onsemi CPH6153-P-TL-E

Overview

CPH6153-P-TL-E from onsemi is a PNP bipolar junction transistor rated for −20 V V_CEO, −3 A I_C, and −195 mV V_CE(sat) at I_C = −1.5 A / I_B = −75 mA, fabricated using MBIT process in ultrasmall CPH6 (SOT-26) package. It serves as a high-current, low-saturation load switch in DC-DC converters and motor drivers.

For engineers reviewing the CPH6153-P-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed IECO reverse-flow prevention, 400 MHz f_T, 1.3 W power dissipation on ceramic substrate, and verified switching performance with t_on = 35 ns / t_f = 12 ns.

Technical Context

This PNP transistor employs onsemi's MBIT process to achieve high current gain (h_FE = 200–560 at V_CE = −2 V, I_C = −100 mA) and fast switching with t_stg = 65 ns and low output capacitance (C_ob = 22 pF at V_CB = −10 V).

It operates within −55°C to +150°C storage range and supports continuous collector current up to −3 A with pulse rating of −5 A, while maintaining guaranteed IECO (emitter-collector off-state current ≤ −1 μA at V_EC = −4.5 V), critical for bidirectional blocking in charger and converter topologies.

Key Specifications

Pinout & Package

CPH6153-P-TL-E is housed in the CPH6 package (JEITA/JEDEC: SC-74, SOT-26, SOT-457), measuring 2.9 × 1.6 × 0.9 mm with 0.95 mm lead pitch and 0.015 g mass. The ultrasmall footprint supports high-density PCB layouts in slim portable electronics.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Compared with MMBT6427LT1G and PN2907A, CPH6153-P-TL-E delivers superior current capacity (−3 A vs. −2 A/−0.6 A), lower V_CE(sat) (−195 mV vs. −200 mV/−1.6 V), and faster switching (t_f = 12 ns), making it uniquely suited for compact, high-efficiency load-switch and motor-drive designs.

Availability

CPH6153-P-TL-E is available at Aetrix Electronics and suitable for smartphone fast charging circuits, USB-C power delivery load switches, and industrial DC-DC converter sync rectifiers requiring stable component supply and Pb-free compliance.

Supply support for CPH6153-P-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, sensors, and discrete devices.

The CPH6153-P-TL-E belongs to onsemi's high-performance PNP bipolar transistor family designed specifically for high-current, low-saturation load switching in portable power systems and motor control.

FAQ

What is the maximum continuous collector current rating for CPH6153-P-TL-E?

The CPH6153-P-TL-E is rated for −3 A continuous collector current (I_C) at T_a = 25°C with proper thermal management. Its pulse rating extends to −5 A for durations <10 μs. This rating assumes mounting on a 600 mm² ceramic substrate; derating applies above 25°C ambient per the PC–Ta curve in the datasheet. CPH6153-P-TL-E maintains stable gain and low saturation voltage across this range.

Does CPH6153-P-TL-E support reverse current blocking in battery applications?

Yes - CPH6153-P-TL-E guarantees IECO ≤ −1 μA at V_EC = −4.5 V, ensuring robust reverse-current blocking from emitter to collector. This specification is explicitly tested and guaranteed, making CPH6153-P-TL-E suitable for USB-C power delivery and smartphone charging circuits where backfeed prevention is mandatory. No external circuitry is required to enforce this behavior.

What is the pin configuration of CPH6153-P-TL-E and how does it affect layout?

CPH6153-P-TL-E uses a 6-pin CPH6 package with pins 1, 2, 5, and 6 as paralleled collectors, pin 3 as base, and pin 4 as emitter. This four-collector arrangement reduces effective on-resistance and improves thermal distribution. Layout must allocate sufficient copper area to all four collector pads and maintain symmetric trace routing to avoid current imbalance. CPH6153-P-TL-E's land pattern is documented in ON Semiconductor's ENA1606A specification.

How does the MBIT process benefit CPH6153-P-TL-E in high-speed switching?

The MBIT (Modified Base Island Technology) process used in CPH6153-P-TL-E yields tight parameter distribution, high h_FE consistency, and reduced base transit time - directly enabling its 400 MHz f_T and 35 ns t_on/12 ns t_f. Unlike conventional processes, MBIT suppresses Kirk effect at high current densities, allowing CPH6153-P-TL-E to sustain fast switching without gain collapse. This is confirmed in the f_T–I_C and switching time test circuits in the datasheet.

Is CPH6153-P-TL-E RoHS and Pb-free compliant?

Yes - CPH6153-P-TL-E is marked "Pb Free" in the ordering information and conforms to RoHS Directive 2011/65/EU. The "-E" suffix in the part number denotes lead-free termination, and the device uses matte tin plating on all external terminals. Full compliance documentation, including substance declarations and test reports, is available through onsemi's quality portal. CPH6153-P-TL-E meets JEDEC J-STD-609 Category 1a for moisture sensitivity (MSL 1).