Infineon Technologies CY14B101LA-ZS25XI
- Part No.:
- CY14B101LA-ZS25XI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY14B101LA-ZS25XI.pdf
- Description:
- IC NVSRAM 1MBIT PAR 44TSOP II
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY14B101LA-ZS25XI from Infineon Technologies (formerly Cypress) is a 1-Mbit nonvolatile SRAM (nvSRAM) with QuantumTrap technology, organized as 128 K × 8, 25 ns access time, single 3.0 V ±10% supply, and industrial temperature range (–40°C to +85°C). It performs automatic STORE on power-down using an external VCAP capacitor and supports software- or hardware-triggered STORE/RECALL operations in embedded systems requiring persistent memory without battery backup.
For engineers reviewing the CY14B101LA-ZS25XI datasheet, CY14B101LA-ZS25XI pinout, CY14B101LA-ZS25XI application, or CY14B101LA-ZS25XI equivalent, key selection considerations include AutoStore timing dependency on VCAP capacitance, HSB pin behavior during hardware STORE, ×8 vs ×16 configuration compatibility, and QuantumTrap endurance limits (1 million STORE cycles, 20-year data retention).
Technical Context
This nvSRAM integrates standard SRAM cells with parallel-connected QuantumTrap nonvolatile elements per cell, enabling simultaneous STORE/RECALL across all 131,072 bytes. The architecture decouples volatile read/write (infinite cycles) from nonvolatile STORE (1M cycles) and RECALL (infinite), with internal power switching between VCC and VCAP during brownout.
AutoStore activation occurs when VCC drops below VSWITCH (2.2 V typ.), triggering internal disconnection of VCAP from VCC and initiating STORE using stored charge. Hardware STORE is initiated by driving HSB low, while software STORE uses a specific address write sequence; both inhibit SRAM access until completion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Mbit (128 K × 8 organization) |
| Access Time | 25 ns - defines maximum clock-to-data delay for synchronous interface timing budgets |
| Supply Voltage | 3.0 V ±10% - requires stable 2.7–3.6 V rail; no separate VIO or core voltage rails |
| Data Retention | 20 years at +85°C - specifies minimum nonvolatile data hold time under worst-case thermal stress |
| STORE Endurance | 1 million cycles - limits total number of STORE operations before QuantumTrap wear-out |
| Operating Temp | –40°C to +85°C - qualifies for industrial-grade deployment without derating |
| VCAP Capacitance | 4.7 µF ±20% tantalum - minimum value required to guarantee STORE completion at VCC = 2.7 V |
Pinout & Package
Package: 32-pin Small Outline Integrated Circuit (SOIC), RoHS-compliant, body width 300 mil, lead pitch 1.27 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Input | 17-bit address bus for ×8 mode; A16 unused in ×16 config but present on die |
| DQ0–DQ7 | Bidirectional Data I/O | 8-bit parallel data path; tristated when OE HIGH or during STORE/RECALL |
| CE, OE, WE | Control Inputs | Active-low chip enable, output enable, write enable; support standard SRAM timing protocols |
| HSB | I/O Status/Control | Open-drain output indicates STORE progress; driven LOW during operation, pulled HIGH post-completion |
| VCAP | Power Supply Terminal | Connects to external storage capacitor; internally regulated to ~2.5 V during AutoStore |
| VCC, VSS | Power/Ground | Single-supply interface; no separate I/O or core voltage domains |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap Nonvolatile Cell | Enables true nvSRAM operation with zero write latency penalty and no battery or EEPROM emulation overhead |
| AutoStore on Power Loss | Guarantees data persistence during uncontrolled power interruption using only a 4.7 µF capacitor on VCAP |
| Hardware STORE via HSB | Allows deterministic, externally triggered STORE independent of software state or CPU availability |
| Software STORE/RECALL | Permits controlled nonvolatile updates via address-based command sequences without pin toggling |
| Industrial Temperature Range | Validates full functionality across –40°C to +85°C ambient, supporting harsh environment deployments |
Applications
| Industrial PLC Data Logging | Medical Device Parameter Storage |
|---|---|
Use Scenario: Storing real-time sensor calibration coefficients and operational logs in programmable logic controllers during mains power failure. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate-access memory with guaranteed STORE on brownout within 10 µs of VCC drop below 2.2 V. Use Value: Eliminates need for supercapacitors or batteries while ensuring deterministic data capture without firmware intervention. | Use Scenario: Preserving patient-specific therapy settings and device runtime counters in portable infusion pumps during battery swap or shutdown. IC Role / Device Role / Timing Role: Persistent memory element retaining critical configuration across power cycles with zero write endurance penalty during normal operation. Use Value: Meets IEC 62304 Class C safety requirements for data integrity without external energy storage components. |
| Avionics Black Box Memory | Smart Grid Meter Firmware State |
Use Scenario: Capturing flight-critical telemetry snapshots in airborne data recorders subjected to rapid power loss during emergency landing. IC Role / Device Role / Timing Role: High-reliability nvSRAM executing parallel STORE across all 128 Kbytes within 15 ms using VCAP charge. Use Value: Achieves DO-160 Section 22 Category A transient survivability with no data corruption on power collapse. | Use Scenario: Maintaining metering state (kWh, demand intervals, tamper flags) in ANSI C12.20-certified electricity meters during grid outages. IC Role / Device Role / Timing Role: Industrial-grade nonvolatile memory interfacing directly to MCU's SRAM bus without glue logic or voltage translation. Use Value: Reduces BOM cost by replacing FRAM+backup battery stack while meeting 20-year field retention specification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nvSRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM24V10-G | 1-Mbit F-RAM with 15 ns access, unlimited endurance, but requires 2.7–3.6 V and lacks AutoStore on power-loss | No built-in VCAP-driven STORE; relies on host-controlled save prior to shutdown | Select when infinite STORE cycles outweigh need for autonomous brownout response |
| MB85RS1MT-FPN-GE1 | 1-Mbit FeRAM with 25 ns access, 10¹⁴ endurance, supports SPI interface only (no parallel bus) | Serial interface necessitates MCU firmware overhead and eliminates direct SRAM bus replacement | Select when board space constraints favor SOIC-8 over SOIC-32 and system can tolerate SPI latency |
Compared with FM24V10-G and MB85RS1MT-FPN-GE1, CY14B101LA-ZS25XI uniquely delivers parallel-SRAM compatibility, autonomous power-loss STORE, and industrial temperature support in a single package-making it optimal for legacy SRAM drop-in upgrades requiring zero firmware changes and guaranteed data capture.
Availability
CY14B101LA-ZS25XI is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device parameter storage, avionics black box memory, and smart grid meter firmware state retention requiring stable component supply and long-term lifecycle assurance.
Supply support for CY14B101LA-ZS25XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, industrial, and security solutions with vertical integration from silicon to system-level IP.
CY14B101LA-ZS25XI belongs to Infineon's nvSRAM product line, designed specifically for mission-critical industrial and medical applications where data persistence must be guaranteed without batteries, supercaps, or firmware dependencies.
FAQ
What is the minimum VCAP capacitance required for reliable AutoStore operation?
The CY14B101LA-ZS25XI requires a minimum 4.7 µF ±20% tantalum capacitor on the VCAP pin to ensure successful STORE completion at VCC = 2.7 V and TA = +85°C. Lower values risk incomplete STORE and data corruption. Ceramic capacitors are not recommended due to insufficient capacitance retention under DC bias.
Can CY14B101LA-ZS25XI be used as a direct replacement for standard SRAM in existing designs?
Yes, it is pin-compatible with industry-standard 32-pin SOIC 128K×8 SRAMs (e.g., IS61LV12816AL), but requires adding a VCAP capacitor and optionally pulling up WE. No firmware changes are needed for basic read/write; AutoStore activates automatically on power loss without host involvement.
Does the HSB pin require an external pull-up resistor?
No external pull-up is mandatory: after STORE completion, HSB is actively driven HIGH for tHHHD (200 ns min), then held HIGH by an internal weak pull-up. An external 4.7 kΩ pull-up is optional for noise immunity in electrically noisy environments but not required for functional operation.
How does software STORE differ from AutoStore in terms of data integrity guarantees?
Software STORE executes immediately upon command and completes within tST (15 ms max), independent of VCC level. AutoStore only triggers when VCC falls below VSWITCH (2.2 V), relying on VCAP charge; if VCAP is undersized or degraded, AutoStore may fail silently. Software STORE thus provides deterministic, verifiable persistence where timing control is essential.
CY14B101LA-ZS25XI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY14B101LA-ZS25XI FAQ
1.How can I place an order for CY14B101LA-ZS25XI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B101LA-ZS25XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B101LA-ZS25XI reliable?
The price and inventory of CY14B101LA-ZS25XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B101LA-ZS25XI is usually 5 days.
3.What payment methods are accepted for CY14B101LA-ZS25XI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B101LA-ZS25XI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B101LA-ZS25XI?
CY14B101LA-ZS25XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B101LA-ZS25XI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B101LA-ZS25XI?
For technical support, including CY14B101LA-ZS25XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B101LA-ZS25XI requirements.
6.How does Aetrix verify that CY14B101LA-ZS25XI is sourced from the original manufacturer or authorized distributors?
All CY14B101LA-ZS25XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B101LA-ZS25XI meets industry standards.
7.What is the process for return or replacement of CY14B101LA-ZS25XI?
All CY14B101LA-ZS25XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14B101LA-ZS25XI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B101LA-ZS25XI part is unused and in its original packaging.
Return procedure for CY14B101LA-ZS25XI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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