Infineon Technologies CY14B101LA-SZ25XI

Overview

CY14B101LA-SZ25XI from Infineon Technologies (formerly Cypress) is a 1-Mbit nonvolatile SRAM (nvSRAM) with QuantumTrap technology, organized as 128 K × 8, 25 ns access time, single 3.0 V (+20%/–10%) supply, and industrial temperature range (–40°C to +85°C). It performs automatic STORE on power-down using an external VCAP capacitor and supports software- or hardware-triggered STORE/RECALL for data retention in mission-critical embedded control and metering systems.

For engineers reviewing the CY14B101LA-SZ25XI datasheet, CY14B101LA-SZ25XI pinout, CY14B101LA-SZ25XI application, or CY14B101LA-SZ25XI equivalent, key selection criteria include AutoStore reliability under brownout, infinite SRAM read/write endurance, 20-year nonvolatile data retention, and compatibility with legacy SRAM interfaces without firmware redesign.

Technical Context

This nvSRAM integrates a standard fast SRAM array (1024 × 1024) with parallel QuantumTrap nonvolatile storage cells-each cell retains data independently without wear leveling or ECC overhead. STORE and RECALL execute in parallel across all memory locations, eliminating block erase delays.

AutoStore is initiated autonomously when VCC drops below VSWITCH (2.7 V min), drawing energy from the VCAP capacitor (typ. 4.7 µF) to complete a full 128-Kbyte STORE in ≤20 ms. Hardware STORE is triggered by pulling HSB low, while software STORE uses a specific address write sequence-both bypass AutoStore inhibition logic that prevents redundant stores after writes.

Key Specifications

Pinout & Package

Package: 32-pin SOIC (Small Outline Integrated Circuit), RoHS-compliant, body width 7.5 mm, lead pitch 1.27 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with FM24V10-G and AS1C1M816A-25TIN, CY14B101LA-SZ25XI delivers true SRAM timing, capacitor-based hands-off power-loss protection, and seamless drop-in replacement-making it optimal for retrofitting legacy SRAM designs with nonvolatility without firmware or layout changes.

Availability

CY14B101LA-SZ25XI is available at Aetrix Electronics and suitable for smart metering, industrial PLCs, railway signaling controllers, and medical diagnostic equipment requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant sourcing.

Supply support for CY14B101LA-SZ25XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains the full nvSRAM portfolio, delivering high-reliability memory solutions for industrial, automotive, and infrastructure markets.

CY14B101LA belongs to the QuantumTrap nvSRAM product line, engineered specifically for applications demanding battery-free, deterministic nonvolatile storage in harsh power environments-such as utility metering, factory automation, and safety-critical control systems.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B101LA-SZ25XI requires a minimum 4.7 µF capacitor on the VCAP pin, rated for ≥6.3 V and low ESR (<2 Ω). Tantalum or X7R ceramic capacitors meet this specification. Using less capacitance risks incomplete STORE during rapid VCC collapse, potentially corrupting stored data. The device's internal regulator charges VCAP to ~2.5 V during normal operation.

Can CY14B101LA-SZ25XI be used as a direct replacement for standard 128-Kbyte SRAMs?

Yes-CY14B101LA-SZ25XI uses identical pinout, timing, and electrical characteristics as standard 128 K × 8 SRAMs (e.g., IS61LV12816). All control signals (CE, OE, WE), address (A0–A16), and data (DQ0–DQ7) match. No firmware or PCB changes are needed; only addition of the VCAP capacitor is required to enable nonvolatility.

How does the HSB pin function during AutoStore and Hardware STORE?

HSB serves dual roles: as an open-drain status output (driven LOW during any STORE operation) and as a hardware trigger input (pulled LOW externally to initiate STORE). During AutoStore, HSB goes LOW automatically at VCC collapse and remains LOW until STORE completes (~20 ms). For Hardware STORE, HSB must be held LOW for ≥100 ns to latch the request.

Is software STORE affected by the AutoStore inhibition logic?

No-software STORE (initiated via address-based command sequence) executes unconditionally, regardless of whether recent SRAM writes occurred. In contrast, AutoStore and Hardware STORE are inhibited unless at least one write has taken place since the last STORE or RECALL cycle, preventing unnecessary nonvolatile writes during idle periods.