Toshiba Semiconductor and Storage CRZ10(TE85L,Q,M)

Overview

CRZ10(TE85L,Q,M) from Toshiba is a silicon epitaxial Zener diode designed for voltage regulation and surge absorption in compact surface-mount applications. It delivers a nominal Zener voltage of 10.0 V (9.0–11.0 V range) at 10 mA, with 30 Ω typical Zener impedance, 0.7 W power dissipation, and operates across −40 to +150 °C junction temperature. It is commonly used in power supply feedback loops and overvoltage protection circuits.

For engineers reviewing the CRZ10(TE85L,Q,M) datasheet, CRZ10(TE85L,Q,M) pinout, CRZ10(TE85L,Q,M) application, or CRZ10(TE85L,Q,M) equivalent, key selection criteria include Zener voltage tolerance, thermal derating behavior, reverse leakage at rated voltage, S-FLAT™ package thermal performance, and compatibility with automated reflow assembly on FR-4 PCBs.

Technical Context

The CRZ10(TE85L,Q,M) functions as a two-terminal voltage reference device operating in reverse breakdown mode. Its Zener voltage exhibits a positive temperature coefficient (α_T ≈ +6.0 mV/°C typ.), enabling predictable drift compensation in stable bias networks. The device is optimized for low-current regulation (IZ = 10 mA) and maintains tight voltage control under transient surge conditions due to its 0.7 W average power rating.

Designed for surface-mount use in space-constrained systems, it employs Toshiba's proprietary S-FLAT™ package - a molded, leadless, rectangular outline with cathode marking. Thermal resistance to ambient (r_th(j-a)) depends on PCB land pattern (e.g., 6 mm × 6 mm copper area), and derating guidelines recommend limiting junction temperature to ≤120 °C for high-reliability operation.

Key Specifications

Pinout & Package

Toshiba S-FLAT™ package: leadless, rectangular surface-mount outline (2.8 × 1.2 × 1.2 mm), cathode marked with band on one end. Weight: 0.013 g (typ.). JEDEC and JEITA standards not assigned; Toshiba land pattern code 3-2A1S applies.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Compared with CRZ10(TE85L,Q,M), BZX84-C10LT1G offers tighter voltage tolerance and smaller size but sacrifices 57% power handling and requires stricter thermal design; MMBZ5240BLT1G provides lower impedance and tighter tolerance but introduces opposite temperature drift behavior, demanding redesign of temperature-compensated references.

Availability

CRZ10(TE85L,Q,M) is available at Aetrix Electronics and suitable for industrial power supplies, automotive body electronics, and sensor interface modules requiring stable component supply and long-term manufacturability.

Supply support for CRZ10(TE85L,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for industrial, automotive, and consumer applications.

The CRZ10(TE85L,Q,M) belongs to Toshiba's CRY/CRZ series of silicon Zener diodes, engineered specifically for reliable voltage regulation and transient suppression in compact, surface-mount power management circuits.

FAQ

What is the Zener voltage tolerance of CRZ10(TE85L,Q,M) at 25°C?

The CRZ10(TE85L,Q,M) has a Zener voltage range of 9.0 V to 11.0 V at 10 mA test current and 25°C ambient, corresponding to ±10% tolerance around the nominal 10.0 V rating. This tolerance is confirmed in the Electrical Characteristics table on page 2 of the official Toshiba CRY62–CRZ39 datasheet. The CRZ10(TE85L,Q,M) achieves this specification using silicon epitaxial process technology and is binned accordingly during final test.

Does CRZ10(TE85L,Q,M) support reflow soldering, and what is its maximum peak temperature?

Yes, CRZ10(TE85L,Q,M) is qualified for lead-free reflow soldering per J-STD-020. Its S-FLAT™ package supports peak temperatures up to 260°C for ≤10 seconds. The device must be stored per MSL level 1 requirements, and the recommended land pattern (6 mm × 6 mm copper pad) ensures adequate heat dissipation during reflow. CRZ10(TE85L,Q,M) has been validated for compatibility with standard FR-4 PCBs using Type 3 solder paste.

What is the maximum non-repetitive peak reverse power (PRSM) for CRZ10(TE85L,Q,M)?

The CRZ10(TE85L,Q,M) supports up to 38 W of non-repetitive peak reverse power for 1 ms pulse width, as shown in the PRSM–t_W graph on page 4 of the Toshiba datasheet. This value assumes mounting on a glass-epoxy board with 6 mm × 6 mm solder land. For longer pulses or higher repetition rates, derating per the transient thermal impedance curve (r_th(j-a)–t) is required to maintain T_j ≤ 150°C.

Is CRZ10(TE85L,Q,M) RoHS compliant and halogen-free?

Yes, CRZ10(TE85L,Q,M) complies with EU RoHS Directive 2011/65/EU and is halogen-free per Toshiba's environmental specifications. The device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE). Full material declarations and compliance certificates are available upon request from Aetrix Electronics for CRZ10(TE85L,Q,M).

How does the temperature coefficient of CRZ10(TE85L,Q,M) affect its regulation accuracy over temperature?

The CRZ10(TE85L,Q,M) has a typical temperature coefficient (α_T) of +6.0 mV/°C, meaning its Zener voltage increases by ~6 mV per degree Celsius rise in junction temperature. Over a −40 to +125°C range, this results in ~1.0 V total drift. For precision applications, this drift must be compensated-e.g., by pairing with a negative-tempco component or using system-level calibration. CRZ10(TE85L,Q,M)'s predictable α_T enables such compensation.