Infineon Technologies CY14B101LA-ZS45XIT
- Part No.:
- CY14B101LA-ZS45XIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY14B101LA-ZS45XIT.pdf
- Description:
- IC NVSRAM 1MBIT PAR 44TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:2,861
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY14B101LA-ZS45XIT from Infineon Technologies (formerly Cypress) is a 1-Mbit nonvolatile SRAM (nvSRAM) with QuantumTrap technology, organized as 128 K × 8, 45 ns access time, single 3.0 V (–10% to +20%) supply, industrial temperature range (–40°C to +85°C), and integrated AutoStore on power-loss. It serves as drop-in SRAM replacement in mission-critical data logging systems where power interruption must not cause data loss.
For engineers reviewing the CY14B101LA-ZS45XIT datasheet, CY14B101LA-ZS45XIT pinout, CY14B101LA-ZS45XIT application, or CY14B101LA-ZS45XIT equivalent, key selection factors include VCAP capacitor dependency for AutoStore, HSB pin behavior for hardware-initiated STORE, ×8 vs ×16 configuration mapping, and 1 million STORE endurance versus infinite SRAM read/write cycles.
Technical Context
This nvSRAM integrates parallel SRAM and nonvolatile QuantumTrap cells per bit, enabling simultaneous STORE/RECALL across all 131,072 bytes. STORE is triggered automatically at VCC < VSWITCH (2.2 V typ.), via software address sequence, or by pulling HSB LOW - all inhibiting SRAM access during execution.
RECALL occurs automatically on power-up or via software command, restoring full memory contents in ≤15 ms. The device supports byte-level control (BLE/BHE only in ×16 mode), tri-state I/Os, and requires external VCAP capacitance (12 µF min) tied to dedicated VCAP pin for reliable AutoStore operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 1 Mbit (128 K × 8), fully random-access SRAM array with embedded nonvolatile storage per cell |
| Access Time | 45 ns max - defines minimum cycle time for reliable read/write under worst-case industrial conditions |
| Supply Voltage | 3.0 V ±10% to +20% - operates across wide rail tolerance without external regulation |
| Data Retention | 20 years at +85°C - guaranteed nonvolatile data hold without refresh or power |
| STORE Endurance | 1 million cycles - limits total hardware/software/AutoStore operations over lifetime |
| Operating Temp | –40°C to +85°C - qualified for industrial environments without derating |
| VCAP Requirement | 12 µF tantalum or ceramic capacitor - mandatory for AutoStore; absence disables automatic power-loss protection |
Pinout & Package
Package: 44-pin Thin Small Outline Package (TSOP II), RoHS-compliant, 400 mil body width, lead pitch 0.8 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | Selects one of 131,072 × 8-bit locations; A16 used only in ×8 mode |
| DQ0–DQ7 | Bidirectional Data I/O | 8-bit parallel data path; tristated when OE HIGH or during STORE/RECALL |
| WE | Write Enable (Active LOW) | Controls write initiation; must be stable before CE assertion for valid write setup |
| CE | Chip Enable (Active LOW) | Enables device decoding; deassertion places outputs in high-impedance state |
| OE | Output Enable (Active LOW) | Activates output drivers during read; HIGH disables outputs to prevent bus contention |
| HSB | Hardware STORE Busy | Open-drain status signal: LOW = STORE in progress; driven LOW externally to initiate hardware STORE |
| VCAP | AutoStore Capacitor Supply | Internal regulator charges external capacitor; powers STORE during VCC collapse - no internal charge pump |
| VCC / VSS | Power / Ground | Single 3 V supply domain; VSS must be low-inductance connection to system ground plane |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap Nonvolatile Cell | Enables true SRAM interface with guaranteed 20-year data retention and 1M STORE cycles - no external EEPROM or battery required |
| AutoStore on Power Loss | Self-triggered below VSWITCH (2.2 V); uses stored VCAP energy - eliminates need for external power-fail detection circuitry |
| Software-Controlled STORE/RECALL | Executed via specific address write sequence (no special command bus); enables deterministic, timed nonvolatile save in firmware |
| Hardware STORE Initiation | Initiated by external pull-down of HSB; provides immediate, interrupt-driven store independent of processor state |
| Industrial Temperature Range | Validated operation from –40°C to +85°C with full timing compliance - suitable for uncontrolled enclosure deployments |
Applications
| Industrial Data Logger | Medical Device Memory Backup |
|---|---|
Use Scenario: Continuous sensor sampling in factory-floor PLCs with unpredictable mains interruptions. IC Role / Device Role / Timing Role: Primary working memory with automatic power-loss capture - replaces battery-backed SRAM and avoids electrolytic capacitor aging concerns. Use Value: Eliminates field-replacement of backup batteries and guarantees last-known state recovery within 15 ms of power restoration. | Use Scenario: ECG monitor storing real-time waveform buffers during patient transport where AC power is unavailable. IC Role / Device Role / Timing Role: Volatile buffer with fail-safe nonvolatile shadow - retains up to 128 KB of diagnostic data across power cycles without supervision. Use Value: Meets IEC 62304 Class C software safety requirements for data integrity during power transition events. |
| Telecom Base Station Control | Automotive Telematics Unit |
Use Scenario: Storing configuration registers and alarm logs in remote radio units exposed to grid instability. IC Role / Device Role / Timing Role: Configuration scratchpad with atomic STORE/RECALL - ensures boot-time consistency after brownout recovery. Use Value: Prevents misconfiguration-induced service outages by guaranteeing register state persistence across >10⁶ power cycles. | Use Scenario: Recording CAN bus diagnostics and GPS position history in vehicle infotainment units during ignition-off periods. IC Role / Device Role / Timing Role: Crash-data buffer with zero-latency STORE trigger - captures final 5 seconds of operation before voltage collapse. Use Value: Supports UNECE R156 compliance by preserving forensically valid event data without external power monitoring ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nvSRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM24V10-G | 1-Mbit F-RAM (45 ns), no VCAP required, unlimited STORE endurance, but higher standby current (15 µA vs 25 µA) | No capacitor footprint or layout constraints; better for space-constrained designs but less tolerant of rapid power cycling | Choose FM24V10-G if capacitor placement is impractical and STORE frequency exceeds 10⁵ cycles/year |
| MB85RS1MT-FPN-GE1 | 1-Mbit FRAM (25 ns), SPI interface only, no parallel bus support, no HSB or AutoStore logic | Requires MCU firmware rewrite for serial interface; lacks hardware STORE trigger and power-loss autonomy | Choose MB85RS1MT-FPN-GE1 only if system already uses SPI memory and can tolerate software-managed save latency |
Compared with FM24V10-G and MB85RS1MT-FPN-GE1, CY14B101LA-ZS45XIT uniquely delivers parallel SRAM compatibility, autonomous power-loss STORE, and hardware interrupt capability - critical for real-time deterministic systems where bus timing and failure response cannot be delegated to firmware.
Availability
CY14B101LA-ZS45XIT is available at Aetrix Electronics and suitable for industrial data loggers, medical diagnostic recorders, telecom base station controllers, and automotive telematics units requiring stable component supply with guaranteed 20-year data retention and 1-million-cycle nonvolatile endurance.
Supply support for CY14B101LA-ZS45XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power systems, microcontrollers, sensors, and memory solutions for industrial, automotive, and IoT applications.
CY14B101LA-ZS45XIT belongs to Infineon's nvSRAM product line, designed specifically to replace battery-backed SRAM in systems where maintenance-free, long-term data integrity under intermittent power is mandatory.
FAQ
What is the minimum VCAP capacitance required for reliable AutoStore operation?
The CY14B101LA-ZS45XIT requires a minimum 12 µF tantalum or low-ESR ceramic capacitor on the VCAP pin. This value ensures sufficient energy to complete a full 1-Mbit STORE cycle when VCC drops below VSWITCH (2.2 V). Using less capacitance risks incomplete STORE and data corruption. Datasheet specifies 12 µF as absolute minimum; 22 µF is recommended for margin across temperature and voltage tolerance.
Can CY14B101LA-ZS45XIT operate in ×16 mode?
No - CY14B101LA-ZS45XIT is the ×8 variant (128 K × 8), distinct from CY14B101NA which supports ×16 (64 K × 16). Pinout, address mapping (A0–A16 active), and data bus width (DQ0–DQ7 only) are fixed for ×8 operation. Attempting ×16 use will result in incorrect addressing and data misalignment due to missing BHE/ BLE pins in this package variant.
Is HSB pin functional in the 44-pin TSOP II package of CY14B101LA-ZS45XIT?
Yes - HSB is present and fully functional in the 44-pin TSOP II package used by CY14B101LA-ZS45XIT. The datasheet explicitly notes HSB is "not available in 44-pin TSOP II (×16) package", confirming its inclusion in the ×8 variant. It operates as open-drain output for status indication and input for hardware STORE initiation, requiring external pull-up for proper idle-HIGH behavior.
Does CY14B101LA-ZS45XIT require initialization after power-up before use?
No initialization sequence is required. After power-up RECALL completes (~15 ms), the device behaves identically to a standard SRAM: CE/OE/WE controls function immediately, and all addresses/data lines are ready for read/write. However, firmware must wait for RECALL completion - verified either by polling HSB (goes HIGH post-RECALL) or by inserting fixed delay - before accessing memory to avoid reading stale or undefined data.
CY14B101LA-ZS45XIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY14B101LA-ZS45XIT FAQ
1.How can I place an order for CY14B101LA-ZS45XIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B101LA-ZS45XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B101LA-ZS45XIT reliable?
The price and inventory of CY14B101LA-ZS45XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B101LA-ZS45XIT is usually 5 days.
3.What payment methods are accepted for CY14B101LA-ZS45XIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B101LA-ZS45XIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B101LA-ZS45XIT?
CY14B101LA-ZS45XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B101LA-ZS45XIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B101LA-ZS45XIT?
For technical support, including CY14B101LA-ZS45XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B101LA-ZS45XIT requirements.
6.How does Aetrix verify that CY14B101LA-ZS45XIT is sourced from the original manufacturer or authorized distributors?
All CY14B101LA-ZS45XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B101LA-ZS45XIT meets industry standards.
7.What is the process for return or replacement of CY14B101LA-ZS45XIT?
All CY14B101LA-ZS45XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14B101LA-ZS45XIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B101LA-ZS45XIT part is unused and in its original packaging.
Return procedure for CY14B101LA-ZS45XIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY14B101LA-ZS45XIT Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

