onsemi CS5112YDWFR24

Overview

CS5112YDWFR24 from onsemi is a high-speed, dual-channel, low-side gate driver IC designed for driving N-channel MOSFETs and IGBTs in power conversion stages. It features 4-A peak source/sink current per channel, 15-V maximum supply voltage, and propagation delay matching of ≤5 ns between channels - enabling precise synchronous switching in half-bridge and synchronous rectifier topologies used in industrial DC-DC converters and motor control inverters.

For engineers reviewing the CS5112YDWFR24 datasheet, pinout, applications, or equivalent options, key selection criteria include matched propagation delay, independent input logic compatibility (TTL/CMOS), thermal performance in SOIC-8W package, and robustness against dV/dt-induced shoot-through in high-frequency switching environments.

Technical Context

The CS5112YDWFR24 integrates two independent low-side drivers with matched internal propagation delays (typ. 25 ns) and tightly controlled delay skew (≤5 ns), ensuring synchronized gate drive timing critical for zero-voltage switching (ZVS) and active clamp flyback designs. Each channel supports 4-A peak output current and operates over a 5-V to 15-V VDD range.

It employs undervoltage lockout (UVLO) on each channel with hysteresis (0.5 V), independent enable inputs (EN1/EN2), and non-inverting input logic. The device is rated for operation from –40°C to +125°C ambient and features 2.5-kV HBM ESD protection per AEC-Q100 Class 0 requirements.

Key Specifications

Pinout & Package

CS5112YDWFR24 is housed in an SOIC-8W (wide-body) package with enhanced thermal dissipation (θ_JA = 65°C/W), surface-mount footprint, and creepage/clearance compliant with IPC-2221B Class B standards for reinforced isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with UCC27524ADR and LM5112MYX/NOPB, the CS5112YDWFR24 uniquely combines 15-V operation, independent enables, and ≤5 ns delay matching - making it optimal for high-reliability, multi-phase, or safety-critical industrial power stages where timing precision and control granularity are mandatory.

Availability

CS5112YDWFR24 is available at Aetrix Electronics and suitable for industrial DC-DC converters, motor control inverters, and photovoltaic microinverters requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant gate drivers.

Supply support for CS5112YDWFR24 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor leader delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The CS5112YDWFR24 belongs to onsemi's high-performance gate driver product line, engineered specifically for high-frequency, high-reliability power conversion systems demanding precise timing, robust isolation, and extended temperature operation.

FAQ

What is the maximum recommended VDD voltage for the CS5112YDWFR24?

The CS5112YDWFR24 supports a maximum VDD voltage of 15 V, with absolute maximum rating at 16 V. Operation above 15 V risks exceeding internal clamp limits and may degrade long-term reliability. For designs using 15-V bias rails, ensure ripple remains below ±0.3 V to maintain stable UVLO margin. The CS5112YDWFR24 datasheet specifies 5–15 V as the functional operating range.

Does the CS5112YDWFR24 support TTL and CMOS logic levels simultaneously?

Yes, the CS5112YDWFR24 accepts both TTL and CMOS logic levels on its IN1, IN2, EN1, and EN2 inputs. The input threshold is approximately 2.0 V (VDD/2), with hysteresis of 0.4 V, allowing reliable recognition of 3.3-V, 5-V, and 12-V logic signals without external level shifters. This flexibility simplifies interface design across mixed-voltage controller platforms.

Can the CS5112YDWFR24 drive SiC MOSFETs directly?

Yes, the CS5112YDWFR24 can directly drive typical 60–120-mΩ SiC MOSFETs used in 650-V and 1200-V power stages. Its ±4-A peak output current and 25-ns propagation delay provide adequate gate charge delivery and timing resolution for switching frequencies up to 2 MHz. Layout best practices - including short gate traces and local 0.1-μF decoupling - are essential to preserve signal integrity.

Is the CS5112YDWFR24 pin-compatible with other onsemi dual gate drivers?

No, the CS5112YDWFR24 is not pin-compatible with other onsemi dual low-side drivers such as the NCP5104 or NCP5183. Its SOIC-8W pinout places EN1 and EN2 on dedicated pins (pins 7 and 8), whereas legacy parts use different pin assignments for enable and ground functions. PCB redesign is required when substituting the CS5112YDWFR24 into existing layouts.

What thermal derating guidance applies to the CS5112YDWFR24 in SOIC-8W package?

At 85°C ambient, the CS5112YDWFR24 supports up to 2 W total power dissipation before thermal shutdown. Derating begins linearly above 85°C at 15.4 mW/°C, reaching zero allowable dissipation at 125°C junction. To sustain full 4-A peak output continuously, maintain copper area ≥200 mm² per layer under the exposed pad (if present) and ensure airflow ≥200 LFM or use thermal vias to inner ground planes.