Infineon Technologies CY14B101LA-SZ45XI
- Part No.:
- CY14B101LA-SZ45XI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 32-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
CY14B101LA-SZ45XI.pdf
- Description:
- IC NVSRAM 1MBIT PARALLEL 32SOIC
- Quantity:
- Payment:

- Shipping:

Inventory:4,612
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Product details
Overview
CY14B101LA-SZ45XI from Infineon Technologies (formerly Cypress) is a 1-Mbit nonvolatile SRAM (nvSRAM) with QuantumTrap technology, organized as 128 K × 8, 45 ns access time, single 3.0 V (–10% to +20%) supply, and industrial temperature range (–40°C to +85°C). It performs automatic STORE on power-down using an external VCAP capacitor and supports software- or hardware-initiated STORE/RECALL cycles for mission-critical data retention in embedded control systems.
For engineers reviewing the CY14B101LA-SZ45XI datasheet, CY14B101LA-SZ45XI pinout, CY14B101LA-SZ45XI application, or CY14B101LA-SZ45XI equivalent, key selection criteria include AutoStore timing compliance, VCAP capacitor sizing, HSB signal handling during power transition, and ×8 bus interface compatibility with legacy 8-bit microcontrollers and FPGA glue logic.
Technical Context
This nvSRAM integrates standard fast SRAM array (1024 × 1024) with parallel QuantumTrap nonvolatile storage cells per bit. All 131,072 bytes are stored or recalled simultaneously - no block addressing or page management required. The architecture eliminates firmware overhead for data persistence while maintaining SRAM-like random-access performance.
STORE is triggered by VCC drop below VSWITCH (2.5 V typ.), initiating autonomous transfer from SRAM to QuantumTrap using charge stored on VCAP. RECALL occurs automatically at power-up, restoring full memory contents before system initialization completes. HSB provides real-time hardware status signaling for external coordination of critical operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Mbit (131,072 × 8 bits), fully random-access SRAM with integrated nonvolatile backup |
| Access Time | 45 ns - defines maximum clock rate for synchronous read/write interfacing with 8-bit MCUs or FPGAs |
| Supply Voltage | 3.0 V ±10% to +20% - compatible with industrial 3.3 V rails without regulation; tolerates brown-out down to 2.7 V |
| Data Retention | 20 years at +85°C - enables long-term deployment in unattended infrastructure without battery or EEPROM refresh |
| STORE Endurance | 1 million cycles - sufficient for daily power-cycle applications over 27 years |
| Operating Temp | –40°C to +85°C - qualified for industrial automation, metering, and transportation control environments |
| VSWITCH | 2.5 V (typ.) - precise threshold triggering AutoStore before system logic fails, ensuring deterministic save point |
Pinout & Package
Package: 32-pin Small Outline Integrated Circuit (SOIC), 300 mil width, RoHS-compliant, lead-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | Selects one of 131,072 × 8-bit locations; A16 used only in ×8 mode; unused pins are NC in ×16 config |
| DQ0–DQ7 | Bidirectional Data I/O | 8-bit parallel data path; tristated when OE HIGH or during STORE/RECALL to prevent bus contention |
| CE, OE, WE | Control Inputs (Active LOW) | Standard SRAM control triad; CE enables chip, OE enables outputs, WE gates write - all must meet timing tAA/tWC |
| VCAP | AutoStore Capacitor Terminal | Connects external 4.7 µF tantalum or 10 µF ceramic capacitor; supplies energy for full 1-Mbit STORE during VCC collapse |
| HSB | Hardware STORE Busy | Open-drain output signals STORE progress (LOW); also accepts external LOW pulse to initiate hardware STORE |
| VCC / VSS | Power / Ground | Single 3 V supply; VSS must be low-inductance connection to minimize noise coupling into sensitive QuantumTrap circuitry |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap Nonvolatile Cell | Embedded per-bit nonvolatile storage enabling infinite SRAM reads/writes plus 1M STORE cycles without wear leveling or ECC overhead |
| AutoStore on Power Loss | Self-triggered at VCC < 2.5 V using VCAP-supplied energy - requires no host intervention or firmware polling |
| Hardware STORE Initiation | HSB pin allows external controller to force immediate STORE independent of VCC slope or timing uncertainty |
| Software STORE/RECALL | Address-based command sequence enables precise, deterministic save/restore points within application runtime |
| Industrial Temperature Range | Validated operation from –40°C to +85°C ensures reliability in harsh environments without derating or thermal management |
Applications
| Industrial PLC Data Logging | Smart Meter Firmware State Backup |
|---|---|
Use Scenario: Retaining last-known operational state, sensor calibration values, and event counters during unexpected AC mains loss in programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing zero-latency read/write access during normal operation and atomic STORE at power-fail boundary. Use Value: Eliminates need for external EEPROM write cycles and battery-backed RAM, reducing BOM cost and failure modes while guaranteeing data integrity across >1M power cycles. | Use Scenario: Preserving tariff tables, tamper-event timestamps, and accumulated kWh readings during utility grid outages in ANSI C12.20-compliant electricity meters. IC Role / Device Role / Timing Role: Primary data retention element synchronized to metering SoC's power-loss detection interrupt via HSB handshake. Use Value: Meets ANSI/IEC data retention requirements for 20 years without volatile backup, avoiding lithium battery leakage and regulatory re-certification. |
| Railway Signaling Controller Memory | Medical Diagnostic Equipment Configuration Store |
Use Scenario: Holding interlocking logic states and route authorization flags in EN 5012x-certified signaling systems where power interruption must not corrupt safety-critical memory. IC Role / Device Role / Timing Role: Fail-safe memory buffer that guarantees STORE completion before VCC drops below 2.5 V, verified by HSB assertion. Use Value: Enables SIL-3 compliant design by removing reliance on external watchdogs or redundant power supplies for memory persistence. | Use Scenario: Storing user-defined imaging parameters, calibration coefficients, and service history logs in portable ultrasound and MRI subsystems subject to frequent power cycling. IC Role / Device Role / Timing Role: High-reliability configuration store interfaced directly to ARM Cortex-M7 MCU via 8-bit parallel bus with no driver IC. Use Value: Reduces boot time by eliminating post-power-up EEPROM read sequences; supports field-upgradable calibration without service downtime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM24V10-G | 1-Mbit F-RAM (45 ns), 2.7–3.6 V, no VCAP required, unlimited endurance | No power-loss timing dependency; no STORE latency; lower write current but higher standby current | Preferred where deterministic STORE timing is impractical or VCAP layout space is constrained |
| MB85RS1MT-FPN-GE1 | 1-Mbit FRAM (25 ns), 1.8–3.6 V, SPI interface, no VCAP, 1014 endurance | Serial interface reduces pin count but adds protocol overhead; lacks parallel bus compatibility and HSB signaling | Selected when board space is limited and MCU supports SPI; unsuitable for direct SRAM replacement |
Compared with FM24V10-G and MB85RS1MT-FPN-GE1, CY14B101LA-SZ45XI delivers true SRAM timing transparency, hardware STORE arbitration via HSB, and seamless ×8 bus integration - making it optimal for retrofitting legacy 8-bit designs requiring guaranteed power-fail data capture without firmware changes.
Availability
CY14B101LA-SZ45XI is available at Aetrix Electronics and suitable for industrial PLC data logging, smart meter firmware state backup, and railway signaling controller memory requiring stable component supply across extended product lifecycles.
Supply support for CY14B101LA-SZ45XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power systems, sensors, and memory solutions for industrial, automotive, and IoT applications.
CY14B101LA-SZ45XI belongs to Infineon's nvSRAM product line, engineered specifically for deterministic, battery-free data retention in mission-critical embedded systems where power integrity cannot be assumed.
FAQ
What capacitor value and type is required for reliable AutoStore operation?
A 4.7 µF solid tantalum capacitor (±20% tolerance, 6.3 V rating) or 10 µF X5R/X7R ceramic capacitor must be placed between VCAP and VSS, within 5 mm of the package. Tantalum offers superior energy density and low ESR for consistent 45 ns STORE timing; ceramic requires larger footprint but avoids MnO2 ignition risk. Both must meet DC bias derating per datasheet Figure 4.
How does the HSB pin function during power-up and power-down sequences?
At power-up, HSB is driven HIGH for tHHHD (100 ns max) then weakly pulled HIGH internally; external pull-up is optional. During power-down, HSB goes LOW when AutoStore initiates and remains LOW until STORE completes (~1 ms). If HSB is externally pulled LOW, it triggers immediate Hardware STORE - but only if at least one write occurred since last RECALL.
Can CY14B101LA-SZ45XI be used as a drop-in replacement for standard SRAMs?
Yes - pinout and timing are SRAM-compatible: identical A0–A16, DQ0–DQ7, CE/OE/WE, and VCC/VSS placement. However, VCAP must be populated and HSB monitored or tied HIGH if unused. No firmware changes needed for basic read/write, but leveraging AutoStore requires power-fail detection circuitry or HSB polling in host code.
What is the minimum VCC voltage at which RECALL completes successfully?
RECALL completes reliably down to VCC = 2.2 V, as specified in DC Electrical Characteristics Table 9. Below this, internal voltage regulators cannot sustain QuantumTrap cell readout margin. System designers must ensure power supply hold-up time exceeds tRC (max 10 ms) at 2.2 V to guarantee full 131,072-byte restoration before reset assertion.
CY14B101LA-SZ45XI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 32-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOIC
CY14B101LA-SZ45XI FAQ
1.How can I place an order for CY14B101LA-SZ45XI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B101LA-SZ45XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B101LA-SZ45XI reliable?
The price and inventory of CY14B101LA-SZ45XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B101LA-SZ45XI is usually 5 days.
3.What payment methods are accepted for CY14B101LA-SZ45XI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B101LA-SZ45XI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B101LA-SZ45XI?
CY14B101LA-SZ45XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B101LA-SZ45XI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B101LA-SZ45XI?
For technical support, including CY14B101LA-SZ45XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B101LA-SZ45XI requirements.
6.How does Aetrix verify that CY14B101LA-SZ45XI is sourced from the original manufacturer or authorized distributors?
All CY14B101LA-SZ45XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B101LA-SZ45XI meets industry standards.
7.What is the process for return or replacement of CY14B101LA-SZ45XI?
All CY14B101LA-SZ45XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14B101LA-SZ45XI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B101LA-SZ45XI part is unused and in its original packaging.
Return procedure for CY14B101LA-SZ45XI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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