Infineon Technologies CG7480AT

Overview

CG7480AT from Infineon Technologies (formerly Cypress) is a 8-Mbit (512 K × 16) high-speed CMOS static RAM with 15 ns access time, 3.3 V ±0.3 V supply, and industrial temperature range (–40 °C to +125 °C). It supports byte-wide writes via independent BHE/ BLE controls and features automatic CE power-down for low standby current (20 mA), used in real-time control modules requiring deterministic memory access.

For engineers reviewing the CG7480AT datasheet, CG7480AT pinout, CG7480AT application, or CG7480AT equivalent, key selection criteria include tAA ≤15 ns read timing, ISB2 = 20 mA CMOS standby current, dual-byte enable architecture, and 44-pin TSOP II package with center VCC/VSS pinout for thermal and signal integrity optimization.

Technical Context

The CG7480AT implements a fully asynchronous 512 K × 16 SRAM array with TTL-compatible I/Os and independent byte write enables (BHE/BLE) enabling selective 8-bit writes without external logic. Its read cycle is governed by tAA = 15 ns and tDOE = 7 ns, while write timing requires tWC = 15 ns and tSD = 7 ns data setup.

Power management includes two standby modes: ISB1 = 60 mA (TTL input thresholds) and ISB2 = 20 mA (CMOS input thresholds), activated automatically on CE HIGH. Data retention operates down to VDR = 2.0 V with ICCDR ≤20 mA, supporting low-power hold states in safety-critical systems.

Key Specifications

Pinout & Package

CG7480AT uses a 44-pin Thin Small Outline Package (TSOP II) with center power/ground pin arrangement (VCC at pins 15/36, VSS at pins 14/35) to minimize voltage droop and improve thermal performance in dense PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Compared with IS61LV51216AL-15TI and AS6C4008-15TIN, CG7480AT uniquely delivers dual-byte write enables and 20 mA CMOS standby current in the same 44-pin TSOP II footprint-enabling both hardware-level write granularity and extended battery runtime in resource-constrained embedded systems.

Availability

CG7480AT is available at Aetrix Electronics and suitable for automotive engine control units, industrial programmable logic controllers, railway signaling systems, and medical infusion pump designs requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CG7480AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The CG7480AT belongs to Infineon's legacy Cypress SRAM product line, designed specifically for high-reliability embedded systems demanding fast, deterministic, and temperature-resilient memory with minimal external support circuitry.

FAQ

What is the minimum VCC required to maintain data during retention mode?

The CG7480AT guarantees data retention down to VCC = 2.0 V, with ICCDR ≤20 mA under those conditions. This is specified in the Data Retention Characteristics table (page 6 of Rev. *A datasheet) and validated across the full –40 °C to +125 °C temperature range. No external bias or refresh is needed during retention.

Can CG7480AT operate with 5 V TTL inputs while powered at 3.3 V?

Yes - its inputs are TTL-compatible: VIH(min) = 2.0 V and VIL(max) = 0.8 V, allowing direct connection to 5 V logic outputs without level shifters. The device operates at 3.3 V VCC, and all DC input voltage limits (–0.3 V to VCC + 0.3 V) remain satisfied under this interface condition.

How does automatic power-down behave when CE is HIGH but BHE/BLE are LOW?

When CE is HIGH, the device enters automatic power-down regardless of BHE/BLE state - I/Os go high-impedance, internal array is deselected, and ISB2 = 20 mA is drawn. BHE/BLE have no effect unless CE is LOW; they only gate data paths during active read/write cycles.

Is the 44-pin TSOP II package RoHS-compliant and lead-free?

Yes - the CG7480AT is explicitly offered in a Pb-free 44-pin TSOP II package per the "Ordering Information" section (page 12 of Rev. *A datasheet). Infineon confirms full RoHS compliance, including exemption 7a for lead in high-melting-temperature solder alloys used in internal die attachment.