NXP Semiconductors CBTV24DD12ETY

Overview

CBTV24DD12ETY from NXP Semiconductors is a 12-bit bidirectional bus switch/multiplexer designed for DDR4/DDR3/DDR2 memory bus systems, supporting Pseudo Open Drain (POD_12), SSTL_12, SSTL_15, and SSTL_18 signaling at 1.8 V/2.5 V/3.3 V supply. It delivers 3200 MT/s throughput, 7.4 GHz bandwidth, and 65 ps propagation delay in a TFBGA48 package, enabling high-speed signal routing in NVDIMM modules and flash memory array subsystems.

For engineers reviewing the CBTV24DD12ETY datasheet, CBTV24DD12ETY pinout, CBTV24DD12ETY application, or CBTV24DD12ETY equivalent, key selection criteria include its 1:2 switch topology, low 6.5 Ω typical ON resistance, −3.0 dB insertion loss at 7 GHz, bidirectional FET-switch architecture, and operation across −10 °C to +85 °C ambient temperature.

Technical Context

The CBTV24DD12ETY implements a non-directional 12-bit 1:2 switch/MUX using high-speed pass-gate FET technology-no clock or reset required. Its dual-select logic (SEL0, SEL1) partitions the 12-bit bus into two independent 6-bit groups (A[0,1,4,5,8,9] and A[2,3,6,7,10,11]), each steerable independently between ports B and C.

Control inputs (SEL0, SEL1, EN) operate as CMOS-level signals up to 3.3 V, with EN asserting full isolation when HIGH. The device supports DDR termination schemes with glitch-free transitions and integrates back-current protection on all I/O pins alongside 2.5 kV HBM ESD robustness.

Key Specifications

Pinout & Package

CBTV24DD12ETY is housed in a 3.0 mm × 8.0 mm × 1.05 mm TFBGA48 package (SOT1365-1) with 0.65 mm ball pitch, Pb-free/Dark Green finish, and 48 solder balls arranged in a rectangular grid (13 × 4). Ball A1 denotes Pin 1 in Quadrant 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bus switch/multiplexer applications.

Compared with SN74CBT16212 and IDT74FCT162374, CBTV24DD12ETY uniquely combines DDR4-3200 speed, SSTL/POD signaling compliance, sub-70 ps propagation delay, and true bidirectional FET switching-making it the only option qualified for memory-channel-level multiplexing in industrial NVDIMM and DDR4 systems.

Availability

CBTV24DD12ETY is available at Aetrix Electronics and suitable for DDR4 memory channel switching, NVDIMM module design, and flash memory array subsystems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial embedded programs.

Supply support for CBTV24DD12ETY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company specializing in secure connectivity solutions for automotive, industrial, and communication infrastructure markets.

The CBTV24DD12ETY belongs to NXP's high-speed memory interface switch product line, engineered specifically to address signal integrity, timing, and DDR protocol-compliant routing challenges in next-generation memory subsystems.

FAQ

What signaling standards does CBTV24DD12ETY support?

CBTV24DD12ETY supports Pseudo Open Drain (POD_12), SSTL_12, SSTL_15, and SSTL_18 signaling standards. It is explicitly designed for DDR4, DDR3, and DDR2 memory bus systems, with input/output levels compliant across 1.8 V, 2.5 V, and 3.3 V supply voltages. The CBTV24DD12ETY datasheet confirms these interfaces are validated for use in actual DDR termination schemes with glitch-free transitions.

How does the SEL0/SEL1 pin logic partition the 12-bit bus in CBTV24DD12ETY?

In CBTV24DD12ETY, SEL0 controls switching for bits A[0,1,4,5,8,9] (six bits), directing them between ports B and C. SEL1 independently controls A[2,3,6,7,10,11] (the remaining six bits) using identical B/C routing. This dual-select architecture allows asymmetric path assignment-for example, A[0:5] routed to B while A[6:11] routes to C-enabling flexible memory subsystem topologies without requiring external logic.

What is the maximum operating temperature range for CBTV24DD12ETY?

The CBTV24DD12ETY is characterized for operation from −10 °C to +85 °C ambient temperature. This industrial-grade temperature range is confirmed in Section 9 (Recommended Operating Conditions) of the official NXP datasheet Rev. 2 (15 November 2017) and applies to all specified electrical and dynamic parameters including 3200 MT/s throughput and 7.4 GHz bandwidth performance.

Does CBTV24DD12ETY require external clocking or reset signals to operate?

No, CBTV24DD12ETY does not require any external clock or reset signal. Its high-bandwidth pass-gate FET architecture operates transparently based solely on the CMOS-level SEL0, SEL1, and EN control inputs. As stated in Section 7 (Functional Description), "No clock or reset signal is needed for the multiplexer to function"-making CBTV24DD12ETY ideal for asynchronous memory bus switching applications.

What package type and dimensions does CBTV24DD12ETY use?

CBTV24DD12ETY uses the TFBGA48 package (SOT1365-1): 3.0 mm × 8.0 mm × 1.05 mm body size with 0.65 mm ball pitch and 48 solder balls. The package is Pb-free/Dark Green compliant and features a defined pin 1 location (ball A1 in Quadrant 1), as documented in Figures 2–6 and Table 1 of the NXP CBTV24DD12ETY datasheet Rev. 2.