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Infineon Technologies CY14B101LA-ZS45XIT

Part No.:
CY14B101LA-ZS45XIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY14B101LA-ZS45XIT.pdf
Description:
IC NVSRAM 1MBIT PAR 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,861

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Product details

Overview

CY14B101LA-ZS45XIT from Infineon Technologies (formerly Cypress) is a 1-Mbit nonvolatile SRAM (nvSRAM) with QuantumTrap technology, organized as 128 K × 8, 45 ns access time, single 3.0 V (–10% to +20%) supply, industrial temperature range (–40°C to +85°C), and integrated AutoStore on power-loss. It serves as drop-in SRAM replacement in mission-critical data logging systems where power interruption must not cause data loss.

For engineers reviewing the CY14B101LA-ZS45XIT datasheet, CY14B101LA-ZS45XIT pinout, CY14B101LA-ZS45XIT application, or CY14B101LA-ZS45XIT equivalent, key selection factors include VCAP capacitor dependency for AutoStore, HSB pin behavior for hardware-initiated STORE, ×8 vs ×16 configuration mapping, and 1 million STORE endurance versus infinite SRAM read/write cycles.

Technical Context

This nvSRAM integrates parallel SRAM and nonvolatile QuantumTrap cells per bit, enabling simultaneous STORE/RECALL across all 131,072 bytes. STORE is triggered automatically at VCC < VSWITCH (2.2 V typ.), via software address sequence, or by pulling HSB LOW - all inhibiting SRAM access during execution.

RECALL occurs automatically on power-up or via software command, restoring full memory contents in ≤15 ms. The device supports byte-level control (BLE/BHE only in ×16 mode), tri-state I/Os, and requires external VCAP capacitance (12 µF min) tied to dedicated VCAP pin for reliable AutoStore operation.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Size1 Mbit (128 K × 8), fully random-access SRAM array with embedded nonvolatile storage per cell
Access Time45 ns max - defines minimum cycle time for reliable read/write under worst-case industrial conditions
Supply Voltage3.0 V ±10% to +20% - operates across wide rail tolerance without external regulation
Data Retention20 years at +85°C - guaranteed nonvolatile data hold without refresh or power
STORE Endurance1 million cycles - limits total hardware/software/AutoStore operations over lifetime
Operating Temp–40°C to +85°C - qualified for industrial environments without derating
VCAP Requirement12 µF tantalum or ceramic capacitor - mandatory for AutoStore; absence disables automatic power-loss protection

Pinout & Package

Package: 44-pin Thin Small Outline Package (TSOP II), RoHS-compliant, 400 mil body width, lead pitch 0.8 mm.

Pin/TerminalCircuit RoleDesign Meaning
A0–A16Address InputsSelects one of 131,072 × 8-bit locations; A16 used only in ×8 mode
DQ0–DQ7Bidirectional Data I/O8-bit parallel data path; tristated when OE HIGH or during STORE/RECALL
WEWrite Enable (Active LOW)Controls write initiation; must be stable before CE assertion for valid write setup
CEChip Enable (Active LOW)Enables device decoding; deassertion places outputs in high-impedance state
OEOutput Enable (Active LOW)Activates output drivers during read; HIGH disables outputs to prevent bus contention
HSBHardware STORE BusyOpen-drain status signal: LOW = STORE in progress; driven LOW externally to initiate hardware STORE
VCAPAutoStore Capacitor SupplyInternal regulator charges external capacitor; powers STORE during VCC collapse - no internal charge pump
VCC / VSSPower / GroundSingle 3 V supply domain; VSS must be low-inductance connection to system ground plane

Key Features

FeatureDesign Value
QuantumTrap Nonvolatile CellEnables true SRAM interface with guaranteed 20-year data retention and 1M STORE cycles - no external EEPROM or battery required
AutoStore on Power LossSelf-triggered below VSWITCH (2.2 V); uses stored VCAP energy - eliminates need for external power-fail detection circuitry
Software-Controlled STORE/RECALLExecuted via specific address write sequence (no special command bus); enables deterministic, timed nonvolatile save in firmware
Hardware STORE InitiationInitiated by external pull-down of HSB; provides immediate, interrupt-driven store independent of processor state
Industrial Temperature RangeValidated operation from –40°C to +85°C with full timing compliance - suitable for uncontrolled enclosure deployments

Applications

Industrial Data LoggerMedical Device Memory Backup

Use Scenario: Continuous sensor sampling in factory-floor PLCs with unpredictable mains interruptions.

IC Role / Device Role / Timing Role: Primary working memory with automatic power-loss capture - replaces battery-backed SRAM and avoids electrolytic capacitor aging concerns.

Use Value: Eliminates field-replacement of backup batteries and guarantees last-known state recovery within 15 ms of power restoration.

Use Scenario: ECG monitor storing real-time waveform buffers during patient transport where AC power is unavailable.

IC Role / Device Role / Timing Role: Volatile buffer with fail-safe nonvolatile shadow - retains up to 128 KB of diagnostic data across power cycles without supervision.

Use Value: Meets IEC 62304 Class C software safety requirements for data integrity during power transition events.

Telecom Base Station ControlAutomotive Telematics Unit

Use Scenario: Storing configuration registers and alarm logs in remote radio units exposed to grid instability.

IC Role / Device Role / Timing Role: Configuration scratchpad with atomic STORE/RECALL - ensures boot-time consistency after brownout recovery.

Use Value: Prevents misconfiguration-induced service outages by guaranteeing register state persistence across >10⁶ power cycles.

Use Scenario: Recording CAN bus diagnostics and GPS position history in vehicle infotainment units during ignition-off periods.

IC Role / Device Role / Timing Role: Crash-data buffer with zero-latency STORE trigger - captures final 5 seconds of operation before voltage collapse.

Use Value: Supports UNECE R156 compliance by preserving forensically valid event data without external power monitoring ICs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
FM24V10-G1-Mbit F-RAM (45 ns), no VCAP required, unlimited STORE endurance, but higher standby current (15 µA vs 25 µA)No capacitor footprint or layout constraints; better for space-constrained designs but less tolerant of rapid power cyclingChoose FM24V10-G if capacitor placement is impractical and STORE frequency exceeds 10⁵ cycles/year
MB85RS1MT-FPN-GE11-Mbit FRAM (25 ns), SPI interface only, no parallel bus support, no HSB or AutoStore logicRequires MCU firmware rewrite for serial interface; lacks hardware STORE trigger and power-loss autonomyChoose MB85RS1MT-FPN-GE1 only if system already uses SPI memory and can tolerate software-managed save latency

Compared with FM24V10-G and MB85RS1MT-FPN-GE1, CY14B101LA-ZS45XIT uniquely delivers parallel SRAM compatibility, autonomous power-loss STORE, and hardware interrupt capability - critical for real-time deterministic systems where bus timing and failure response cannot be delegated to firmware.

Availability

CY14B101LA-ZS45XIT is available at Aetrix Electronics and suitable for industrial data loggers, medical diagnostic recorders, telecom base station controllers, and automotive telematics units requiring stable component supply with guaranteed 20-year data retention and 1-million-cycle nonvolatile endurance.

Supply support for CY14B101LA-ZS45XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power systems, microcontrollers, sensors, and memory solutions for industrial, automotive, and IoT applications.

CY14B101LA-ZS45XIT belongs to Infineon's nvSRAM product line, designed specifically to replace battery-backed SRAM in systems where maintenance-free, long-term data integrity under intermittent power is mandatory.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B101LA-ZS45XIT requires a minimum 12 µF tantalum or low-ESR ceramic capacitor on the VCAP pin. This value ensures sufficient energy to complete a full 1-Mbit STORE cycle when VCC drops below VSWITCH (2.2 V). Using less capacitance risks incomplete STORE and data corruption. Datasheet specifies 12 µF as absolute minimum; 22 µF is recommended for margin across temperature and voltage tolerance.

Can CY14B101LA-ZS45XIT operate in ×16 mode?

No - CY14B101LA-ZS45XIT is the ×8 variant (128 K × 8), distinct from CY14B101NA which supports ×16 (64 K × 16). Pinout, address mapping (A0–A16 active), and data bus width (DQ0–DQ7 only) are fixed for ×8 operation. Attempting ×16 use will result in incorrect addressing and data misalignment due to missing BHE/ BLE pins in this package variant.

Is HSB pin functional in the 44-pin TSOP II package of CY14B101LA-ZS45XIT?

Yes - HSB is present and fully functional in the 44-pin TSOP II package used by CY14B101LA-ZS45XIT. The datasheet explicitly notes HSB is "not available in 44-pin TSOP II (×16) package", confirming its inclusion in the ×8 variant. It operates as open-drain output for status indication and input for hardware STORE initiation, requiring external pull-up for proper idle-HIGH behavior.

Does CY14B101LA-ZS45XIT require initialization after power-up before use?

No initialization sequence is required. After power-up RECALL completes (~15 ms), the device behaves identically to a standard SRAM: CE/OE/WE controls function immediately, and all addresses/data lines are ready for read/write. However, firmware must wait for RECALL completion - verified either by polling HSB (goes HIGH post-RECALL) or by inserting fixed delay - before accessing memory to avoid reading stale or undefined data.

CY14B101LA-ZS45XIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY14B101LA-ZS45XIT FAQ

1.How can I place an order for CY14B101LA-ZS45XIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B101LA-ZS45XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B101LA-ZS45XIT reliable?

The price and inventory of CY14B101LA-ZS45XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B101LA-ZS45XIT is usually 5 days.

3.What payment methods are accepted for CY14B101LA-ZS45XIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B101LA-ZS45XIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B101LA-ZS45XIT?

CY14B101LA-ZS45XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B101LA-ZS45XIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B101LA-ZS45XIT?

For technical support, including CY14B101LA-ZS45XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B101LA-ZS45XIT requirements.

6.How does Aetrix verify that CY14B101LA-ZS45XIT is sourced from the original manufacturer or authorized distributors?

All CY14B101LA-ZS45XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B101LA-ZS45XIT meets industry standards.

7.What is the process for return or replacement of CY14B101LA-ZS45XIT?

All CY14B101LA-ZS45XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14B101LA-ZS45XIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B101LA-ZS45XIT part is unused and in its original packaging.

Return procedure for CY14B101LA-ZS45XIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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