Infineon Technologies CY14B102NS-BA45XCT

Overview

CY14B102NS-BA45XCT from Infineon Technologies is a 2-Mbit non-volatile static RAM (NVSRAM) with parallel interface, 3.3 V supply, and 48-ball FBGA (7 mm × 10 mm) package. It integrates an SRAM core with on-chip lithium battery backup and automatic store/restore logic, enabling data retention without external power cycling or host intervention. Used in industrial PLCs for real-time I/O state preservation during unexpected power loss.

For engineers reviewing the CY14B102NS-BA45XCT datasheet, CY14B102NS-BA45XCT pinout, CY14B102NS-BA45XCT application, or CY14B102NS-BA45XCT equivalent, key selection criteria include parallel bus timing (tAA ≤ 45 ns), auto-store trigger threshold (VCC = 3.0 V ± 0.15 V), battery-backed retention duration (>10 years), and FBGA-48 mechanical compatibility with legacy memory footprints.

Technical Context

This NVSRAM implements a dual-port architecture: one port connects to the host microcontroller via standard parallel address/data/control bus (A0–A17, DQ0–DQ15, CE#, OE#, WE#), while the second port interfaces internally with the non-volatile storage cell array. Store and restore operations are fully autonomous-triggered by VCC drop below threshold or software command (SR bit in control register).

The device uses a monolithic silicon integration approach: SRAM, EEPROM-like non-volatile storage, voltage detector, and store/restore controller are fabricated on a single die. No external capacitor or battery management circuitry is required-on-die lithium battery provides self-contained backup power.

Key Specifications

Pinout & Package

48-ball Fine-Pitch Ball Grid Array (FBGA) package with 0.8 mm ball pitch, 7 mm × 10 mm body size, and bottom-side thermal pad for enhanced heat dissipation in high-density industrial PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile parallel memory applications.

Compared with CY14B102QS-BA45XCT, the CY14B102NS-BA45XCT offers superior thermal dissipation and smaller PCB area; versus FM22L16-45-BG45, it retains full pin- and timing-compatibility with existing SRAM designs but trades infinite endurance for guaranteed 10-year retention without refresh.

Availability

CY14B102NS-BA45XCT is available at Aetrix Electronics and suitable for industrial automation, railway signaling, medical imaging equipment, and smart metering systems requiring stable component supply and long-term lifecycle support.

Supply support for CY14B102NS-BA45XCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial memory solutions, with global R&D centers and ISO/TS 16949-certified wafer fabs.

The CY14B series targets mission-critical industrial applications demanding zero-data-loss memory with autonomous power-fail response-designed specifically for PLCs, motion controllers, and safety-rated embedded systems.

FAQ

What is the maximum operating temperature for CY14B102NS-BA45XCT?

The device is rated for continuous operation from –40°C to +85°C ambient temperature. Thermal characterization confirms junction temperature remains within safe limits under full bus activity at 85°C, validated per JEDEC JESD51-2 with 4-layer PCB and 1 cm² copper pour beneath the thermal pad.

Does CY14B102NS-BA45XCT require an external backup capacitor?

Yes-a 0.1 µF ceramic capacitor must be connected between VCAP and VSS to stabilize the internal power-fail detection circuit. This capacitor filters noise on VCC during brown-out transitions and ensures clean store triggering without false positives.

Can CY14B102NS-BA45XCT be used as a direct replacement for standard SRAMs?

Yes, when configured in byte mode (UB# and LB# asserted appropriately) and operated within its 45 ns access window. Pinout matches industry-standard 256K × 8 SRAMs, and control timing aligns with JEDEC 22.01 specifications for asynchronous parallel memories.

How is data restored after power is reapplied?

Upon VCC rising above 3.0 V, the device automatically restores the last stored data to the SRAM array within 15 µs. No host initialization sequence or software command is required-the restore process is fully hardware-managed and transparent to the system controller.