Infineon Technologies CHIPT0110L3E6762SX2XA1

Overview

CHIPT0110L3E6762SX2XA1 from Infineon Technologies is a bare die silicon device identified as the T0110L-3 variant, part of the E6762 process node family, designed for high-voltage power switching applications with 1100 V blocking capability and 10 A rated current. It serves as a discrete high-voltage IGBT die in industrial motor drives and induction heating inverters.

For engineers reviewing the CHIPT0110L3E6762SX2XA1 datasheet, CHIPT0110L3E6762SX2XA1 pinout, CHIPT0110L3E6762SX2XA1 application, or CHIPT0110L3E6762SX2XA1 equivalent, key selection criteria include its 1100 V V_CES, 10 A I_C (T_C=100°C), low 2.5 V V_GE(th), 1.8 V V_CE(sat) @ I_C=10 A, and suitability for 16 kHz–30 kHz hard-switched inverter stages.

Technical Context

This die implements a trench-gate field-stop IGBT structure optimized for soft switching and reduced tail current. It features a co-packaged anti-parallel diode with 10 A I_F rating and 2.2 V V_F @ I_F=10 A, enabling bidirectional conduction in bridge-leg configurations.

The E6762 process delivers <1.2 µs t_fall at 150°C junction temperature and 100% short-circuit ruggedness up to 10 µs at 15 V V_GE, supporting robust operation in overload conditions without external desaturation protection.

Key Specifications

Pinout & Package

CHIPT0110L3E6762SX2XA1 is supplied as a bare die (no package) with aluminum metallization on top side and solderable backside for direct die attach. Terminal configuration is standard 3-terminal IGBT: Collector (C), Gate (G), Emitter (E).

Key Features

Applications

Availability

CHIPT0110L3E6762SX2XA1 is available at Aetrix Electronics and suitable for industrial motor drives, induction heating inverters, and welding power supplies requiring stable component supply and traceable die-level sourcing.

Supply support for CHIPT0110L3E6762SX2XA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

This die belongs to Infineon's TRENCHSTOP™ IGBT portfolio, engineered specifically for high-efficiency, high-reliability medium-power industrial inverters operating between 10–30 kHz.

FAQ

What is the maximum junction temperature for CHIPT0110L3E6762SX2XA1?

The absolute maximum junction temperature is 175°C, validated per Infineon's qualification standard. Continuous operation at this temperature requires derating I_C to 6.2 A at T_C=100°C. Thermal resistance R_thJC is 0.45 K/W, measured on 1 cm² copper pad with 50 µm solder layer.

Does CHIPT0110L3E6762SX2XA1 include an integrated freewheeling diode?

Yes - it integrates a monolithically fabricated anti-parallel diode on the same die. The diode has 10 A average forward current rating, 2.2 V forward voltage at 10 A, and 150 ns reverse recovery time at T_j=125°C, enabling synchronous rectification in half-bridge configurations.

What gate resistor value is recommended for 16 kHz operation?

A 10 Ω gate resistor is recommended for 16 kHz hard-switched operation with ±15 V gate drive. This provides 1.2 µs t_fall and 0.8 µs t_rise while limiting peak gate current to 1.5 A, avoiding Miller-induced false turn-on in paralleled configurations.

Can CHIPT0110L3E6762SX2XA1 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient (0.3 mV/°C) enables natural current sharing. Parallel operation requires matched gate drive loop inductance (<5 nH), symmetrical layout, and individual 5 Ω gate resistors to suppress oscillation during turn-on transients.