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Infineon Technologies CG7600AA

Part No.:
CG7600AA
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCG7600AA.pdf
Description:
IC SRAM 18MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:201

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Product details

Overview

CG7600AA from Cypress Semiconductor is a 18-Mbit DDR II SRAM with two-word burst architecture, configured as 1M × 18 (CY7C1318KV18), operating at 333 MHz clock frequency and delivering 666 MHz double-data-rate throughput. It uses synchronous pipelined read/write operations with 1.5-cycle read latency (DOFF = HIGH) or 1-cycle latency (DOFF = LOW), and features HSTL I/O compatible with 1.5 V or 1.8 V supply. It serves as high-bandwidth buffer memory in network packet processors and telecom line cards.

For engineers reviewing the CG7600AA datasheet, CG7600AA pinout, CG7600AA application, or CG7600AA equivalent, key selection criteria include DDR-II timing compliance, echo clock (CQ/CQ) support for skew-tolerant data capture, dual-input clock domain (K/K and C/C), 165-ball FBGA package compatibility, and JTAG 1149.1 test access capability.

Technical Context

This SRAM implements a synchronous, pipelined DDR-II interface with internal burst counter driven by A0, latching addresses on alternate rising edges of K/K clocks. Write data is registered on both K and K edges; read data is output synchronized to C/C (or K/K in single-clock mode), with echo clocks CQ/CQ phase-aligned to output data for controller-side capture.

The device integrates a PLL for precise data placement, supports programmable output impedance via ZQ calibration, and provides byte-write select (BWS0–BWS1) for granular 9-bit writes. It operates from a 1.8 V core supply with HSTL-compatible I/Os rated for 1.4 V–VDD output swing, enabling interoperability across mixed-voltage DDR systems.

Key Specifications

Parameter Value and Actual Design Meaning
Density 18 Mbit (1M × 18 configuration)
Max Clock Frequency 333 MHz - sets maximum sustained bandwidth of 1.2 GB/s (18-bit × 2 words × 333 MHz)
Data Rate 666 MT/s DDR - enables double-edge sampling without requiring controller-side strobe multiplication
Read Latency 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - selectable trade-off between timing margin and pipeline depth
I/O Voltage Support 1.5 V or 1.8 V VDDQ - allows direct interfacing with legacy 1.5 V DDR-I controllers or newer 1.8 V systems
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count DDR memory in space-constrained telecom modules
Core Supply 1.8 V ± 0.1 V - low-voltage core reduces dynamic power vs. 2.5 V SRAMs while maintaining speed

Pinout & Package

CG7600AA is housed in a 165-ball fine-pitch ball grid array (FBGA) package measuring 13 mm × 15 mm × 1.4 mm, RoHS-compliant and available in both Pb-free and non-Pb-free variants. Pin assignments follow the CY7C1318KV18 layout with 18-bit data bus (DQ[17:0]), dual input clocks (K/K), dual output clocks (C/C), echo clocks (CQ/CQ), and dedicated control signals including LD, R/W, and BWS0/BWS1.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data bus Shares physical pins for read output and write input; driven on C/C rising edges during reads, sampled on K/K edges during writes
K / K Positive/negative input clocks Used jointly to latch all synchronous inputs (address, R/W, LD, BWS); defines timing reference for write setup/hold and address registration
C / C Positive/negative output data clocks Control timing of Q[17:0] output edges; enable board-level deskewing when paired with multiple SRAMs
CQ / CQ Echo clocks referenced to C/C Free-running, phase-aligned copies of C/C; simplify controller design by eliminating need for separate capture strobes per device
LD Load signal Active-low synchronous enable that initiates each burst transaction; must be asserted one cycle before R/W and address valid
BWS0 / BWS1 Byte write selects Active-low controls 9-bit sub-word writes: BWS0 → DQ[8:0], BWS1 → DQ[17:9]; preserves unwritten bytes during partial writes

Key Features

Feature Design Value
Two-word burst architecture Reduces external address bus toggling by 50% versus single-word SRAMs, lowering EMI and routing complexity in high-speed backplanes
Programmable output impedance (ZQ) Enables on-die termination matching to PCB trace impedance (via external RQ resistor), minimizing reflections without discrete terminators
JTAG 1149.1 test access port Supports boundary-scan testing of SRAM interconnects in dense BGA layouts, reducing need for physical probe access
Variable-drive HSTL outputs Adjustable drive strength mitigates simultaneous switching noise (SSN) in multi-device DDR channels without sacrificing edge rate
Single/dual clock mode flexibility Allows fallback to K/K-only operation when C/C are unavailable, preserving functionality in simplified controller designs

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and metadata in 10G Ethernet switch ASICs with tight latency budgets.

IC Role / Device Role / Timing Role: High-throughput, low-latency SRAM acting as first-level buffering between MAC and traffic manager, synchronized to system DDR clock domain.

Use Value: 1.5-cycle read latency and echo clocks ensure deterministic header fetch within one controller clock cycle, enabling wire-speed classification.

Use Scenario: Holding real-time voice channel buffers and signaling tables in TDM-over-IP gateway hardware.

IC Role / Device Role / Timing Role: Dual-port-capable burst SRAM providing concurrent access to time-slot assignment logic and jitter buffer management firmware.

Use Value: Two-word burst mode delivers full 36-bit context word per access, eliminating split reads and reducing channel arbitration overhead.

Baseband Processing Cache Radar Signal Preprocessing

Use Scenario: Serving as L1 cache for LTE/LTE-A baseband processors handling OFDM symbol assembly and channel estimation.

IC Role / Device Role / Timing Role: Pipelined SRAM interfaced directly to DSP's memory-mapped bus, using C/C and CQ/CQ for glitch-free burst transfers.

Use Value: 666 MT/s DDR interface sustains >1.1 GB/s sustained bandwidth required for 20 MHz LTE carrier processing at 120 MSPS sample rate.

Use Scenario: Buffering digitized IF samples prior to FFT-based Doppler processing in automotive radar ECU modules.

IC Role / Device Role / Timing Role: Deterministic-latency memory staging data from ADC interface to FPGA-based FFT engine, synchronized via echo clocks.

Use Value: Programmable ZQ termination ensures clean 333 MHz clock domain transitions across 12+ channel radar sensor arrays with minimal inter-channel skew.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR-II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS45S16160J-6BLI 16-Mbit (1M × 16), 333 MHz, single-ended SSTL-18 I/O, no echo clocks or ZQ calibration Lacks CQ/CQ and impedance tuning; requires external termination and tighter board layout control Preferred where cost sensitivity outweighs timing margin needs and controller lacks echo clock inputs
MT45W8MW16BGX-60D 16-Mbit (512K × 32), 300 MHz, DDR2 SDRAM architecture with auto-refresh, not SRAM Requires periodic refresh, higher latency, but offers larger density per package and lower cost per bit Selected when application tolerates microsecond-scale refresh pauses and prioritizes density over deterministic access

Compared with IS45S16160J-6BLI and MT45W8MW16BGX-60D, CG7600AA uniquely combines true SRAM determinism, echo-clock–assisted data capture, and on-die impedance tuning-making it optimal for latency-critical, multi-device DDR-II memory subsystems where signal integrity and timing predictability are non-negotiable.

Availability

CG7600AA is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and radar signal preprocessing requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for CG7600AA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CG7600AA belongs to Cypress's DDR-II SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in telecom infrastructure and packet-processing systems where nanosecond-level timing control and signal integrity are critical.

FAQ

What is the function of the DOFF pin on CG7600AA?

The DOFF (Data Output OFF) pin selects read latency mode: when asserted HIGH, it enables DDR-II mode with 1.5-cycle read latency for improved timing margin; when LOW, it reverts to DDR-I–compatible 1-cycle latency. This pin is sampled synchronously on the rising edge of K and affects only read operations-not writes, burst length, or clocking architecture.

Can CG7600AA operate without external C and C clocks?

Yes-CG7600AA supports single-clock mode where K and K serve as both input and output clocks. In this mode, C and C are unused, CQ and CQ are generated relative to K/K, and data output timing references K/K edges. All functionality remains intact, though board-level deskew capability is lost without dedicated C/C pairs.

How does ZQ calibration work on CG7600AA?

ZQ calibration adjusts output driver impedance by comparing internal reference to an external precision resistor (RQ) tied between ZQ and GND. The device sets CQ, CQ, and DQ[17:0] output impedance to 0.2 × RQ. If ZQ is tied to VDDQ instead, minimum impedance mode activates. ZQ must never be left floating or connected to GND.

Is CG7600AA pin-compatible with CY7C1320KV18?

No-CG7600AA maps to CY7C1318KV18 (1M × 18), which uses 18-bit DQ[17:0] and BWS0/BWS1. CY7C1320KV18 is 512K × 36 with DQ[35:0] and BWS0–BWS3. Their FBGA pinouts differ significantly: e.g., DQ18–DQ35 and BWS2/BWS3 exist only on CY7C1320KV18, and address count differs (20 vs. 19 bits).

CG7600AA Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CG7600AA FAQ

1.How can I place an order for CG7600AA through Aetrix?

Please submit a Request for Quotation (RFQ) for CG7600AA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CG7600AA reliable?

The price and inventory of CG7600AA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CG7600AA is usually 5 days.

3.What payment methods are accepted for CG7600AA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CG7600AA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CG7600AA?

CG7600AA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CG7600AA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CG7600AA?

For technical support, including CG7600AA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CG7600AA requirements.

6.How does Aetrix verify that CG7600AA is sourced from the original manufacturer or authorized distributors?

All CG7600AA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CG7600AA meets industry standards.

7.What is the process for return or replacement of CG7600AA?

All CG7600AA units undergo pre-shipment inspection (PSI). If there is an issue with CG7600AA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CG7600AA part is unused and in its original packaging.

Return procedure for CG7600AA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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