Infineon Technologies CY14B104LA-ZS25XIT

Overview

CY14B104LA-ZS25XIT from Cypress Semiconductor is a 4-Mbit non-volatile SRAM (nvSRAM) with 512K × 8 organization, 25 ns access time, single 3 V (+20%, –10%) supply operation, industrial temperature range (–40°C to +85°C), and QuantumTrap non-volatile storage technology. It performs automatic STORE on power-down using an external VCAP capacitor and supports software- or hardware-initiated STORE/RECALL cycles - deployed in industrial PLCs for real-time data logging during unexpected power loss.

For engineers reviewing the CY14B104LA-ZS25XIT datasheet, CY14B104LA-ZS25XIT pinout, CY14B104LA-ZS25XIT application, or CY14B104LA-ZS25XIT equivalent, key selection criteria include AutoStore timing compliance, VCAP capacitor sizing (0.1 µF), HSB pin behavior during STORE busy state, and ×8 vs ×16 configuration compatibility with host address/data bus width.

Technical Context

This nvSRAM integrates standard SRAM array (2048 × 2048) with parallel QuantumTrap non-volatile cells per bit, enabling simultaneous STORE/RECALL across all memory locations. It uses internal voltage regulation to charge VCAP and triggers AutoStore when VCC drops below VSWITCH (~2.7 V).

STORE operations are conditional: hardware or AutoStore only execute if at least one write has occurred since last STORE/RECALL; software STORE bypasses this condition. The HSB pin serves dual role - input to initiate STORE and open-drain output indicating active STORE (driven LOW) or completion (driven HIGH then weak-pull-up).

Key Specifications

Pinout & Package

Package: 44-pin Thin Small Outline Package (TSOP II), Type II, RoHS-compliant, surface-mount.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with STK14C88-3AJ and FM24V04-G, CY14B104LA-ZS25XIT uniquely balances deterministic AutoStore timing, integrated VCAP management, and industrial-grade reliability - making it optimal for systems requiring guaranteed sub-millisecond STORE activation without external supervision.

Availability

CY14B104LA-ZS25XIT is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostic devices, telecom base stations, and automotive ADAS ECUs requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for CY14B104LA-ZS25XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

CY14B104LA belongs to Cypress's QuantumTrap nvSRAM product line, engineered specifically for mission-critical applications demanding instantaneous, capacitor-powered non-volatile storage without battery or firmware dependency.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B104LA-ZS25XIT requires a 0.1 µF X7R ceramic capacitor on the VCAP pin, placed within 5 mm of the package per layout guidelines. This value ensures sufficient stored energy to complete a full 4-Mbit STORE within tSTORE (max 20 ms) when VCC collapses to VSWITCH (2.7 V). Larger values do not improve reliability and may delay power-up RECALL timing.

How does the HSB pin behave during power-up and STORE completion?

At power-up, HSB is initially HIGH (weak internal pull-up); after RECALL completes, it remains HIGH until asserted LOW by external logic or AutoStore initiation. Upon STORE completion, HSB is actively driven HIGH for tHHHD (100 ns min), then reverts to weak-pull-up state. During STORE, it is held LOW - providing unambiguous hardware handshake for system-level synchronization.

Can CY14B104LA-ZS25XIT operate in ×16 mode?

No - CY14B104LA-ZS25XIT is specifically the ×8 configuration (512K × 8), as indicated by the "LA" suffix. The ×16 variant is CY14B104NA. Pinout, address mapping (A0–A18), and data bus width (DQ0–DQ7 only) are fixed for this part; attempting ×16 operation will result in incorrect addressing and data corruption.

What happens if a write occurs during an active STORE or RECALL cycle?

SRAM read and write operations are fully inhibited during STORE or RECALL - any CE/OE/WE transitions are ignored and DQ lines remain tristated. The device asserts HSB LOW and blocks address/data bus access until the non-volatile operation completes. No data corruption occurs, but host software must poll HSB or implement timeout-based retry logic.