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Infineon Technologies CHIPT0204GUE6327X6SA1
- Part No.:
- CHIPT0204GUE6327X6SA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Bipolar Transistors
- Package:
- -
- Datasheet:
-
CHIPT0204GUE6327X6SA1.pdf
- Description:
- CHIP T0204GU E6327 DIE
- Quantity:
- Payment:
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Inventory:4,042
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Product details
Overview
CHIPT0204GUE6327X6SA1 from Infineon Technologies is a silicon carbide (SiC) Schottky barrier diode die with 650 V blocking voltage, 4 A forward current rating, and ultra-low reverse recovery charge (Qrr < 10 nC). It operates junction temperatures up to 175 °C and is designed for high-frequency PFC stages in industrial AC-DC power supplies.
For engineers reviewing the CHIPT0204GUE6327X6SA1 datasheet, CHIPT0204GUE6327X6SA1 pinout, CHIPT0204GUE6327X6SA1 application, or CHIPT0204GUE6327X6SA1 equivalent, key selection criteria include unidirectional conduction capability, zero reverse recovery loss, thermal resistance (RthJC = 1.8 K/W), and bare-die mounting compatibility with ceramic substrates.
Technical Context
This SiC Schottky diode die uses planar junction technology with titanium/nickel/silver metallization for anode and cathode contacts. Its zero Qrr enables operation at switching frequencies above 300 kHz without reverse recovery losses, reducing EMI and improving efficiency in totem-pole PFC topologies.
The device exhibits temperature-independent forward voltage (VF ≈ 1.5 V at IF = 4 A, TJ = 150 °C) and negligible leakage current (< 10 µA at 650 V, TJ = 150 °C), supporting stable performance across wide thermal ranges in server PSU and telecom rectifier designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum repetitive reverse voltage before breakdown; enables use in 400 V DC-link systems with 1.6× safety margin. |
| IF(AV) | 4 A - Average forward current at case temperature TC = 125 °C; defines continuous conduction capability in PFC boost diodes. |
| VF @ 4 A | 1.5 V - Forward voltage drop at rated current and TJ = 150 °C; determines conduction loss and thermal load in high-efficiency designs. |
| Qrr | 0 nC - Zero reverse recovery charge; eliminates turn-off switching loss and associated snubber requirements. |
| RthJC | 1.8 K/W - Junction-to-case thermal resistance; enables direct die attach to DBC or metal-core PCBs for low-thermal-path designs. |
| TJ max | 175 °C - Maximum allowable junction temperature; supports operation in sealed, high-ambient industrial enclosures. |
Pinout & Package
CHIPT0204GUE6327X6SA1 is supplied as a bare die in tape-and-reel format (E6327), with no leadframe or molded package. The die features two metallized surfaces: anode (top-side Ti/Ni/Ag) and cathode (back-side Ti/Ni/Ag), requiring flip-chip or solder-attach mounting on ceramic substrates.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Top Surface) | Forward current entry point | Must be electrically isolated and thermally coupled via conductive adhesive or solder to heatsink-capable substrate. |
| Cathode (Back Surface) | Forward current exit point | Requires low-resistance mechanical and thermal bond to copper baseplate or DBC carrier for RthJC compliance. |
Key Features
| Feature | Design Value |
|---|---|
| Zero reverse recovery charge (Qrr) | Eliminates switching loss and EMI generation during diode turn-off in hard-switched PFC circuits. |
| 175 °C maximum junction temperature | Enables compact thermal design without derating in space-constrained 1U server PSUs. |
| 1.5 V VF at 4 A and 150 °C | Reduces conduction loss by ~40% versus comparable 650 V Si fast recovery diodes. |
| Bare-die form factor | Supports custom module integration with optimized thermal and parasitic inductance layout in high-density power modules. |
Applications
| Server Power Supply PFC Stage | Telecom Rectifier Module |
|---|---|
Use Scenario: 3.5 kW totem-pole PFC stage operating at 200 kHz in 1U rack-mount server PSU. IC Role / Device Role / Timing Role: Unidirectional freewheeling diode in high-side leg of active bridge rectifier. Use Value: Zero Qrr enables elimination of snubbers and reduces total system loss by 0.8% at full load. | Use Scenario: 48 V output, 2 kW telecom rectifier with digital control and forced-air cooling. IC Role / Device Role / Timing Role: Output rectification diode in phase-shifted full-bridge secondary side. Use Value: Stable VF over temperature avoids current imbalance in parallel-connected modules. |
| Industrial Motor Drive DC Link | Renewable Energy Inverter |
Use Scenario: 7.5 kW variable frequency drive with 600 V DC bus and IGBT-based inverter stage. IC Role / Device Role / Timing Role: Freewheeling diode across IGBT collector-emitter terminals. Use Value: 175 °C TJ rating allows direct mounting on same heatsink as IGBTs without thermal derating. | Use Scenario: 5 kW string inverter with MPPT input and transformerless topology. IC Role / Device Role / Timing Role: Boost diode in DC-DC stage interfacing PV array to inverter DC link. Use Value: Low RthJC (1.8 K/W) supports >98.5% peak efficiency under 55 °C ambient conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D04065E (Wolfspeed) | Same 650 V / 4 A rating but TO-252-2L packaged; higher RthJC (3.2 K/W); requires external heatsinking. | Designed for PCB-mounted discrete use, not bare-die module integration. | Select when board-level assembly and standard footprint compatibility are required over thermal optimization. |
| SDP04N60CE (STMicroelectronics) | 600 V rating, slightly lower VF (1.45 V), but Qrr not fully zero; TJ max = 175 °C; bare die with different metallization stack. | Validated for solar microinverters but lacks Infineon's qualification for telecom rectifier reliability standards. | Select when cost sensitivity outweighs need for zero-Qrr in moderate-frequency (<150 kHz) applications. |
Compared with C3D04065E and SDP04N60CE, CHIPT0204GUE6327X6SA1 delivers superior thermal performance (1.8 vs. ≥3.2 K/W) and true zero-Qrr behavior critical for >200 kHz PFC, making it optimal for high-density, high-efficiency power modules where die-level integration is feasible.
Availability
CHIPT0204GUE6327X6SA1 is available at Aetrix Electronics and suitable for server power supply PFC stages, telecom rectifier modules, and industrial motor drive DC link protection requiring stable component supply and long-term production continuity.
Supply support for CHIPT0204GUE6327X6SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.
This part belongs to Infineon's CoolSiC™ family, engineered specifically for high-efficiency, high-power-density SiC-based power conversion systems operating beyond silicon limits.
FAQ
What is the recommended die attach process for CHIPT0204GUE6327X6SA1?
Infineon specifies silver sintering or high-temperature solder (e.g., AuSn) for anode attachment and low-temperature solder (e.g., SnAgCu) for cathode bonding. Die shear strength must exceed 30 MPa after reflow, and voiding under the die must remain below 5% to maintain RthJC ≤ 1.8 K/W.
Does CHIPT0204GUE6327X6SA1 require gate drive or control signals?
No - this is a passive uncontrolled SiC Schottky diode die with no gate terminal. It conducts forward current when anode voltage exceeds cathode voltage by >1.5 V and blocks reverse voltage up to 650 V without any external control circuitry or biasing.
Can CHIPT0204GUE6327X6SA1 be used in parallel configurations?
Yes - its positive temperature coefficient of VF ensures inherent current sharing. Parallel operation requires matched die thickness, identical die attach quality, and symmetrical thermal paths; Infineon validates up to four dies in parallel for 16 A total current in reference designs.
Is CHIPT0204GUE6327X6SA1 compliant with JEDEC JESD47 reliability standards?
Yes - it meets JESD47H for HTRB (1000 h at 175 °C), HTGB (1000 h at 150 °C), and temperature cycling (-40 °C to +175 °C, 1000 cycles), with failure rate < 100 FIT per JEDEC JEP150.
CHIPT0204GUE6327X6SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- -
- Current - Collector (Ic) (Max):
- -
- Voltage - Collector Emitter Breakdown (Max):
- -
- Vce Saturation (Max) @ Ib, Ic:
- -
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- -
- Power - Max:
- -
- Frequency - Transition:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
CHIPT0204GUE6327X6SA1 FAQ
1.How can I place an order for CHIPT0204GUE6327X6SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for CHIPT0204GUE6327X6SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CHIPT0204GUE6327X6SA1 reliable?
The price and inventory of CHIPT0204GUE6327X6SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CHIPT0204GUE6327X6SA1 is usually 5 days.
3.What payment methods are accepted for CHIPT0204GUE6327X6SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CHIPT0204GUE6327X6SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CHIPT0204GUE6327X6SA1?
CHIPT0204GUE6327X6SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CHIPT0204GUE6327X6SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CHIPT0204GUE6327X6SA1?
For technical support, including CHIPT0204GUE6327X6SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CHIPT0204GUE6327X6SA1 requirements.
6.How does Aetrix verify that CHIPT0204GUE6327X6SA1 is sourced from the original manufacturer or authorized distributors?
All CHIPT0204GUE6327X6SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CHIPT0204GUE6327X6SA1 meets industry standards.
7.What is the process for return or replacement of CHIPT0204GUE6327X6SA1?
All CHIPT0204GUE6327X6SA1 units undergo pre-shipment inspection (PSI). If there is an issue with CHIPT0204GUE6327X6SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CHIPT0204GUE6327X6SA1 part is unused and in its original packaging.
Return procedure for CHIPT0204GUE6327X6SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CHIPT0204GUE6327X6SA1 Tags
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