Infineon Technologies CY14B101P-SFXIT

Overview

CY14B101P-SFXIT from Infineon Technologies is a 1-Mbit (128K × 8) non-volatile static RAM (nvSRAM) with parallel interface, integrated lithium battery backup, and automatic STORE/RECALL on power loss. It operates across industrial temperature range (–40°C to +85°C), supports 3.3 V ±10% supply, and retains data for 10 years without external power. Used in industrial PLCs for real-time register backup during brownout events.

For engineers reviewing the CY14B101P-SFXIT datasheet, CY14B101P-SFXIT pinout, CY14B101P-SFXIT application, or CY14B101P-SFXIT equivalent, key selection criteria include nvSRAM write endurance (>1 million STORE cycles), deterministic STORE latency (<100 µs), battery-backed retention time, and compatibility with legacy SRAM-based microcontroller bus interfaces.

Technical Context

This nvSRAM integrates a standard asynchronous SRAM core with an on-chip controller, non-volatile storage capacitor array, and voltage-monitoring circuitry. STORE is triggered automatically when V_CC drops below V_TRIP (2.7 V typical), and RECALL occurs on power-up when V_CC exceeds V_PU (2.9 V typical).

The device uses a parallel 8-bit data bus with standard address latching (A0–A16), control signals (CE#, WE#, OE#), and no external hardware STORE initiation required. It is fully compatible with JEDEC-standard 128K×8 SRAM timing and pinout, enabling drop-in replacement in existing designs requiring non-volatility.

Key Specifications

Pinout & Package

Package: 44-pin TSOP-II (10.16 mm × 18.41 mm, 0.8 mm pitch), RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with CY14B101L-SPXC, the CY14B101P-SFXIT eliminates battery management and offers longer retention; versus FM1808-200-BG, it trades unlimited writes for guaranteed 10-year data hold - making it optimal for infrequent but mission-critical state capture.

Availability

CY14B101P-SFXIT is available at Aetrix Electronics and suitable for industrial PLCs, smart meters, factory automation controllers, and railway signaling systems requiring stable component supply and long-term data retention without battery maintenance.

Supply support for CY14B101P-SFXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, security solutions, and memory technologies, with global manufacturing and R&D infrastructure.

CY14B101P-SFXIT belongs to Infineon's nvSRAM product line, designed specifically for industrial and infrastructure applications demanding deterministic non-volatility, long retention, and SRAM drop-in compatibility without firmware redesign.

FAQ

What is the maximum recommended value for the V_CAP supercapacitor?

The CY14B101P-SFXIT datasheet specifies a nominal 0.47 F tantalum capacitor with ≤100 mΩ ESR. Values up to 1.0 F are permissible but do not improve STORE reliability - excess capacitance only extends hold-up time marginally while increasing board area and cost. Capacitors must be rated for ≥5.5 V and operate within –40°C to +85°C.

Does CY14B101P-SFXIT require any initialization or configuration after power-up?

No. The device performs automatic RECALL upon V_CC reaching 2.9 V and is immediately ready for read/write access. No command sequences, registers, or software setup are needed - it behaves identically to a standard 128K×8 SRAM from the host MCU's perspective.

Can CY14B101P-SFXIT be used in place of a standard SRAM without modifying PCB layout?

Yes - the 44-pin TSOP-II footprint, pin assignments (including A0–A16, DQ0–DQ7, CE#/WE#/OE#), and electrical timing match JEDEC-standard 128K×8 SRAMs. No trace routing, pull-up/down, or decoupling changes are required for direct replacement.

How does STORE behavior differ between CY14B101P-SFXIT and battery-backed SRAMs?

Unlike battery-backed SRAMs that retain data as long as battery voltage remains above ~2.0 V, CY14B101P-SFXIT triggers STORE only once per power-loss event - transferring SRAM contents to non-volatile storage within 100 µs. This eliminates cumulative battery drain and guarantees consistent STORE timing regardless of battery age or temperature.