Toshiba Semiconductor and Storage CRZ11(TE85L,Q)

Overview

CRZ11(TE85L,Q) from Toshiba is a silicon epitaxial Zener diode designed for voltage regulation and surge absorption in compact SMT applications. It delivers a nominal Zener voltage of 11.0 V (min 10.8 V, max 13.2 V) at 10 mA test current, with 30 Ω typical Zener impedance, 0.7 W power dissipation, and operates across −40°C to +150°C junction temperature range.

For engineers reviewing the CRZ11(TE85L,Q) datasheet, CRZ11(TE85L,Q) pinout, CRZ11(TE85L,Q) application, or CRZ11(TE85L,Q) equivalent, key selection criteria include Zener voltage tolerance, thermal stability (α_T = ±2.5 mV/°C typ.), low reverse leakage (<10 μA at 9.0 V), S-FLAT™ package compatibility, and suitability for overvoltage clamping in power supply rails and I/O protection circuits.

Technical Context

The CRZ11(TE85L,Q) functions as a precision shunt regulator with stable breakdown behavior under DC and transient reverse bias. Its 11.0 V nominal Zener voltage is specified at 10 mA, with tight ±10% tolerance (10.8–13.2 V), and exhibits low dynamic impedance (≤30 Ω) ensuring minimal voltage deviation under load variation.

Designed for surface-mount assembly in space-constrained systems, it uses Toshiba's proprietary S-FLAT™ package - a 2.8 mm × 1.2 mm × 1.2 mm molded leadless structure with cathode marking. Thermal performance is validated up to 150°C junction temperature, with derating guidance recommending operation below 120°C for high-reliability designs.

Key Specifications

Pinout & Package

CRZ11(TE85L,Q) is housed in Toshiba's S-FLAT™ package (JEITA package code 3-2A1S), a 2-terminal surface-mount device with anode and cathode on opposite ends of a 2.8 mm × 1.2 mm body. Cathode is marked by a band on the top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with CRZ11(TE85L,Q), MMBZ5240BS-7-F offers tighter voltage tolerance but only half the power handling, while BZX84-C11 provides greater surge robustness in a larger package-neither is pin-compatible, requiring land pattern revision for substitution.

Availability

CRZ11(TE85L,Q) is available at Aetrix Electronics and suitable for industrial power supplies, telecom interface protection, automotive body electronics, and medical sensor modules requiring stable component supply and long-lifecycle support.

Supply support for CRZ11(TE85L,Q) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in discrete devices, power electronics, and logic ICs for industrial, automotive, and consumer applications.

The CRZ11(TE85L,Q) belongs to Toshiba's CRY62–CRZ39 Zener diode family, engineered for compact, high-reliability voltage regulation and surge suppression in surface-mount power management and interface circuits.

FAQ

What is the Zener voltage specification for CRZ11(TE85L,Q)?

The CRZ11(TE85L,Q) has a Zener voltage range of 10.8 V to 13.2 V at 10 mA test current, with a nominal value of 11.0 V. This tolerance reflects ±10% variation across production lots and ensures predictable clamping behavior in overvoltage protection circuits. The CRZ11(TE85L,Q) achieves this specification using Toshiba's silicon epitaxial process, which delivers stable breakdown characteristics across temperature and aging conditions.

What package type does CRZ11(TE85L,Q) use?

CRZ11(TE85L,Q) uses Toshiba's proprietary S-FLAT™ package (JEITA code 3-2A1S), measuring 2.8 mm × 1.2 mm × 1.2 mm with a leadless molded construction. The cathode is marked by a band on the top surface, and the device mounts directly onto PCB pads without leads. This package enables high-density placement and thermal conduction through the bottom surface, supporting the CRZ11(TE85L,Q)'s 0.7 W power rating when used with appropriate copper area.

What is the maximum reverse leakage current for CRZ11(TE85L,Q)?

The CRZ11(TE85L,Q) specifies a maximum reverse leakage current of 10 μA at 9.0 V applied reverse voltage, measured at 25°C. This low leakage ensures minimal parasitic loading in high-impedance reference or sensing nodes. At elevated temperatures or higher voltages, leakage increases predictably-designers should verify operation at worst-case conditions using the CRZ11(TE85L,Q)'s published derating curves and thermal resistance data.

Can CRZ11(TE85L,Q) be used for surge protection?

Yes, CRZ11(TE85L,Q) is explicitly designated as a surge absorber in Toshiba's documentation. It supports non-repetitive peak reverse power dissipation (PRSM) up to 38 W for 1 ms pulses, making it suitable for transient voltage suppression in RS-485, CAN, and DC power interfaces. Its fast response and stable Zener characteristic allow the CRZ11(TE85L,Q) to clamp surges without latch-up or parameter shift, provided thermal limits are respected per the PRSM–t_W curve.

What is the temperature coefficient of CRZ11(TE85L,Q)?

The CRZ11(TE85L,Q) has a typical temperature coefficient (α_T) of ±2.5 mV/°C, meaning its Zener voltage shifts approximately ±2.5 mV per degree Celsius change in junction temperature. This value is derived from the device's epitaxial structure and enables predictable drift modeling in reference designs. For applications requiring tighter thermal stability, the CRZ11(TE85L,Q)'s coefficient must be factored into total error budgets alongside initial tolerance and long-term drift.