NXP Semiconductors CBTV4010EE,557

Overview

CBTV4010EE,557 from Philips Semiconductors is a 10-bit DDR SDRAM multiplexer/bus switch designed for 2.3 V to 2.7 V operation with SSTL_2-compatible enable inputs. It provides 20 Ω nominal on-resistance, 7 pF channel on-capacitance, and <50 ps output skew, enabling high-fidelity signal routing in DDR memory subsystems with dual-bank DIMM support.

For engineers reviewing the CBTV4010EE,557 datasheet, CBTV4010EE,557 pinout, CBTV4010EE,557 application, or CBTV4010EE,557 equivalent, key selection criteria include its 140 ps propagation delay, 100 Ω internal pull-down termination on DIMM ports, latch-up immunity (>500 mA), and TFBGA64 package compatibility with DDR-400 (200 MHz) data buses.

Technical Context

The CBTV4010EE,557 implements four independent 10-bit bidirectional analog switches controlled by S0–S3 select lines, each connecting one Host port (HP0–HP9) to one of four DIMM port groups (0DP0–3DP9). Its low RC time constant (20 Ω × 7 pF) minimizes propagation delay while maintaining signal integrity across DDR data and DQM lines.

Each switch features SSTL_2-compliant control inputs, 100 Ω on-chip pull-down resistors active during disable state, and matched rise/fall slew rates to suppress differential skew. The device supports simultaneous activation of only one DIMM port group, preventing bus contention in multi-DIMM memory configurations.

Key Specifications

Pinout & Package

CBTV4010EE,557 is housed in a 64-ball Thin Fine-Pitch BGA (TFBGA64) package measuring 7 mm × 7 mm × 0.7 mm (SOT746-1), optimized for high-density DDR memory module layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SDRAM bus switching applications.

Compared with CBTV4010EE,557, the CBT3244AD,118 and SN74CBT3245APW lack DDR-specific optimizations-such as SSTL_2 compatibility, 100 Ω pull-downs, and sub-50 ps skew-making them unsuitable for production DDR-400 memory interfaces despite functional similarity in basic bus switching.

Availability

CBTV4010EE,557 is available at Aetrix Electronics and suitable for DDR memory module interfacing, dual-bank DIMM selection, and DDR data bus multiplexing requiring stable component supply and long-term lifecycle support.

Supply support for CBTV4010EE,557 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Philips Semiconductors (now NXP Semiconductors) is a global semiconductor innovator with leadership in analog, logic, and interface solutions for computing and communications infrastructure.

The CBTV4010EE,557 belongs to Philips' DDR interface logic product line, engineered specifically to solve signal integrity and routing challenges in high-speed DDR memory subsystems with multi-DIMM support.

FAQ

What is the operating voltage range for CBTV4010EE,557?

The CBTV4010EE,557 operates from 2.3 V to 2.7 V on VCC, aligning precisely with DDR SDRAM core voltage specifications. This narrow range ensures compatibility with SSTL_2 signaling levels and avoids overvoltage stress on internal FETs. Operation outside this window may compromise on-resistance stability or timing performance. The CBTV4010EE,557 is not rated for 3.3 V or 1.8 V operation.

Does CBTV4010EE,557 support true bidirectional signal flow?

Yes, the CBTV4010EE,557 supports fully bidirectional operation between HPx and nDPx terminals without direction control pins. Signal flow direction depends solely on which side drives the line-host or DIMM-enabling seamless DDR read/write cycles. The CBTV4010EE,557 maintains identical 20 Ω on-resistance and 7 pF capacitance in both directions, verified per AC characteristics table.

How does the 100 Ω internal pull-down function in CBTV4010EE,557?

The CBTV4010EE,557 activates 100 Ω pull-down resistors on all DIMM port pins (0DP0–3DP9) whenever the corresponding Sx select line is high, placing the switch in high-impedance mode. This prevents floating nodes during DIMM bank deselection and ensures clean bus termination without external components. The CBTV4010EE,557 does not provide pull-ups or configurable termination.

Is CBTV4010EE,557 compatible with DDR2 or DDR3 memory standards?

No, the CBTV4010EE,557 is characterized exclusively for DDR (DDR1) applications at 200 MHz/400 Mbps. Its timing specs-including 140 ps propagation delay and <50 ps skew-are validated only for DDR-400 waveforms and SSTL_2 voltage levels. The CBTV4010EE,557 lacks DDR2/DDR3-specific features like ODT control or fly-by topology support.

What is the thermal performance rating of CBTV4010EE,557?

The CBTV4010EE,557 is rated for operation from 0 °C to +85 °C ambient temperature, with thermal characteristics defined per JESD51. Its TFBGA64 package (SOT746-1) has a specified thermal impedance that supports continuous operation at full speed within this range when mounted per recommended PCB layout guidelines. The CBTV4010EE,557 does not include thermal shutdown or junction temperature monitoring.