Infineon Technologies CY14B104LA-BA25XIT

Overview

CY14B104LA-BA25XIT from Cypress Semiconductor is a 4-Mbit non-volatile SRAM (nvSRAM) with 512K × 8 organization, 25 ns access time, single 3 V (+20% / –10%) supply, industrial temperature range (–40°C to +85°C), and QuantumTrap non-volatile storage. It performs automatic STORE on power-down using an external VCAP capacitor and supports software/hardware-controlled STORE/RECALL in systems requiring persistent memory without battery backup - e.g., industrial PLCs logging critical state before brownout.

For engineers reviewing the CY14B104LA-BA25XIT datasheet, CY14B104LA-BA25XIT pinout, CY14B104LA-BA25XIT application, or CY14B104LA-BA25XIT equivalent, key selection criteria include AutoStore timing compliance, VCAP capacitor sizing (0.1 µF), HSB pin behavior during STORE, and ×8 vs ×16 configuration compatibility with host bus width and byte-enable logic.

Technical Context

This nvSRAM integrates standard SRAM array (2048 × 2048) with parallel QuantumTrap non-volatile elements per cell, enabling simultaneous STORE/RECALL across all 524,288 bytes. The architecture decouples volatile read/write (infinite cycles) from non-volatile endurance (1 million STOREs, 20-year retention).

STORE is triggered by power loss (via VCAP discharge below VSWITCH), HSB pin assertion, or software address sequence; RECALL occurs automatically at power-up or via software command. During STORE/RECALL, SRAM access is inhibited, and HSB asserts low to signal busy status - a hardware handshake critical for MPU coordination.

Key Specifications

Pinout & Package

Package: 44-pin Thin Small Outline Package (TSOP II), Type II, RoHS-compliant, surface-mount.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with FM24CL64-G and AS1004-25JCI, CY14B104LA-BA25XIT uniquely combines parallel ×8 bus compatibility, 44-pin TSOP II packaging, and deterministic 25 ns SRAM timing - making it the sole option for legacy industrial MPU designs requiring pin-identical nvSRAM replacement with AutoStore.

Availability

CY14B104LA-BA25XIT is available at Aetrix Electronics and suitable for industrial data loggers, medical device state memory, and telecom line card buffers requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for CY14B104LA-BA25XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.

The CY14B nvSRAM product line was designed specifically for systems needing battery-free, fast, and highly reliable non-volatile memory - targeting applications where data loss during power interruption is unacceptable.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The datasheet specifies a 0.1 µF ceramic capacitor on the VCAP pin. This value ensures sufficient charge to complete one full STORE cycle when VCC drops below VSWITCH (typically 2.5 V). Using a smaller capacitor risks incomplete STORE and data corruption; larger values do not improve reliability but may slow VCAP recharge time between power events.

Can CY14B104LA-BA25XIT operate in ×16 mode?

No. CY14B104LA is strictly a 512K × 8 device. The ×16 variant is the CY14B104NA, which uses a different pinout (including BHE/ BLE pins) and is not pin-compatible. Attempting ×16 operation on CY14B104LA will result in incorrect addressing and data misalignment due to missing byte-enable controls and A18 pin assignment.

How does the HSB pin behave during a software-initiated STORE?

HSB is driven LOW by the device for the entire duration of the software STORE cycle - identical to hardware or AutoStore behavior. After completion, HSB is actively driven HIGH for tHHHD (≤100 ns), then maintained HIGH by the internal 100 kΩ pull-up. External polling of HSB is the recommended method to confirm STORE completion before resuming SRAM access.

Is CE or OE required to be asserted during RECALL at power-up?

No. RECALL is fully autonomous at power-up and occurs before any control signals are sampled. The device restores data from QuantumTrap cells to SRAM as VCC rises above VPU (1.5 V typical), independent of CE, OE, or WE states. However, CE and OE must remain HIGH until RECALL completes (tRC = 20 ms max) to avoid unintended read attempts on uninitialized data.