device Role / Timing Role: Provides hardware-selectable 1:2 path isolation between controller and either DIMM, with EN-driven fail-safe disable.

Use Value: Delivers deterministic rank switching with sub-2 ns enable/disable times and no external termination components required.

Differential Strobe Distribution DDR2 Data Bus Signal Conditioning

Use Scenario: Implementing compliant DQS strobe signaling in DDR2 systems requiring true/complementary strobe pairs with defined idle-state voltage.

IC Role / Device Role / Timing Role: Configures channel 10 as strobe path with internal 3⁄4×VDD pull-up (STREN = HIGH), supporting DDR2 DQS idle specification.

Use Value: Eliminates need for external pull-up resistors or level-shifters on strobe lines, reducing board area and improving signal consistency.

Use Scenario: Conditioning high-speed DDR2 data bus traces subject to reflection and crosstalk in dense PCB layouts.

IC Role / Device Role / Timing Role: Functions as a low-capacitance (4–6 pF), low-RC bus switch that preserves edge rates and minimizes data-data/data-DQM crosstalk.

Use Value: Achieves <30 ps edge skew and low crosstalk performance without adding series resistance or degrading signal rise/fall symmetry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 bus switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
NCP4411MNR2G11-bit DDR2 switch with 15 Ω RON, 0 °C to +70 °C temp range, no strobe-mode support, different LFBGA-72 pinout.Lacks STREN-configurable strobe channel and VBIAS-controlled pull-down; not suitable for DDR2 DQS idle compliance.Use only if strobe functionality is unused and ambient temperature stays ≤70 °C.
PI3CH4411LEX11-bit switch with 13 Ω RON, supports 1.5 V to 3.6 V VDD, no SSTL_18 select inputs, uses LVCMOS control logic.Requires level-shifting for SSTL_18 controller interfaces; lacks pseudo-differential S0/S1 decoding and VREF input.Select when operating outside 1.7–1.9 V or when SSTL_18 compatibility is not required.

Compared with NCP4411MNR2G and PI3CH4411LEX, the CBTU4411EE,557 uniquely delivers SSTL_18-select compatibility, strobe-mode configurability, and guaranteed ≤30 ps skew across 0–85 °C - making it the only option for full-spec DDR2 memory subsystems requiring rank multiplexing and DQS compliance.

Availability

CBTU4411EE,557 is available at Aetrix Electronics and suitable for DDR2 memory controller interfaces, 1-/2-rank DIMM selection circuits, differential strobe distribution networks, and high-speed data bus signal conditioning requiring stable component supply and long-term industrial lifecycle support.

Supply support for CBTU4411EE,557 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company specializing in secure connectivity solutions for automotive, industrial, and communication infrastructure markets.

The CBTU4411EE,557 belongs to NXP's DDR2 interface IC product line, designed specifically to solve signal integrity and routing challenges in high-density memory subsystems with strict timing and termination requirements.

FAQ

What is the operating voltage range for CBTU4411EE,557?

The CBTU4411EE,557 operates strictly within 1.7 V to 1.9 V supply voltage (VDD). This narrow range ensures compatibility with SSTL_18 logic levels and guarantees specified performance including 12 Ω ON-resistance, <30 ps skew, and proper pseudo-differential switching behavior. Operation outside this range may cause functional failure or parametric deviation.

How does the CBTU4411EE,557 support DDR2 differential strobe signaling?

The CBTU4411EE,557 supports DDR2 differential strobe signaling exclusively on channel 10 (HP10 and associated DIMM ports) when STREN is driven HIGH. In this mode, the unselected DIMM port is pulled up to 3⁄4×VDD via an internal 430–810 Ω resistor, satisfying DDR2 DQS idle-state voltage requirements without external components.

What is the function of the VBIAS pin on CBTU4411EE,557?

The VBIAS pin on CBTU4411EE,557 sets the termination voltage for the internal 400 Ω pull-down resistors on all DIMM ports (0DPn–3DP10). When the switch is disabled (EN = HIGH), VBIAS determines the DC bias level to which unselected ports are terminated - typically set to ≤0.33×VDD for standard DDR2 operation.

Can CBTU4411EE,557 be used in systems with non-SSTL_18 controllers?

The CBTU4411EE,557 requires SSTL_18-compatible select inputs (S0, S1) referenced to VREF = 0.5×VDD. Using non-SSTL_18 controllers necessitates level translation, as its pseudo-differential decoder is not compatible with generic LVCMOS or TTL logic thresholds. Direct connection risks incorrect channel selection or timing violations.

What is the maximum data rate supported by CBTU4411EE,557 in DDR2 applications?

The CBTU4411EE,557 is characterized for use in DDR2 data buses operating up to 400 MHz clock frequency (800 Mbit/s data rate). This is validated by its ≤100 ps propagation delay, <30 ps output skew, and low crosstalk design - all tested under 1.7–1.9 V VDD and 0–85 °C conditions per the official NXP datasheet.

CBTU4411EE,557 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
CBT
Package/Case:
72-LFBGA
Packaging:
Tray
Product Status:
Obsolete
Type:
Bus Switch
Circuit:
11 x 4:1
Independent Circuits:
1
Current - Output High, Low:
-
Voltage Supply Source:
Single Supply
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
72-LFBGA (7x7)

CBTU4411EE,557 FAQ

1.How can I place an order for CBTU4411EE,557 through Aetrix?

Please submit a Request for Quotation (RFQ) for CBTU4411EE,557 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CBTU4411EE,557 reliable?

The price and inventory of CBTU4411EE,557 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CBTU4411EE,557 is usually 5 days.

3.What payment methods are accepted for CBTU4411EE,557?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CBTU4411EE,557 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CBTU4411EE,557?

CBTU4411EE,557 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CBTU4411EE,557 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CBTU4411EE,557?

For technical support, including CBTU4411EE,557 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CBTU4411EE,557 requirements.

6.How does Aetrix verify that CBTU4411EE,557 is sourced from the original manufacturer or authorized distributors?

All CBTU4411EE,557 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CBTU4411EE,557 meets industry standards.

7.What is the process for return or replacement of CBTU4411EE,557?

All CBTU4411EE,557 units undergo pre-shipment inspection (PSI). If there is an issue with CBTU4411EE,557, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CBTU4411EE,557 part is unused and in its original packaging.

Return procedure for CBTU4411EE,557:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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