Infineon Technologies CY14B101L-SZ45XI

Overview

CY14B101L-SZ45XI from Cypress Semiconductor is a 1 Mbit (128K × 8) nonvolatile SRAM with QuantumTrap technology, delivering 45 ns access time, single 3V (+20%, –10%) operation, and automatic STORE on power loss using an external VCAP capacitor. It functions as a drop-in SRAM replacement in systems requiring persistent data retention without battery backup-used in industrial PLCs, medical data loggers, and telecom control cards where write-cycle integrity during brownout is critical.

For engineers reviewing the CY14B101L-SZ45XI datasheet, CY14B101L-SZ45XI pinout, CY14B101L-SZ45XI application, or CY14B101L-SZ45XI equivalent, key selection criteria include AutoStore timing behavior, HSB-controlled hardware STORE latency, VCAP capacitance requirements (22 µF), software STORE/RECALL address sequence validity, and compatibility with STK14CA8-based legacy designs.

Technical Context

The CY14B101L integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling simultaneous STORE/RECALL across all 131,072 bytes. Its architecture decouples volatile read/write cycles (unlimited) from nonvolatile operations: STORE supports up to 200,000 cycles; RECALL is unlimited. Power-loss detection triggers AutoStore when VCC drops below VSWITCH (2.7 V min), using charge stored on VCAP.

STORE initiation occurs via three independent paths: hardware (HSB pin assertion), software (six-address CE-controlled READ sequence), or AutoStore (power-down). RECALL is triggered automatically at power-up or via identical six-address sequence ending in 0x4C63. During STORE/RECALL, SRAM I/O is disabled for tSTORE (max 20 ms) or tRECALL (max 15 ms).

Key Specifications

Pinout & Package

Package: 32-pin SOIC (300 mil width), RoHS-compliant, surface-mountable with standard reflow profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with STK14CA8-35I, CY14B101L-SZ45XI reduces BOM count and design complexity via integrated AutoStore; versus FM1808-40-TG, it trades unlimited endurance for higher density and proven 20-year retention at elevated temperature-critical for sealed industrial enclosures.

Availability

CY14B101L-SZ45XI is available at Aetrix Electronics and suitable for industrial data loggers, telecom control cards, medical diagnostic equipment, and automotive ADAS ECUs requiring stable component supply with long-term lifecycle support.

Supply support for CY14B101L-SZ45XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY14B101L belongs to Cypress's nvSRAM product line, engineered specifically to replace battery-backed SRAM in mission-critical systems where maintenance-free, long-life nonvolatility is mandatory.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B101L-SZ45XI requires a minimum 22 µF low-ESR tantalum or ceramic capacitor on the VCAP pin. This value ensures sufficient energy to complete a full 1 Mbit STORE within the specified tSTORE (≤20 ms) when VCC collapses from 3.0 V to VSWITCH (2.7 V). Placement within 1 cm of the pin and use of short, wide traces are mandatory to minimize impedance.

Can software STORE and AutoStore occur simultaneously?

No. The CY14B101L-SZ45XI prevents concurrent STORE operations: if AutoStore is triggered by VCC drop while a software STORE sequence is in progress, the software sequence is aborted and AutoStore executes. Similarly, asserting HSB during AutoStore has no effect-the device prioritizes the power-loss event and ignores new STORE requests until completion.

Is the HSB pin required for normal operation?

No. The HSB pin is optional: if unused, it may be left floating (internal weak pull-up holds it HIGH). However, connecting it to a microcontroller GPIO enables real-time monitoring of STORE progress and allows synchronization of system suspend/resume with nvSRAM state transitions-critical in deterministic real-time systems.

How does the CY14B101L-SZ45XI handle partial power loss where VCC sags but does not fall below VSWITCH?

When VCC sags above VSWITCH (≥2.7 V), AutoStore is not triggered and SRAM operation continues uninterrupted. The device monitors VCC continuously; only crossing the VSWITCH threshold initiates STORE. During such brownout conditions, data protection logic inhibits WRITE operations until VCC stabilizes, preventing corruption of both SRAM and nonvolatile cells.