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Infineon Technologies CY14B101L-SP35XC

Part No.:
CY14B101L-SP35XC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-BSSOP (0.295", 7.50mm Width)
Datasheet:
AetrixCY14B101L-SP35XC.pdf
Description:
IC NVSRAM 1MBIT PARALLEL 48SSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,508

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Product details

Overview

CY14B101L-SP35XC from Cypress Semiconductor is a 1 Mbit (128K × 8) nonvolatile static RAM with QuantumTrap technology, functioning as a drop-in SRAM replacement with integrated nonvolatile storage. It delivers 35 ns access time, operates from single 3V ±10% supply, and supports automatic STORE on power-down using an external VCAP capacitor. Used in industrial control modules where data persistence across power cycles is critical.

For engineers reviewing the CY14B101L-SP35XC datasheet, CY14B101L-SP35XC pinout, CY14B101L-SP35XC application, or CY14B101L-SP35XC equivalent, key selection criteria include AutoStore timing behavior, HSB-controlled hardware store latency, software STORE/RECALL address sequence compliance, and VCAP capacitor sizing for guaranteed 35 ns–compatible STORE execution under brown-out conditions.

Technical Context

The CY14B101L-SP35XC integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling simultaneous STORE/RECALL of all 131,072 bytes. Its architecture decouples volatile read/write (unlimited cycles) from nonvolatile operations: up to 200,000 STOREs and unlimited RECALLs, with 20-year data retention at 55°C.

STORE is triggered by power-down (AutoStore), hardware signal (HSB pin assertion), or software sequence (six specific CE-controlled reads); RECALL occurs automatically at power-up or via identical six-read software command. All STORE/RECALL operations inhibit SRAM access until completion, with tSTORE = 20 ms max and tRECALL = 15 ms max.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 1 Mbit (128K × 8), directly replaces standard 128K × 8 SRAM without bus redesign.
Access Time 35 ns - defines minimum cycle time for reliable READ/WRITE under commercial temperature and 3.6 V VCC.
Supply Voltage 3.0 V to 3.6 V - single-rail operation eliminates need for voltage translators in 3.3 V systems.
STORE Endurance 200,000 cycles - limits field-replaceable unit lifetime if AutoStore triggers >5×/day over 10 years.
Data Retention 20 years at 55°C - validated retention period for industrial environments without refresh.
VCAP Requirement 12 µF tantalum or 22 µF ceramic - minimum capacitance to sustain full STORE operation during VCC dropout ≥100 µs.
Operating Temperature –40°C to +85°C - supports extended industrial temperature range without derating.

Pinout & Package

Package: 32-pin SOIC (300 mil width). Pin compatibility confirmed with STK14CA8; pin 1 index corner marked.

Pin/Terminal Circuit Role Design Meaning
A0–A16 Address Input 17-bit address bus supporting full 128K byte addressing; A16 enables 131,072th location.
DQ0–DQ7 Bidirectional Data I/O 8-bit data bus shared for READ output and WRITE input; tri-stated when OE HIGH or during STORE/RECALL.
WE Write Enable (Active LOW) Controls WRITE initiation; must remain HIGH during STORE/RECALL to prevent bus contention.
CE Chip Enable (Active LOW) Primary chip select; required LOW for all SRAM operations; used to clock software STORE/RECALL sequences.
OE Output Enable (Active LOW) Enables DQ outputs during READ; HIGH disables outputs and avoids conflict during WRITE or STORE.
HSB Hardware Store Busy (Open Drain) Drives LOW during STORE/RECALL to signal busy; externally pulled up; initiates STORE when driven LOW.
VCAP AutoStore Capacitor Supply Connects to external storage capacitor; internal charge pump drives it to ~5 V during normal operation.
VCC / VSS Power / Ground Single 3V supply rail; requires 0.1 µF high-frequency bypass between VCC and VSS near package.

Key Features

Feature Design Value
AutoStore on Power Down Guaranteed STORE execution using VCAP energy without host intervention or firmware dependency.
Software-Controlled STORE/RECALL Initiated via six precise CE-controlled READs - enables deterministic, debuggable nonvolatile updates.
Hardware STORE via HSB External microcontroller asserts HSB to trigger STORE within tDELAY (max 100 ns), synchronizing with system state.
Unlimited SRAM Read/Write Cycles Preserves full SRAM performance characteristics while adding nonvolatility - no wear leveling overhead.
Data Protection During Brown-Out Automatically inhibits WRITE and STORE when VCC falls below VSWITCH (2.7 V typ), preventing corruption.

Applications

Industrial PLC Data Logging Medical Device Configuration Storage

Use Scenario: Storing real-time sensor calibration coefficients and alarm thresholds in programmable logic controllers during runtime.

IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer holding last-known-good configuration; retains values across unexpected AC loss or maintenance shutdowns.

Use Value: Eliminates need for battery-backed RAM or EEPROM write delays; enables instant recall (<15 ms) after power restoration.

Use Scenario: Preserving patient-specific therapy parameters (e.g., infusion rates, pressure limits) in portable infusion pumps.

IC Role / Device Role / Timing Role: Fail-safe memory storing critical treatment settings that must survive battery swap or low-power mode entry.

Use Value: Meets IEC 62304 Class C requirements for data integrity; no risk of partial writes or erase cycles corrupting active therapy data.

Telecom Base Station Status Buffer Automotive ADAS ECU Crash Logs

Use Scenario: Capturing link-layer handshake states and error counters in 4G/LTE remote radio units during network handover.

IC Role / Device Role / Timing Role: High-speed status mirror with atomic STORE on VCC sag - ensures diagnostic trace continuity across brief grid dips.

Use Value: Provides deterministic 20 ms STORE window independent of host CPU load or interrupt latency.

Use Scenario: Recording pre-crash CAN bus snapshots (steering angle, brake pressure, yaw rate) in autonomous driving ECUs.

IC Role / Device Role / Timing Role: Zero-latency nonvolatile capture triggered by vehicle power fault detection circuitry via HSB pin.

Use Value: Guarantees log persistence even if main MCU resets before software-initiated save - meets ISO 26262 ASIL-B evidence requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
STK14CA8-35I-WH Pin-compatible 1 Mbit nvSRAM; 35 ns access; same SOIC-32 package; uses different nonvolatile technology (SONOS), lower STORE endurance (100,000 cycles). Lacks HSB pin - STORE only via software sequence or power-down; no hardware-triggered STORE capability. Select when HSB signaling is unused and cost sensitivity outweighs STORE endurance requirements.
FM1808-35-SG 1 Mbit FRAM-based nvRAM; 35 ns access; SOIC-32; unlimited STORE endurance; no VCAP capacitor required. No AutoStore on power-down - requires host-controlled STORE before power loss; higher standby current (15 µA vs. 1 µA). Select when deterministic STORE timing is less critical than eliminating external capacitor and extending endurance beyond 200k cycles.

Compared with STK14CA8-35I-WH and FM1808-35-SG, CY14B101L-SP35XC uniquely combines HSB-triggered STORE, VCAP-powered AutoStore, and 200k-cycle endurance - making it optimal for systems requiring both hardware-synchronized and hands-off nonvolatile backup.

Availability

CY14B101L-SP35XC is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device configuration storage, and telecom base station status buffering requiring stable component supply and long-term lifecycle support.

Supply support for CY14B101L-SP35XC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY14B101L belongs to Cypress's nvSRAM product line, engineered specifically for applications demanding SRAM speed with guaranteed nonvolatile data retention during uncontrolled power loss - targeting mission-critical infrastructure where battery backup is impractical.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B101L-SP35XC requires a minimum 12 µF tantalum or 22 µF ceramic capacitor on the VCAP pin to guarantee successful STORE execution during a VCC dropout event lasting up to 100 µs. This value is derived from internal charge pump characteristics and worst-case tSTORE timing (20 ms) under 3.6 V VCC and 85°C ambient. Using undersized capacitance risks incomplete STORE and data loss.

Can the CY14B101L-SP35XC be used as a direct replacement for standard SRAM without design changes?

Yes - the CY14B101L-SP35XC is pin- and function-compatible with standard 128K × 8 SRAMs such as the IS61LV12816, provided VCAP is added and WE/OE timing margins accommodate tHZWE (output disable delay). No address/data bus or control logic modifications are needed; however, HSB must be left unconnected or pulled up if unused, and VCAP bypassing is mandatory.

How does the CY14B101L-SP35XC prevent data corruption during brown-out conditions?

The device monitors VCC against VSWITCH (2.7 V typical). When VCC drops below this threshold, it automatically disables all externally initiated STORE and WRITE operations. Internally, ongoing SRAM accesses complete before STORE inhibition activates, and the chip holds outputs in high-impedance state to avoid bus contention - ensuring no partial writes or invalid STOREs occur during unstable supply.

Is the CY14B101L-SP35XC recommended for new designs?

No - Cypress explicitly marks the CY14B101L family as "Not Recommended for New Designs" in its official documentation (Rev. *K, Nov 2009). While fully functional and supported for legacy program continuity, Infineon recommends migrating to newer nvSRAM families like the CY14E101QN for new projects due to enhanced endurance, lower power, and extended lifecycle assurance.

CY14B101L-SP35XC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-BSSOP (0.295", 7.50mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
35ns
Access Time:
35 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-SSOP

CY14B101L-SP35XC FAQ

1.How can I place an order for CY14B101L-SP35XC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B101L-SP35XC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B101L-SP35XC reliable?

The price and inventory of CY14B101L-SP35XC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B101L-SP35XC is usually 5 days.

3.What payment methods are accepted for CY14B101L-SP35XC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B101L-SP35XC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B101L-SP35XC?

CY14B101L-SP35XC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B101L-SP35XC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B101L-SP35XC?

For technical support, including CY14B101L-SP35XC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B101L-SP35XC requirements.

6.How does Aetrix verify that CY14B101L-SP35XC is sourced from the original manufacturer or authorized distributors?

All CY14B101L-SP35XC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B101L-SP35XC meets industry standards.

7.What is the process for return or replacement of CY14B101L-SP35XC?

All CY14B101L-SP35XC units undergo pre-shipment inspection (PSI). If there is an issue with CY14B101L-SP35XC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B101L-SP35XC part is unused and in its original packaging.

Return procedure for CY14B101L-SP35XC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY14B101L-SP35XC Tags

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