Infineon Technologies CY14B104LA-BA45XI
- Part No.:
- CY14B104LA-BA45XI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY14B104LA-BA45XI.pdf
- Description:
- IC NVSRAM 4MBIT PARALLEL 48FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:4,344
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Product details
Overview
CY14B104LA-BA45XI from Cypress Semiconductor is a 4-Mbit non-volatile SRAM (nvSRAM) with 512K × 8 organization, 45 ns access time, single 3 V (+20%, –10%) supply operation, industrial temperature range (–40°C to +85°C), and QuantumTrap non-volatile storage technology. It performs automatic STORE on power-down using an external VCAP capacitor and supports software- or hardware-initiated STORE/RECALL cycles for data retention in mission-critical embedded systems such as industrial PLCs and telecom line cards.
For engineers reviewing the CY14B104LA-BA45XI datasheet, CY14B104LA-BA45XI pinout, CY14B104LA-BA45XI application, or CY14B104LA-BA45XI equivalent, key selection considerations include AutoStore timing dependency on VCAP capacitance, HSB pin behavior during STORE busy state, ×8 vs ×16 configuration compatibility, and 1 million STORE endurance versus infinite SRAM read/write cycles.
Technical Context
This nvSRAM integrates standard fast SRAM array (2048 × 2048) with parallel QuantumTrap non-volatile cells per bit, enabling simultaneous STORE/RECALL across all memory locations. The architecture decouples volatile operation from non-volatile persistence: SRAM supports unlimited read/write cycles while QuantumTrap provides 20-year data retention and 1 million STORE cycles.
STORE is triggered by three independent mechanisms-AutoStore (VCC drop below VSWITCH), Hardware STORE (HSB pin assertion), or Software STORE (address sequence)-with built-in write-latch validation preventing spurious stores. RECALL occurs automatically at power-up or via software command, and both operations inhibit SRAM access until completion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (512K × 8 organization) |
| Access Time | 45 ns - defines maximum clock-to-data delay in high-speed SRAM read cycles |
| Supply Voltage | 3.0 V ±10% / +20% - compatible with industrial 3.3 V rails with margin for brown-out tolerance |
| Data Retention | 20 years at +85°C - guaranteed non-volatile data hold without refresh or power |
| STORE Endurance | 1 million cycles - limits total number of STORE operations before QuantumTrap wear-out |
| Operating Temperature | –40°C to +85°C - qualified for industrial control and outdoor telecom equipment |
| VCAP Capacitance | 0.1 µF ceramic - required external capacitor enabling hands-off AutoStore during power loss |
Pinout & Package
Package: 44-pin Thin Small Outline Package (TSOP II), Type II, RoHS-compliant, surface-mount.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Input | 19-bit address bus for 512K × 8 addressing; A17/A18 used only in ×8 mode |
| DQ0–DQ7 | Bidirectional Data I/O | 8-bit parallel data path; tristated when OE HIGH or during STORE/RECALL |
| WE | Write Enable (Active LOW) | Controls SRAM write initiation; must be stable before and during write cycle |
| CE | Chip Enable (Active LOW) | Enables device decoding; deassertion places outputs in high-impedance state |
| OE | Output Enable (Active LOW) | Activates output drivers during read; must be HIGH during write to avoid bus contention |
| VCAP | AutoStore Capacitor Supply | Connects to 0.1 µF capacitor; powers internal STORE circuitry during VCC collapse |
| HSB | Hardware STORE Busy (I/O) | Open-drain status signal: driven LOW during STORE, HIGH otherwise; initiates STORE when externally pulled LOW |
| VCC / VSS | Power / Ground | Single 3 V supply rail and return; requires local decoupling per high-speed SRAM layout practice |
Key Features
| Feature | Design Value |
|---|---|
| AutoStore on Power-Down | Eliminates need for external controller supervision during brown-out; relies solely on VCAP charge |
| Software STORE/RECALL | Enables deterministic, non-interruptible data persistence via address-based command sequences |
| Hardware STORE Trigger (HSB) | Allows system-level event-driven store initiation (e.g., watchdog timeout, fault detection) |
| Write-Latch Validation | Prevents redundant STORE cycles unless SRAM has been modified since last persistence event |
| QuantumTrap Cell Architecture | Delivers 20-year data retention and 1M STORE endurance without battery or EEPROM emulation overhead |
Applications
| Industrial PLC Data Logging | Telecom Line Card Configuration |
|---|---|
|
Use Scenario: Storing real-time I/O state and firmware configuration during unexpected AC loss in programmable logic controllers. IC Role / Device Role / Timing Role: Non-volatile SRAM providing zero-latency SRAM access during normal operation and atomic STORE on power failure. Use Value: Eliminates supercapacitor backup circuitry and avoids EEPROM write latency bottlenecks in cyclic logging. |
Use Scenario: Preserving port mapping, QoS settings, and alarm thresholds across reboots and power cycles in carrier-grade Ethernet switches. IC Role / Device Role / Timing Role: High-reliability configuration memory with immediate recall at power-up and software-controlled store on parameter change. Use Value: Ensures sub-millisecond service restoration without configuration reload delays or flash wear management. |
| Medical Diagnostic Equipment Buffers | Avionics Flight Recorder Memory |
|
Use Scenario: Capturing transient sensor waveforms (ECG, EEG) where loss of power must not erase last acquisition buffer. IC Role / Device Role / Timing Role: Volatile SRAM front-end with guaranteed non-volatile backup via AutoStore on VCC collapse. Use Value: Meets IEC 62304 Class C data integrity requirements without external energy harvesting or battery circuits. |
Use Scenario: Storing critical flight parameters (altitude, attitude, engine metrics) in black box recorders subject to crash-induced power loss. IC Role / Device Role / Timing Role: Radiation-tolerant, high-endurance memory with deterministic STORE trigger via HSB pin on voltage anomaly detection. Use Value: Provides certified 1M STORE cycles and 20-year retention under extended thermal cycling and vibration stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nvSRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK14CA8-45I | 4-Mbit nvSRAM with 45 ns access, but uses SONOS non-volatile technology and lacks HSB pin | No hardware STORE trigger; relies solely on software or power-loss detection via external circuit | Choose when HSB-driven deterministic store is unnecessary and SONOS retention profile suffices |
| FM24V04-G | 4-Mbit F-RAM with unlimited endurance and 15 ns access, but no AutoStore capability and requires external power-fail detection | No integrated VCAP-based power-loss sensing; STORE must be initiated by host MCU interrupt | Choose when ultra-high write endurance and speed outweigh need for autonomous power-down store |
Compared with STK14CA8-45I and FM24V04-G, CY14B104LA-BA45XI uniquely combines hands-off AutoStore, HSB-initiated hardware store, and software-controlled persistence-all within a single 44-pin TSOP package-making it optimal for systems requiring zero-host intervention during power failure.
Availability
CY14B104LA-BA45XI is available at Aetrix Electronics and suitable for industrial PLCs, telecom line cards, medical diagnostic buffers, and avionics flight recorders requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant sourcing.
Supply support for CY14B104LA-BA45XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications infrastructure.
CY14B104LA belongs to Cypress's QuantumTrap nvSRAM product line, engineered specifically for systems demanding battery-free, instant-on non-volatility with SRAM performance and industrial-grade reliability.
FAQ
What is the minimum VCAP capacitance required for reliable AutoStore operation?
The CY14B104LA-BA45XI requires a 0.1 µF ceramic capacitor on the VCAP pin to ensure successful AutoStore during VCC collapse. This value is specified in the DC Electrical Characteristics table (page 9 of datasheet 001-49918 Rev. *O) and validated for 45 ns access time operation across the full industrial temperature range. Larger values do not improve functionality and may slow VCAP recharge.
Can CY14B104LA-BA45XI operate in ×16 mode?
No. The CY14B104LA variant is strictly 512K × 8 organized; the ×16 configuration is exclusive to the CY14B104NA part number. Pinouts, address mapping (A0–A18), and data bus width (DQ0–DQ7 only) confirm this. Attempting ×16 operation will result in incorrect addressing and data corruption.
Is the HSB pin mandatory for functional operation?
No. HSB is optional: AutoStore and Software STORE operate independently. However, HSB is required to detect STORE progress or initiate hardware-triggered STORE. In 44-pin TSOP II packages like BA45XI, HSB is present and functional; its absence in some variants (e.g., ×16 TSOP) does not affect core nvSRAM operation.
How does write-latch validation prevent unnecessary STORE cycles?
The device internally tracks whether any SRAM write has occurred since the last STORE or RECALL. AutoStore and Hardware STORE are suppressed unless this latch is set-preventing redundant non-volatile writes during idle power loss. Software STORE bypasses this check, enabling forced persistence regardless of write activity.
CY14B104LA-BA45XI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (6x10)
CY14B104LA-BA45XI FAQ
1.How can I place an order for CY14B104LA-BA45XI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B104LA-BA45XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B104LA-BA45XI reliable?
The price and inventory of CY14B104LA-BA45XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104LA-BA45XI is usually 5 days.
3.What payment methods are accepted for CY14B104LA-BA45XI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104LA-BA45XI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B104LA-BA45XI?
CY14B104LA-BA45XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B104LA-BA45XI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B104LA-BA45XI?
For technical support, including CY14B104LA-BA45XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104LA-BA45XI requirements.
6.How does Aetrix verify that CY14B104LA-BA45XI is sourced from the original manufacturer or authorized distributors?
All CY14B104LA-BA45XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104LA-BA45XI meets industry standards.
7.What is the process for return or replacement of CY14B104LA-BA45XI?
All CY14B104LA-BA45XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104LA-BA45XI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B104LA-BA45XI part is unused and in its original packaging.
Return procedure for CY14B104LA-BA45XI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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