Infineon Technologies CY14B104LA-ZS45XI
- Part No.:
- CY14B104LA-ZS45XI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY14B104LA-ZS45XI.pdf
- Description:
- IC NVSRAM 4MBIT PAR 44TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:404
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Product details
Overview
CY14B104LA-ZS45XI from Cypress Semiconductor is a 4-Mbit non-volatile SRAM (nvSRAM) with 512K × 8 organization, 45 ns access time, single 3 V (+20%, –10%) supply operation, industrial temperature range (–40°C to +85°C), and QuantumTrap non-volatile storage technology. It performs automatic STORE on power-down using an external VCAP capacitor and supports software- or hardware-triggered STORE/RECALL for data retention in metering, industrial PLCs, and network equipment.
For engineers reviewing the CY14B104LA-ZS45XI datasheet, CY14B104LA-ZS45XI pinout, CY14B104LA-ZS45XI application, or CY14B104LA-ZS45XI equivalent, key selection considerations include AutoStore timing dependency on VCAP capacitance, HSB pin behavior during STORE initiation, ×8 vs ×16 configuration compatibility, and 1 million STORE endurance versus infinite SRAM read/write cycles.
Technical Context
This nvSRAM integrates standard SRAM cells with parallel QuantumTrap non-volatile elements per cell, enabling simultaneous STORE/RECALL across all memory locations. It operates in ×8 mode (A0–A18, DQ0–DQ7), supports three STORE methods-AutoStore (power-loss triggered), Hardware STORE (HSB pin assertion), and Software STORE (address sequence)-and inhibits SRAM access during STORE/RECALL cycles.
The device uses internal voltage regulation to charge VCAP, disconnects VCAP from VCC when VCC drops below VSWITCH (~2.5 V), and requires ≥0.1 µF ceramic capacitor on VCAP for reliable AutoStore. HSB functions as both input (to initiate STORE) and open-drain output (to signal busy state), with internal 100 kΩ pull-up and tHHHD high-pulse duration after STORE completion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (512K × 8 organization) |
| Access Time | 45 ns - defines maximum clock-to-data valid delay in high-speed SRAM read cycles |
| Supply Voltage | 3.0 V ±10% / +20% - mandates compatible LDO or regulator with tight tolerance and low dropout |
| Data Retention | 20 years - guaranteed non-volatile data hold without power or refresh |
| STORE Endurance | 1 million cycles - limits total number of STORE operations over lifetime |
| Operating Temperature | –40°C to +85°C - validated for industrial environments without derating |
| VCAP Capacitance | ≥0.1 µF ceramic - minimum value required to complete one full AutoStore at VCC = 3.0 V |
Pinout & Package
Package: 44-pin Thin Small Outline Package (TSOP II), Type II, RoHS-compliant, surface-mount.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Input | 19-bit address bus for 512K × 8 addressing; A17/A18 used only in ×8 mode |
| DQ0–DQ7 | Bidirectional Data I/O | 8-bit data bus; tristated when OE HIGH or during STORE/RECALL |
| WE | Write Enable (Active LOW) | Controls write latch enable; must be held HIGH during AutoStore to avoid bus contention |
| CE | Chip Enable (Active LOW) | Selects device for read/write; disables outputs and reduces standby current when HIGH |
| OE | Output Enable (Active LOW) | Enables DQ drivers during read; must be HIGH during write to prevent contention |
| HSB | Hardware STORE Busy | Open-drain status/output: driven LOW during STORE; pulled HIGH post-STORE via internal 100 kΩ resistor |
| VCAP | AutoStore Capacitor Supply | Connects to ≥0.1 µF ceramic cap; powers STORE operation during VCC brownout |
| VCC | Power Supply | 3 V core supply; powers SRAM array, control logic, and VCAP charging regulator |
| VSS | Ground | Reference return path for all signals and power; requires low-inductance PCB connection |
Key Features
| Feature | Design Value |
|---|---|
| Hands-off AutoStore | Automatic STORE triggered by VCC drop below VSWITCH, requiring only external VCAP capacitor |
| Parallel STORE/RECALL | All 512K memory cells store or recall simultaneously, eliminating block-wise latency overhead |
| Three STORE Initiation Modes | Software (address sequence), Hardware (HSB pin), and AutoStore (power-loss) - enables flexible system-level control |
| Infinite SRAM Read/Write Cycles | Standard SRAM interface behavior preserved; no wear-out mechanism during volatile operation |
| Write-Conditioned STORE | Hardware and AutoStore ignored unless at least one SRAM write occurred since last STORE/RECALL - prevents spurious stores |
Applications
| Smart Electricity Metering | Industrial Programmable Logic Controllers |
|---|---|
|
Use Scenario: Capturing real-time energy consumption data during grid instability or scheduled power cycling. IC Role / Device Role / Timing Role: Non-volatile data buffer preserving last-read kWh values and tamper logs without battery backup. Use Value: Eliminates supercapacitor or coin-cell dependencies while guaranteeing 20-year data retention across 1M STORE cycles. |
Use Scenario: Storing ladder logic state, I/O configuration, and fault history in factory automation controllers. IC Role / Device Role / Timing Role: Fast-access SRAM for runtime execution, backed by deterministic STORE/RECALL on power loss or reset. Use Value: Enables sub-millisecond RECALL on power-up, reducing system boot time and avoiding firmware reload delays. |
| Telecom Line Cards | Medical Diagnostic Equipment |
|
Use Scenario: Preserving port status, alarm registers, and configuration tables during hot-swap or maintenance power interruption. IC Role / Device Role / Timing Role: ×8 interface-compatible nvSRAM interfacing directly with legacy 8-bit microcontrollers or FPGAs. Use Value: Maintains operational continuity without external NVRAM controllers or EEPROM emulation firmware overhead. |
Use Scenario: Securing patient calibration settings, sensor offset data, and diagnostic session logs before emergency shutdown. IC Role / Device Role / Timing Role: Fail-safe memory element meeting IEC 62304 Class C requirements for data integrity under power fault. Use Value: Provides certified 20-year retention and deterministic STORE timing (tSTORE ≤ 20 ms typical) for audit-trail compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nvSRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK14C88-45I | 4-Mbit nvSRAM, 45 ns, ×8, 3 V, but uses SONOS non-volatile technology and lacks HSB pin | No hardware STORE trigger; relies solely on software STORE or power-loss detection without VCAP regulation | Choose if HSB signaling is unnecessary and simpler power-loss detection suffices |
| FM24V10-G | 1-Mbit F-RAM, 3 V, 55 ns, unlimited endurance, but lower density and no AutoStore capacitor interface | Eliminates STORE timing uncertainty and VCAP design complexity, but requires firmware adaptation for 1-Mbit limit | Prefer for ultra-high-write-cycle systems where STORE latency cannot be tolerated |
Compared with STK14C88-45I and FM24V10-G, CY14B104LA-ZS45XI uniquely combines 4-Mbit density, deterministic AutoStore via regulated VCAP, and HSB-driven hardware control-making it optimal for industrial systems requiring guaranteed power-loss data capture without firmware intervention.
Availability
CY14B104LA-ZS45XI is available at Aetrix Electronics and suitable for smart metering, industrial PLCs, telecom line cards, and medical diagnostic equipment requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for CY14B104LA-ZS45XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.
CY14B104LA belongs to Cypress's QuantumTrap nvSRAM product line, engineered specifically for systems needing battery-free, fast, and deterministic non-volatile data retention during uncontrolled power loss.
FAQ
What is the minimum VCAP capacitance required for reliable AutoStore operation?
The CY14B104LA-ZS45XI requires a minimum 0.1 µF X7R ceramic capacitor on the VCAP pin to ensure successful AutoStore at VCC = 3.0 V. Larger values (e.g., 0.22 µF) improve margin under low-VCC or high-temperature conditions. Tantalum or electrolytic capacitors are not recommended due to ESR and leakage limitations specified in the datasheet.
Can CY14B104LA-ZS45XI operate in ×16 mode?
No. The CY14B104LA variant is strictly 512K × 8 (8-bit data bus); the ×16 configuration is exclusive to the CY14B104NA part number. Pinout, address mapping (A0–A18), and DQ pin count (DQ0–DQ7 only) confirm ×8-only operation for this device.
How does the HSB pin behave during a Software STORE cycle?
During a Software STORE, HSB is driven LOW by the device to indicate STORE execution, remains LOW until completion, then pulses HIGH for tHHHD (≤100 ns), and reverts to HIGH via its internal 100 kΩ pull-up. This behavior matches Hardware STORE and AutoStore, enabling uniform system-level busy monitoring regardless of initiation method.
Is the 45 ns access time guaranteed across the full industrial temperature range?
Yes. The 45 ns access time (tAA) is specified and tested over the full –40°C to +85°C operating temperature range and 3.0 V ±10% supply voltage. No derating is required for industrial use; timing parameters in the datasheet's AC Switching Characteristics table include min/max values across these conditions.
CY14B104LA-ZS45XI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY14B104LA-ZS45XI FAQ
1.How can I place an order for CY14B104LA-ZS45XI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B104LA-ZS45XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B104LA-ZS45XI reliable?
The price and inventory of CY14B104LA-ZS45XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104LA-ZS45XI is usually 5 days.
3.What payment methods are accepted for CY14B104LA-ZS45XI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104LA-ZS45XI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B104LA-ZS45XI?
CY14B104LA-ZS45XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B104LA-ZS45XI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B104LA-ZS45XI?
For technical support, including CY14B104LA-ZS45XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104LA-ZS45XI requirements.
6.How does Aetrix verify that CY14B104LA-ZS45XI is sourced from the original manufacturer or authorized distributors?
All CY14B104LA-ZS45XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104LA-ZS45XI meets industry standards.
7.What is the process for return or replacement of CY14B104LA-ZS45XI?
All CY14B104LA-ZS45XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104LA-ZS45XI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B104LA-ZS45XI part is unused and in its original packaging.
Return procedure for CY14B104LA-ZS45XI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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