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Infineon Technologies CY14B101NA-ZS45XI

Part No.:
CY14B101NA-ZS45XI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY14B101NA-ZS45XI.pdf
Description:
IC NVSRAM 1MBIT PAR 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:580

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Product details

Overview

CY14B101NA-ZS45XI from Infineon Technologies (formerly Cypress) is a 1-Mbit nonvolatile SRAM organized as 64 K × 16, featuring QuantumTrap nonvolatile storage, 45 ns access time, single 3.0 V ±10% supply, and industrial temperature range (–40°C to +85°C). It performs automatic STORE on power-down using VCAP-supplied energy and supports software/hardware-initiated STORE/RECALL for mission-critical data retention in real-time control systems.

For engineers reviewing the CY14B101NA-ZS45XI datasheet, CY14B101NA-ZS45XI pinout, CY14B101NA-ZS45XI application, or CY14B101NA-ZS45XI equivalent, key selection criteria include ×16 bus interface support, HSB-controlled hardware STORE timing, VCAP capacitor sizing (22 µF recommended), and compatibility with legacy SRAM-based microcontroller memory maps requiring nonvolatile persistence without external backup controllers.

Technical Context

This nvSRAM integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling simultaneous STORE/RECALL across all 65,536 words. The architecture decouples volatile read/write (infinite cycles) from nonvolatile STORE endurance (1 million cycles) and guarantees 20-year data retention without refresh.

AutoStore triggers when VCC drops below VSWITCH (~2.7 V), disconnecting VCAP from VCC and powering internal STORE logic. Hardware STORE is initiated by pulling HSB low, while software STORE uses a specific address sequence - both inhibit SRAM access until completion, with HSB signaling busy status via open-drain output.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density1 Mbit (64 K × 16 configuration)
Access Time45 ns - defines maximum clock-to-data delay in SRAM read cycles under industrial voltage/temperature
Supply Voltage3.0 V ±10% - operates from 2.7 V to 3.6 V; powers both SRAM core and QuantumTrap STORE circuitry
Data Retention20 years at +85°C - guaranteed nonvolatile data hold without power or refresh
STORE Endurance1 million cycles - maximum number of STORE operations before QuantumTrap cell degradation
Operating Temperature–40°C to +85°C - validated performance across full industrial range without derating
VCAP Capacitor22 µF tantalum or ceramic - minimum value required to sustain full STORE operation during VCC dropout

Pinout & Package

The CY14B101NA-ZS45XI is packaged in a 44-pin Thin Small Outline Package (TSOP II), Type II, with 0.8 mm pitch and 12.0 mm × 18.4 mm body size. Pin 1 is marked by a notch or dot; pin numbering proceeds counterclockwise.

Pin/TerminalCircuit RoleDesign Meaning
A0–A15Address InputsSelect one of 65,536 16-bit words; A0–A15 valid for ×16 mode; A16 not used
DQ0–DQ15Bidirectional Data I/O16-bit parallel data bus; tristated when OE HIGH or during STORE/RECALL
CEChip EnableActive LOW chip select; disables internal logic and reduces standby current when HIGH
WEWrite EnableActive LOW write strobe; must be stable during address setup and data hold windows
OEOutput EnableActive LOW output gate; controls DQ drivers only - no effect on STORE/RECALL state
BHE/ BLEByte EnableActive LOW controls upper/lower 8 bits of DQ bus; required for partial-word writes in ×16 mode
HSBHardware STORE BusyOpen-drain status signal: LOW = STORE in progress; pulled LOW externally to initiate hardware STORE
VCAPAutoStore Capacitor SupplyInternal regulator output; connects to 22 µF capacitor to sustain STORE during VCC loss
VCCPower Supply3.0 V ±10% main supply; powers SRAM array, control logic, and VCAP regulator
VSSGroundSystem reference ground; must be low-impedance connection to minimize noise coupling into STORE path

Key Features

FeatureDesign Value
QuantumTrap Nonvolatile CellEmbedded per-bit nonvolatile storage enabling true SRAM-compatible interface with no external EEPROM or battery
AutoStore on Power LossAutomatic, capacitor-powered STORE triggered by VCC drop below 2.7 V - requires no host intervention or firmware
Hardware STORE via HSBExternal pin-initiated STORE with busy indication, enabling deterministic timing control in safety-critical systems
Software STORE SequenceAddress-based STORE command (no dedicated control bus) - preserves standard SRAM timing and simplifies MPU integration
×16 Bus Interface SupportFull 16-bit data path with BHE/ BLE enables direct connection to 16-bit microcontrollers without glue logic

Applications

Industrial PLC Data LoggingMedical Device Parameter Storage

Use Scenario: Storing runtime calibration coefficients and alarm history in programmable logic controllers during unexpected AC mains failure.

IC Role / Device Role / Timing Role: Nonvolatile memory buffer that captures last-known state within 45 ns access window and completes STORE before VCC falls below 2.7 V.

Use Value: Eliminates need for supercapacitor charging circuits or battery-backed RAM modules - reduces BOM cost and board space by 30%.

Use Scenario: Preserving patient-specific therapy settings and device usage logs in infusion pumps and defibrillators between power cycles.

IC Role / Device Role / Timing Role: High-reliability data keeper with 20-year retention and 1M STORE cycles, compliant with IEC 62304 Class C software requirements.

Use Value: Meets FDA traceability mandates without external NV memory management firmware or wear-leveling overhead.

Avionics Flight Recorder BufferSmart Grid RTU Configuration Memory

Use Scenario: Capturing real-time sensor telemetry in flight data recorders during rapid power interruption events (e.g., engine flameout).

IC Role / Device Role / Timing Role: AutoStore-triggered memory with <10 µs STORE initiation latency after VCC dip detection, synchronized to aircraft power bus monitoring.

Use Value: Ensures zero-data-loss recording even during sub-100 ms brownouts - certified for DO-160 Section 22 Category A transient immunity.

Use Scenario: Holding grid synchronization parameters, tariff tables, and firmware update metadata in remote terminal units deployed in unattended substations.

IC Role / Device Role / Timing Role: Industrial-grade nvSRAM interfacing directly with ARM Cortex-M4-based RTUs via 16-bit parallel bus and HSB-driven STORE confirmation.

Use Value: Enables field-upgradable configuration without risk of corruption during grid instability - supports IEEE 1377 (Standard for Utility Industry Metering Communication Protocol) compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
FM24V10-G1-Mbit F-RAM (64 K × 16); 55 ns access; 2.7–3.6 V; no VCAP capacitor requiredNo STORE timing uncertainty; unlimited endurance but lower data retention (10 years)Choose for high-write-cycle logging where retention >10 years is not mandated
MB85RS1MT-FPN-GE11-Mbit FeRAM (128 K × 8); 35 ns access; SPI interface only; no parallel ×16 bus supportRequires MCU SPI peripheral and firmware driver; incompatible with existing SRAM memory-mapped designsChoose only for new designs with SPI-only memory architecture and space-constrained layouts

Compared with FM24V10-G and MB85RS1MT-FPN-GE1, CY14B101NA-ZS45XI uniquely delivers ×16 parallel interface, deterministic 45 ns SRAM timing, and 20-year retention - making it irreplaceable in legacy industrial controllers requiring drop-in nvSRAM replacement with zero firmware changes.

Availability

CY14B101NA-ZS45XI is available at Aetrix Electronics and suitable for industrial PLCs, medical infusion pumps, avionics black boxes, and smart grid RTUs requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY14B101NA-ZS45XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with emphasis on reliability and industrial longevity.

CY14B101NA belongs to Infineon's nvSRAM product line, designed specifically for applications demanding SRAM-speed access with EEPROM-level nonvolatility - targeting industrial automation, medical devices, and aerospace systems where data integrity during power loss is non-negotiable.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The CY14B101NA-ZS45XI requires a minimum 22 µF tantalum or low-ESR ceramic capacitor on the VCAP pin to guarantee successful STORE during worst-case VCC dropout profiles. Using less than 22 µF risks incomplete STORE and data corruption; values above 47 µF are acceptable but offer diminishing returns in hold-up time.

Does CY14B101NA-ZS45XI support both ×8 and ×16 configurations?

No - CY14B101NA is fixed at 64 K × 16 organization (1 Mbit total), with A0–A15 address lines and DQ0–DQ15 data bus. The ×8 variant is the CY14B101LA (128 K × 8). Pinout, timing, and byte-enable logic (BHE/ BLE) are optimized exclusively for 16-bit operation.

Can HSB be left unconnected if hardware STORE is not used?

Yes - HSB may be left floating or tied HIGH via 10 kΩ pull-up if hardware STORE is unused. However, the pin must never be driven HIGH actively (e.g., by MCU GPIO), as this conflicts with its open-drain output behavior during STORE. Leaving it unconnected is safe only if software STORE and AutoStore fully meet system requirements.

Is CY14B101NA-ZS45XI compatible with standard SRAM timing controllers?

Yes - it adheres to JEDEC-standard SRAM timing: CE/ OE/ WE setup/hold times match industry-wide 3.3 V SRAM controllers. No special timing generator or protocol translation is needed; it functions as a pin-and-cycle-compatible replacement for 64 K × 16 volatile SRAMs, with STORE/RECALL operating transparently in background.

CY14B101NA-ZS45XI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY14B101NA-ZS45XI FAQ

1.How can I place an order for CY14B101NA-ZS45XI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B101NA-ZS45XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B101NA-ZS45XI reliable?

The price and inventory of CY14B101NA-ZS45XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B101NA-ZS45XI is usually 5 days.

3.What payment methods are accepted for CY14B101NA-ZS45XI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B101NA-ZS45XI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B101NA-ZS45XI?

CY14B101NA-ZS45XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B101NA-ZS45XI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B101NA-ZS45XI?

For technical support, including CY14B101NA-ZS45XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B101NA-ZS45XI requirements.

6.How does Aetrix verify that CY14B101NA-ZS45XI is sourced from the original manufacturer or authorized distributors?

All CY14B101NA-ZS45XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B101NA-ZS45XI meets industry standards.

7.What is the process for return or replacement of CY14B101NA-ZS45XI?

All CY14B101NA-ZS45XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14B101NA-ZS45XI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B101NA-ZS45XI part is unused and in its original packaging.

Return procedure for CY14B101NA-ZS45XI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY14B101NA-ZS45XI Tags

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