Texas Instruments CCB3T1G125QDCKRQ1

Overview

CCB3T1G125QDCKRQ1 from Texas Instruments is an automotive-qualified 1-bit FET bus switch with bidirectional signal flow, 2.3 V–3.6 V V_CC operation, 5 Ω typical ON-state resistance, 5-V-tolerant I/Os, and I_off partial-power-down support - used for level translation between mixed-voltage domains in USB interfaces and automotive infotainment data buses.

For engineers reviewing the CCB3T1G125QDCKRQ1 datasheet, CCB3T1G125QDCKRQ1 pinout, CCB3T1G125QDCKRQ1 application, or CCB3T1G125QDCKRQ1 equivalent, key selection criteria include its 5-V-tolerant I/O capability under 2.5/3.3-V V_CC, near-zero propagation delay (<10.5 ns), low 5 pF OFF-state capacitance, and automotive-grade –40°C to 125°C operation.

Technical Context

The CCB3T1G125QDCKRQ1 implements a single-channel analog FET switch controlled by an active-low OE input, enabling bidirectional A↔B connection when enabled and high-impedance isolation when disabled. Its gate drive architecture tracks V_CC, allowing output voltage translation across 0–5 V signaling levels while maintaining TTL/CMOS compatibility on control inputs.

This device supports true mixed-mode operation: data I/Os accept 0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, and 5 V logic levels regardless of V_CC, and control inputs tolerate 5-V inputs even at 2.5-V V_CC. The integrated undershoot clamp diodes and I_off protection ensure robustness during power sequencing and partial-power-down states.

Key Specifications

Pinout & Package

CCB3T1G125QDCKRQ1 is housed in a 5-pin SC-70 (DCK) package measuring 2.15 mm × 1.40 mm × 1.10 mm max height, optimized for space-constrained automotive modules and portable infotainment units.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar FET bus switch applications.

Compared with SN74CB3T1G125 and TS3A27518E, the CCB3T1G125QDCKRQ1 uniquely combines AEC-Q100 qualification, 5-V-tolerant I/Os at 2.5-V V_CC, and single-channel optimization - making it the only drop-in solution for safety-critical automotive bus isolation where voltage domain bridging and zero-layout-change replacement are required.

Availability

CCB3T1G125QDCKRQ1 is available at Aetrix Electronics and suitable for automotive infotainment systems, ADAS camera interfaces, and engine control unit diagnostics requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for CCB3T1G125QDCKRQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and automotive electronics, with over 50 years of innovation in high-reliability signal-path solutions.

The CCB3T1G125QDCKRQ1 belongs to TI's automotive-qualified CB3T bus switch family, designed specifically for voltage-domain bridging and hot-swap-safe signal isolation in next-generation vehicle networks.

FAQ

What is the maximum allowable input voltage on the A and B pins of the CCB3T1G125QDCKRQ1?

The CCB3T1G125QDCKRQ1 supports a data I/O voltage range of –0.5 V to 7 V, with absolute maximum rating of 7 V on A and B pins. However, for reliable operation under recommended conditions, the input voltage must stay within 0 V to 5.5 V. This 5-V-tolerant capability holds whether the device is powered (V_CC = 2.3–3.6 V) or unpowered (V_CC = 0 V), making the CCB3T1G125QDCKRQ1 suitable for hot-swap applications in automotive modules.

Does the CCB3T1G125QDCKRQ1 support level translation from 1.8 V to 5 V?

Yes, the CCB3T1G125QDCKRQ1 supports bidirectional level translation between 1.8 V and 5 V domains. When V_CC = 2.5 V or 3.3 V, the output voltage tracks V_CC, and the device accepts 0–5 V signaling on both A and B ports. For example, with 1.8 V applied to A and V_CC = 2.5 V, the B port outputs ~2.5 V; conversely, 5 V on B yields ~2.5 V on A. This behavior is confirmed in Figure 1 and the DC voltage translation characteristics of the CCB3T1G125QDCKRQ1 datasheet.

How does the I_off feature function in the CCB3T1G125QDCKRQ1 during system power-down?

The I_off feature in the CCB3T1G125QDCKRQ1 disables current flow between A and B terminals when V_CC = 0 V, limiting reverse current to ≤10 μA even with 5.5 V present on either I/O pin. This prevents backfeeding into powered-down subsystems - a critical requirement for automotive modules meeting ISO 16750-2 quiescent current limits. The CCB3T1G125QDCKRQ1 achieves this via internal FET cutoff and isolation structures validated across –40°C to 125°C.

What is the recommended pull-up resistor value for the OE pin of the CCB3T1G125QDCKRQ1 during power-up?

Texas Instruments recommends tying the OE pin of the CCB3T1G125QDCKRQ1 to V_CC through a pull-up resistor to ensure high-impedance state during power-up/down. The minimum resistor value depends on the current-sinking capability of the driving source; for standard CMOS drivers, a 10-kΩ resistor is typical. This guarantees OE remains high (switch OFF) until the host controller actively drives it low, preventing unintended signal coupling during boot sequences in automotive ECUs using the CCB3T1G125QDCKRQ1.

Is the CCB3T1G125QDCKRQ1 pin-compatible with other SC-70 packaged bus switches?

The CCB3T1G125QDCKRQ1 uses a standard 5-pin SC-70 (DCK) footprint per JEDEC MO-203, matching pin 1 location, pad dimensions, and thermal pad layout of TI's SN74CB3T1G125 and compatible alternatives. However, pin functionality differs from non-CB3T families (e.g., TS5A series), so electrical validation is required before substitution. The CCB3T1G125QDCKRQ1's OE/A/GND/V_CC/B pinout is fixed and documented in the official TI package drawing DCK0005A.