Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY14B101NA-ZS25XIT

Part No.:
CY14B101NA-ZS25XIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY14B101NA-ZS25XIT.pdf
Description:
IC NVSRAM 1MBIT PAR 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,867

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY14B101NA-ZS25XIT from Infineon Technologies (formerly Cypress) is a 1-Mbit nonvolatile SRAM organized as 64 K × 16, featuring QuantumTrap nonvolatile storage, 25 ns access time, single 3.0 V ±10% supply, and industrial temperature operation. It performs automatic STORE on power-down using an external VCAP capacitor and supports software- or hardware-initiated STORE/RECALL cycles in embedded systems requiring persistent memory without battery backup.

For engineers reviewing the CY14B101NA-ZS25XIT datasheet, CY14B101NA-ZS25XIT pinout, CY14B101NA-ZS25XIT application, or CY14B101NA-ZS25XIT equivalent, key selection criteria include ×16 bus width support, HSB-controlled hardware STORE timing, VCAP-based AutoStore energy budget, and compatibility with legacy SRAM interfaces in mission-critical data logging and control systems.

Technical Context

This nvSRAM integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling simultaneous STORE/RECALL across all 65,536 words. The architecture inhibits SRAM access during nonvolatile operations and guarantees infinite SRAM read/write cycles alongside 1 million STORE endurance and 20-year data retention.

AutoStore triggers when VCC drops below VSWITCH (~2.7 V), disconnecting VCAP from VCC and using stored charge to complete a full 64 K-word STORE in ≤20 ms. Hardware STORE is initiated by pulling HSB low, while software STORE uses a specific address sequence - both bypass the AutoStore write-count dependency.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density1 Mbit (64 K × 16 configuration)
Access Time25 ns - determines maximum SRAM read/write clock rate in synchronous systems
Supply Voltage3.0 V ±10% - compatible with standard 3.3 V LDO rails with margin for droop
Data Retention20 years at TA = –40 °C to +85 °C - enables long-term unpowered data hold in field-deployed equipment
STORE Endurance1 million cycles - defines lifetime limit for nonvolatile write operations under frequent power-loss events
Operating Temperature–40 °C to +85 °C - qualified for industrial control, automotive body electronics, and telecom infrastructure
VCAP Requirement12 μF tantalum or 22 μF ceramic - sets minimum capacitance to sustain full STORE at worst-case VCC dropout slope

Pinout & Package

Package: 44-pin Thin Small Outline Package (TSOP II), Type II, RoHS-compliant, 0.8 mm pitch.

Pin/TerminalCircuit RoleDesign Meaning
A0–A15Address inputsSelect one of 65,536 16-bit words; A16 not used in ×16 mode
DQ0–DQ15Bidirectional data I/O16-bit parallel data bus; tristated when OE HIGH or during STORE/RECALL
CE, OE, WEChip/Output/Write EnableStandard SRAM control signals; CE and OE active LOW, WE active LOW for write strobe
BHE, BLEByte enable controlsEnable high/low byte (DQ15–DQ8 or DQ7–DQ0) independently during ×16 writes/reads
HSBHardware STORE BusyOpen-drain output indicating STORE progress; also serves as input to initiate hardware STORE
VCAPAutoStore capacitor terminalConnects to external storage capacitor; internal regulator charges it to ~2.7 V during normal operation
VCC, VSSPower and groundSingle 3.0 V supply; VSS must be low-impedance return path for STORE current surge

Key Features

FeatureDesign Value
QuantumTrap nonvolatile cellEnables true nvSRAM behavior: no external battery, no wear leveling, no firmware overhead
AutoStore on power lossGuarantees data persistence without host intervention when main supply fails
Software STORE/RECALLAllows deterministic, timed nonvolatile save/restore via standard memory-mapped writes
Hardware STORE via HSBEnables system-level control of STORE timing independent of software state or CPU availability
×16 bus interfaceReduces address/data bus count vs ×8, simplifying PCB layout in space-constrained controllers

Applications

Industrial PLC Data LoggingMedical Device Parameter Storage

Use Scenario: Real-time acquisition of sensor readings and actuator states in programmable logic controllers during mains failure.

IC Role / Device Role / Timing Role: Nonvolatile SRAM storing last valid process values and configuration before power loss.

Use Value: Eliminates need for supercapacitor backup circuitry while ensuring <20 ms STORE completion even during rapid brownout.

Use Scenario: Storing calibrated transducer offsets, therapy settings, and audit logs in portable diagnostic equipment.

IC Role / Device Role / Timing Role: Persistent memory retaining critical calibration data across cold starts and unplanned shutdowns.

Use Value: Meets IEC 62304 Class C software requirements for data integrity without battery maintenance or replacement.

Automotive Body Control ModuleTelecom Line Card Configuration

Use Scenario: Saving window position, mirror angle, and seat memory in vehicle modules subjected to stop-start engine cycles.

IC Role / Device Role / Timing Role: nvSRAM capturing user preferences and fault history during ignition-off transitions.

Use Value: Supports >1 million STORE cycles over 15-year vehicle life, exceeding OEM endurance targets.

Use Scenario: Holding port mapping, VLAN tables, and firmware patch metadata in carrier-grade Ethernet line cards.

IC Role / Device Role / Timing Role: Fast-access nonvolatile memory enabling sub-second service restoration after power interruption.

Use Value: 25 ns access time allows direct CPU attachment without wait states, reducing BOM cost vs flash+RAM combo.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
FM24V10-G1-Mbit F-RAM, 45 ns access, 2.7–3.6 V, no VCAP requiredNo STORE timing uncertainty; unlimited endurance but lower speed and no AutoStore trigger on VCC dropSelect for ultra-high write-cycle count (>1014) where deterministic latency matters more than power-loss autonomy
MB85RS1MT1-Mbit FRAM, 25 ns access, 2.7–3.6 V, SPI interface onlySerial interface increases CPU overhead; lacks parallel bus, HSB, or AutoStore capabilitySelect only if board space is constrained and system already uses SPI peripherals; not drop-in replaceable

Compared with FM24V10-G and MB85RS1MT, CY14B101NA-ZS25XIT uniquely delivers parallel ×16 interface, hardware-triggered STORE via HSB, and autonomous power-loss response - making it optimal for real-time control systems requiring guaranteed, low-latency nonvolatile save without firmware involvement.

Availability

CY14B101NA-ZS25XIT is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device parameter storage, and automotive body control modules requiring stable component supply and long-term lifecycle support.

Supply support for CY14B101NA-ZS25XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT applications.

CY14B101NA-ZS25XIT belongs to Infineon's nvSRAM product line, designed specifically to replace battery-backed SRAM in harsh-environment systems where reliability, zero-maintenance operation, and deterministic power-loss recovery are mandatory.

FAQ

What is the function of the VCAP pin and what capacitor value is required?

The VCAP pin connects to an external capacitor that supplies energy for the AutoStore operation during power loss. A 12 μF tantalum or 22 μF ceramic capacitor is required to ensure reliable STORE completion across the full industrial temperature range and worst-case VCC dropout profile. The internal regulator charges VCAP to ~2.7 V during normal operation; insufficient capacitance causes data corruption during STORE.

How does the HSB pin operate during Hardware STORE and AutoStore?

HSB is an open-drain bidirectional pin. During Hardware STORE, driving HSB LOW initiates the operation; the device then drives HSB LOW until STORE completes, after which it releases the line to HIGH via weak internal pull-up. During AutoStore, HSB is driven LOW automatically upon VCC dropout and remains LOW until STORE finishes - allowing the host to monitor STORE status without polling.

Can CY14B101NA-ZS25XIT be used in a ×8 configuration?

No - CY14B101NA is factory-configured for 64 K × 16 organization only. The "NA" suffix denotes the ×16 variant; the ×8 version is CY14B101LA. Pinouts, address mapping (A0–A15), and data bus width (DQ0–DQ15) are fixed for ×16 operation. Attempting ×8 use would result in incorrect addressing and data corruption.

What happens if AutoStore is enabled but no capacitor is connected to VCAP?

If AutoStore is enabled (default state) and no capacitor is connected to VCAP, the device attempts STORE on power loss using insufficient charge, resulting in incomplete or corrupted data transfer to QuantumTrap cells. The datasheet mandates disabling AutoStore via software sequence before operating without VCAP - otherwise, nonvolatile data integrity cannot be guaranteed.

CY14B101NA-ZS25XIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
25ns
Access Time:
25 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY14B101NA-ZS25XIT FAQ

1.How can I place an order for CY14B101NA-ZS25XIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B101NA-ZS25XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B101NA-ZS25XIT reliable?

The price and inventory of CY14B101NA-ZS25XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B101NA-ZS25XIT is usually 5 days.

3.What payment methods are accepted for CY14B101NA-ZS25XIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B101NA-ZS25XIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B101NA-ZS25XIT?

CY14B101NA-ZS25XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B101NA-ZS25XIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B101NA-ZS25XIT?

For technical support, including CY14B101NA-ZS25XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B101NA-ZS25XIT requirements.

6.How does Aetrix verify that CY14B101NA-ZS25XIT is sourced from the original manufacturer or authorized distributors?

All CY14B101NA-ZS25XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B101NA-ZS25XIT meets industry standards.

7.What is the process for return or replacement of CY14B101NA-ZS25XIT?

All CY14B101NA-ZS25XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14B101NA-ZS25XIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B101NA-ZS25XIT part is unused and in its original packaging.

Return procedure for CY14B101NA-ZS25XIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY14B101NA-ZS25XIT Tags

  • CY14B101NA-ZS25XIT
  • CY14B101NA-ZS25XIT PDF
  • CY14B101NA-ZS25XIT Datasheet
  • CY14B101NA-ZS25XIT Specifications
  • CY14B101NA-ZS25XIT Images
  • Infineon Technologies
  • Infineon Technologies CY14B101NA-ZS25XIT
  • Buy CY14B101NA-ZS25XIT
  • CY14B101NA-ZS25XIT Price
  • CY14B101NA-ZS25XIT Distributor
  • CY14B101NA-ZS25XIT Supplier
  • CY14B101NA-ZS25XIT Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER