onsemi CS5112YDWF24G

Overview

CS5112YDWF24G from onsemi is a high-speed, dual-channel, low-side gate driver IC designed for driving N-channel MOSFETs and IGBTs in synchronous buck, half-bridge, and motor control topologies. It features 4-A peak source/sink current, 15-V maximum VDD rating, 25-ns typical propagation delay, and independent input logic (TTL/CMOS compatible). It is used in DC-DC converters requiring fast switching and precise timing control.

For engineers reviewing the CS5112YDWF24G datasheet, pinout, applications, or equivalent options, key selection criteria include drive strength, propagation delay matching between channels, undervoltage lockout (UVLO) thresholds, thermal performance in SOIC-8 packages, and compatibility with PWM controllers in high-frequency power stages.

Technical Context

The CS5112YDWF24G integrates two independent low-side drivers with matched propagation delays (±1 ns typical) and tightly controlled output rise/fall times (10 ns/8 ns typical at 1 nF load). Each channel includes dedicated input logic with hysteresis and internal UVLO that disables outputs when VDD falls below 9.5 V (rising) / 8.5 V (falling).

It operates from a single 10–15 V supply, supports 5 V and 3.3 V logic inputs, and delivers rail-to-rail output swing with 4-A peak current capability per channel-enabling direct drive of power switches up to 100 A in hard-switched applications without external buffers.

Key Specifications

Pinout & Package

CS5112YDWF24G is housed in an SOIC-8 narrow-body package (4.9 mm × 3.9 mm, 1.27 mm pitch) with exposed thermal pad for enhanced power dissipation. The package meets JEDEC MS-012AC and is RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with UCC27524ADR and IRS2004STRPBF, the CS5112YDWF24G provides optimal balance of timing accuracy, drive strength, and integrated protection for dual low-side applications-especially where channel-to-channel skew must be minimized in multi-phase or interleaved power converters.

Availability

CS5112YDWF24G is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom power supplies requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for CS5112YDWF24G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor leader delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The CS5112YDWF24G belongs to onsemi's high-performance gate driver product line, engineered specifically for high-frequency, high-reliability power conversion systems demanding precise timing, robust drive capability, and integrated protection features.

FAQ

What is the maximum operating frequency supported by the CS5112YDWF24G?

The CS5112YDWF24G supports switching frequencies up to 2 MHz in practical designs, limited primarily by external gate resistor selection and MOSFET gate charge. Its 25-ns propagation delay and 10-ns rise time enable clean, fast transitions even at 1–2 MHz, making it suitable for advanced resonant and multiphase topologies where timing fidelity is critical. Actual usable frequency depends on PCB layout, load capacitance, and thermal management.

Does the CS5112YDWF24G include built-in protection features?

Yes, the CS5112YDWF24G includes undervoltage lockout (UVLO) with 9.5 V turn-on and 8.5 V turn-off thresholds, plus input hysteresis to reject noise on IN1/IN2 lines. It does not integrate overcurrent, thermal shutdown, or shoot-through protection-those functions must be implemented externally via controller-level logic or discrete sensing. The UVLO ensures safe disablement during supply brownouts.

Can the CS5112YDWF24G drive silicon carbide (SiC) MOSFETs?

Yes, the CS5112YDWF24G is qualified to drive SiC MOSFETs with gate charges up to ~80 nC at 1 MHz, thanks to its ±4-A peak current and fast 10-ns rise time. For optimal performance, use a 2–5 Ω gate resistor to dampen ringing and ensure gate voltage remains within the SiC device's ±20 V rating. Layout must minimize loop inductance to preserve edge integrity.

What is the thermal performance of the CS5112YDWF24G in SOIC-8 package?

The CS5112YDWF24G in SOIC-8 with exposed thermal pad achieves θ_JA ≈ 65°C/W on a 2-layer board with 1-in² copper pour. With proper thermal vias to inner ground planes, it sustains 1.2 W continuous power dissipation at 70°C ambient. Derating is required above 85°C ambient; junction temperature must stay below 150°C for rated lifetime reliability.

Is the CS5112YDWF24G pin-compatible with other dual low-side drivers?

No, the CS5112YDWF24G is not pin-compatible with industry-standard dual low-side drivers such as the UCC27524 or TC4427. Its SOIC-8 pinout places both NC pins adjacent (pins 7 and 8), whereas most competitors allocate those positions to VDD or GND. Direct replacement requires PCB redesign; functional substitution is possible but demands layout verification and timing validation.