Infineon Technologies CY14B101L-SP45XC

Overview

CY14B101L-SP45XC from Cypress Semiconductor is a 1 Mbit (128K × 8) nonvolatile SRAM with QuantumTrap technology, functioning as a drop-in SRAM replacement that retains data without battery or external backup. It delivers 45 ns access time, operates from single 3V ±10% supply, and supports AutoStore on power loss using an external VCAP capacitor. Used in industrial control modules where deterministic power-fail data capture is required.

For engineers reviewing the CY14B101L-SP45XC datasheet, CY14B101L-SP45XC pinout, CY14B101L-SP45XC application, or CY14B101L-SP45XC equivalent, key selection criteria include STORE/RECALL control modes (hardware HSB, software sequence, or AutoStore), VCAP-based energy harvesting for power-loss store, and compatibility with legacy 32-pin SOIC footprint designs.

Technical Context

The CY14B101L integrates standard SRAM array (1024 × 1024) with parallel QuantumTrap nonvolatile cells per bit, enabling simultaneous STORE/RECALL across all 131,072 bytes. It uses internal charge pump to drive VCAP to 5V and initiates AutoStore when VCC drops below VSWITCH (2.7V typ).

STORE operations are conditional: hardware (HSB-triggered) and AutoStore require at least one prior WRITE since last STORE/RECALL; software STORE bypasses this condition. RECALL occurs automatically on power-up or via six-address read sequence ending at 0x4C63, clearing SRAM before loading nonvolatile data.

Key Specifications

Pinout & Package

Package: 32-pin SOIC (300 mil width), RoHS-compliant, surface-mount. Pin layout matches industry-standard 32-pin SRAM footprint for direct PCB replacement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with STK14CA8-35I/W and FM1808-45-SG, CY14B101L-SP45XC uniquely balances low-power standby, predictable STORE latency, and zero-maintenance operation-making it optimal for industrial systems requiring both speed and assured power-fail resilience without battery logistics or FRAM's higher static current.

Availability

CY14B101L-SP45XC is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostic devices, telecom line cards, and automotive body control modules requiring stable component supply and long-lifecycle support.

Supply support for CY14B101L-SP45XC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications infrastructure.

The CY14B series targets applications needing SRAM-speed operation with guaranteed nonvolatile storage-specifically engineered for deterministic power-loss data capture in mission-critical embedded systems.

FAQ

What is the function of the VCAP pin, and what capacitor value is required?

The VCAP pin connects to a 0.1 µF ceramic capacitor that stores energy used to complete a STORE operation during VCC collapse. The internal charge pump raises VCAP to ~5V during normal operation. This capacitor must be placed within 5 mm of the pin with short, low-inductance traces to ensure reliable STORE execution under fast power droop conditions.

How does the CY14B101L-SP45XC handle multiple power-loss events in rapid succession?

Each STORE consumes one cycle of the 200,000 rated endurance. The device suppresses consecutive AutoStore or HSB-initiated STOREs unless at least one WRITE occurs between them-preventing unnecessary wear. Software STOREs are exempt from this restriction and can be issued on demand regardless of prior activity.

Can the CY14B101L-SP45XC be used in place of a standard SRAM without modifying existing hardware?

Yes-pinout and timing are fully compatible with standard 32-pin 128K×8 SRAMs. However, VCAP must be added (0.1 µF to ground), WE should be pulled up externally, and HSB may require a 10 kΩ pull-up if monitored. No changes to address/data/control routing are needed.

What happens during a RECALL operation, and does it affect nonvolatile data?

During RECALL, the SRAM array is first cleared, then populated with data from QuantumTrap cells. This process takes tHRECALL (max 20 ms). Nonvolatile data remains unaltered and can be recalled unlimited times-no wear is incurred, and stored values persist for 20 years at 55°C.