Infineon Technologies CY14B101LA-SP25XI

Overview

CY14B101LA-SP25XI from Infineon Technologies (formerly Cypress) is a 1-Mbit nonvolatile SRAM (nvSRAM) with QuantumTrap technology, organized as 128 K × 8, 25 ns access time, single 3.0 V (–10% to +20%) supply, and industrial temperature range (–40°C to +85°C). It performs automatic STORE on power-down using an external VCAP capacitor and supports software/hardware-controlled STORE/RECALL for data retention in mission-critical embedded systems.

For engineers reviewing the CY14B101LA-SP25XI datasheet, CY14B101LA-SP25XI pinout, CY14B101LA-SP25XI application, or CY14B101LA-SP25XI equivalent, key selection considerations include AutoStore timing dependency on VCAP capacitance, HSB-driven hardware STORE arbitration, ×8 vs ×16 configuration pin compatibility, and 1 million STORE endurance versus infinite SRAM read/write cycles.

Technical Context

This nvSRAM integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling simultaneous STORE/RECALL across all 131,072 bytes. The architecture decouples volatile operation from nonvolatile persistence: SRAM supports standard read/write timing (tAA = 25 ns), while STORE/RECALL execute in dedicated cycles that inhibit concurrent SRAM access.

AutoStore triggers when VCC falls below VSWITCH (2.7 V min), disconnecting VCAP from VCC and using stored charge to complete a full-cell STORE. Hardware STORE is initiated by pulling HSB low, and software STORE uses a specific address sequence - both bypass AutoStore's write-activity precondition, unlike power-loss-triggered STORE.

Key Specifications

Pinout & Package

Package: 32-pin Small Outline Integrated Circuit (SOIC), body width 300 mil, RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with FM24V10-G and AS1C1M816A-25BIN, CY14B101LA-SP25XI delivers pin-compatible parallel SRAM performance with deterministic AutoStore timing, eliminating both battery management overhead and serial protocol translation - critical for real-time deterministic systems.

Availability

CY14B101LA-SP25XI is available at Aetrix Electronics and suitable for industrial PLC data logging, smart meter firmware state backup, and railway signaling controller state save requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY14B101LA-SP25XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains the nvSRAM portfolio under its Industrial & Power Control division, focusing on high-reliability memory for mission-critical infrastructure.

CY14B101LA-SP25XI belongs to the QuantumTrap nvSRAM product line, engineered specifically for applications demanding zero-data-loss power failure response without batteries or external controllers.

FAQ

What capacitor value and type is required on the VCAP pin for reliable AutoStore operation?

A 4.7 µF tantalum capacitor with ≤1 Ω ESR is required per the datasheet. Ceramic capacitors are unsuitable due to insufficient charge storage and higher leakage. The capacitor must be placed within 5 mm of the VCAP pin with low-inductance routing to ensure ≥20 ms STORE duration at –40°C. Failure to meet this spec risks incomplete STORE and data corruption.

Can CY14B101LA-SP25XI be used in a ×16 configuration?

No - CY14B101LA is strictly a 128 K × 8 device. The ×16 variant is CY14B101NA, which uses different pinouts (BHE/BLE present, no A16) and package options. Pin-for-pin substitution is not possible; design must match the LA suffix's ×8 organization and associated address/data mapping.

How does the HSB pin behave during a Software STORE versus an AutoStore cycle?

HSB goes LOW only during Hardware STORE and AutoStore - it remains HIGH during Software STORE. During AutoStore, HSB asserts LOW after VCC drops below VSWITCH and stays LOW for tSTORE (max 20 ms). During Hardware STORE, HSB is driven LOW externally and the device responds by asserting HSB LOW internally for the same duration.

Is the 25 ns access time guaranteed across the full industrial temperature range?

Yes - the 25 ns tAA (address access time) is specified from –40°C to +85°C at VCC = 2.7 V to 3.6 V. This is verified per JEDEC JESD22-A108 stress testing and includes margin for process variation. No derating is required for industrial operation, unlike many competing nvSRAMs that specify speed only at 25°C.