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Infineon Technologies CY14B104L-BA20XCT
- Part No.:
- CY14B104L-BA20XCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY14B104L-BA20XCT.pdf
- Description:
- IC NVSRAM 4MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,231
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Product details
Overview
CY14B104L-BA20XCT from Cypress Semiconductor is a 4 Mbit (512K × 8) nonvolatile SRAM with QuantumTrap® technology, operating at 3V ±10%, 20 ns access time, and supporting automatic STORE on power loss via VCAP capacitor. It functions as a drop-in SRAM replacement in systems requiring persistent data retention without battery backup - deployed in industrial PLCs, medical data loggers, and telecom line cards where power interruption resilience is critical.
For engineers reviewing the CY14B104L-BA20XCT datasheet, CY14B104L-BA20XCT pinout, CY14B104L-BA20XCT application, or CY14B104L-BA20XCT equivalent, key selection criteria include x8 vs. x16 configuration mapping, HSB-driven hardware store timing, VCAP capacitor sizing (0.1 µF), AutoStore enable/disable sequence, and compatibility with 48-ball FBGA footprint.
Technical Context
The CY14B104L-BA20XCT integrates parallel SRAM and QuantumTrap nonvolatile storage per cell, enabling simultaneous infinite SRAM read/write cycles and up to 200,000 STORE cycles. Its architecture supports three STORE initiation modes: AutoStore (power-down triggered), software-addressed (6-cycle CE-read sequence), and hardware-triggered via HSB pin assertion.
RECALL occurs automatically on power-up or via software sequence; both operations inhibit SRAM access for duration tHRECALL (max 20 ms) or tSTORE (max 20 ms). The device uses A0–A18 addressing (x8), DQ0–DQ7 bidirectional I/O, and requires VCAP ≥0.1 µF to guarantee STORE completion during VCC dropout below VSWITCH (2.2 V).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (512K × 8 organization) |
| Access Time | 20 ns - defines maximum clock-to-data valid delay in high-speed SRAM read cycles |
| Supply Voltage | 3.0 V ±10% - operates across 2.7 V to 3.6 V, eliminating need for separate 5 V or 3.3 V regulators |
| STORE Endurance | 200,000 cycles - limits total nonvolatile write events before QuantumTrap wear-out |
| Data Retention | 20 years at +85°C - guarantees data integrity without refresh or power in industrial environments |
| Operating Temperature | –40°C to +85°C - qualified for extended industrial temperature range operation |
| Package | 48-ball FBGA (6 mm × 8 mm, 0.8 mm pitch) - surface-mount package compatible with automated PCB assembly |
Pinout & Package
Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm, 0.8 mm ball pitch, RoHS-compliant, lead-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Input | Selects one of 524,288 bytes in x8 mode; A18 used only in x8 configuration |
| DQ0–DQ7 | Bidirectional Data I/O | 8-bit parallel data path for SRAM read/write; tri-stated when OE HIGH or during STORE/RECALL |
| WE | Write Enable (Active LOW) | Controls write initiation; must be held HIGH during AutoStore disable/enable sequences |
| CE | Chip Enable (Active LOW) | Enables device for read/write; required for all software-initiated STORE/RECALL address sequences |
| OE | Output Enable (Active LOW) | Activates DQ outputs during reads; must be HIGH during writes to avoid bus contention |
| VCAP | AutoStore Capacitor Supply | Connects external 0.1 µF capacitor to sustain STORE operation during VCC dropout |
| HSB | Hardware Store Busy (Open Drain) | Drives LOW during STORE/RECALL; externally pulled LOW to trigger hardware STORE |
| VCC / VSS | Power / Ground | Single 3V supply; VSS must be low-impedance connection to system ground plane |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap® Nonvolatile Storage | Embedded per-cell nonvolatile element enables 20-year data retention without batteries or external EEPROM |
| AutoStore® on Power Loss | Automatic STORE triggered by VCC falling below 2.2 V, using charge stored on VCAP capacitor |
| Software-Controlled STORE/RECALL | 6-cycle CE-read address sequence (e.g., 0x4E38 → 0x8FC0) initiates STORE without hardware signal dependency |
| Hardware Store Trigger (HSB) | External LOW pulse on HSB pin starts conditional STORE - only if SRAM write occurred since last STORE/RECALL |
| Infinite SRAM Read/Write Cycles | Standard SRAM interface behavior preserved; no endurance limitation on volatile memory access |
Applications
| Industrial Data Logger | Telecom Line Card |
|---|---|
|
Use Scenario: Captures sensor readings or event timestamps in factory automation systems during unexpected AC mains failure. IC Role / Device Role / Timing Role: Nonvolatile SRAM retains last valid measurement set during brownout, recalled on reboot without firmware intervention. Use Value: Eliminates need for supercapacitor-based backup circuitry and reduces BOM count by replacing SRAM + EEPROM combo. |
Use Scenario: Stores configuration registers and call-state buffers in carrier-grade DSLAMs exposed to frequent power cycling. IC Role / Device Role / Timing Role: Acts as configuration scratchpad with guaranteed recall within 20 ms of power restoration. Use Value: Enables sub-second service recovery after grid outage, meeting ITU-T G.992.3 fast-retrain requirements. |
| Medical Infusion Pump | Programmable Logic Controller (PLC) |
|
Use Scenario: Logs drug delivery history and alarm events in Class IIa infusion devices subject to IEC 62304 safety requirements. IC Role / Device Role / Timing Role: Stores critical therapy parameters in nonvolatile memory with deterministic STORE latency ≤20 ms. Use Value: Meets FDA-required audit trail persistence without adding safety-critical firmware complexity for EEPROM wear leveling. |
Use Scenario: Holds ladder logic state and I/O mapping in DIN-rail mounted PLCs operating in harsh factory environments. IC Role / Device Role / Timing Role: Serves as volatile program RAM with automatic power-fail STORE to preserve machine state across maintenance shutdowns. Use Value: Reduces mean time to recovery (MTTR) from hours to seconds by restoring exact operational context post-power cycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK14CA8-3LF35I | 4 Mbit nvSRAM (512K × 8), 35 ns access, 3.3 V ±10%, 44-pin TSOP II package | Lacks HSB pin and software STORE/RECALL sequences; relies solely on AutoStore with larger VCAP (1 µF) | Select when board layout constraints favor TSOP II and deterministic 35 ns timing suffices over 20 ns performance. |
| FM24V10-G | 1 Mbit F-RAM (128K × 8), 45 ns access, 2.7–3.6 V, SOIC-8 package | Unlimited STORE endurance (10¹⁴ cycles), but lower density and no hardware STORE trigger or VCAP-based power-loss detection | Select when ultra-high STORE endurance is prioritized over density and power-loss autonomy is handled externally. |
Compared with STK14CA8-3LF35I and FM24V10-G, the CY14B104L-BA20XCT uniquely combines 20 ns speed, HSB-controlled hardware STORE, and full software sequence control - making it optimal for real-time systems requiring both performance and deterministic nonvolatile write assurance.
Availability
CY14B104L-BA20XCT is available at Aetrix Electronics and suitable for industrial data loggers, telecom line cards, medical infusion pumps, and programmable logic controllers requiring stable component supply with guaranteed long-term lifecycle support.
Supply support for CY14B104L-BA20XCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.
The CY14B104L belongs to Cypress's nvSRAM product line, engineered specifically to replace battery-backed SRAM in mission-critical systems where zero-maintenance, long-life, and deterministic power-loss data preservation are mandatory.
FAQ
What is the minimum VCAP capacitance required for reliable AutoStore operation?
The CY14B104L-BA20XCT requires a minimum 0.1 µF ceramic capacitor on the VCAP pin, rated for ≥10 V, placed within 5 mm of the device. This value ensures sufficient energy to complete the STORE operation when VCC drops below 2.2 V. Larger values (e.g., 1 µF) extend the allowable dropout window but do not improve reliability beyond specification.
Can the HSB pin be left unconnected if hardware STORE is not used?
Yes - the HSB pin has an internal weak pull-up and may be left floating if unused. When disconnected, the pin remains HIGH and does not initiate STORE. However, if external circuitry monitors HSB for STORE status, a 10 kΩ pull-up to VCC is recommended to ensure clean logic levels during power sequencing.
Does the software STORE sequence require OE to be asserted?
No - the software STORE sequence (0x4E38 → 0x8FC0) uses CE-controlled reads; OE may be HIGH or LOW. What matters is that six consecutive CE-active read cycles occur at the exact addresses in order, with WE held HIGH throughout. OE state affects only output driver enablement, not sequence recognition.
How does AutoStore prevent spurious writes during brief voltage dips?
The CY14B104L-BA20XCT includes a voltage-sense threshold (VSWITCH = 2.2 V) and internal hysteresis. STORE is only initiated if VCC falls below VSWITCH *and* remains there long enough for the VCAP capacitor to discharge to the level needed to sustain the operation - typically rejecting transients shorter than 100 µs.
CY14B104L-BA20XCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (6x10)
CY14B104L-BA20XCT FAQ
1.How can I place an order for CY14B104L-BA20XCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B104L-BA20XCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B104L-BA20XCT reliable?
The price and inventory of CY14B104L-BA20XCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104L-BA20XCT is usually 5 days.
3.What payment methods are accepted for CY14B104L-BA20XCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104L-BA20XCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B104L-BA20XCT?
CY14B104L-BA20XCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B104L-BA20XCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B104L-BA20XCT?
For technical support, including CY14B104L-BA20XCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104L-BA20XCT requirements.
6.How does Aetrix verify that CY14B104L-BA20XCT is sourced from the original manufacturer or authorized distributors?
All CY14B104L-BA20XCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104L-BA20XCT meets industry standards.
7.What is the process for return or replacement of CY14B104L-BA20XCT?
All CY14B104L-BA20XCT units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104L-BA20XCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B104L-BA20XCT part is unused and in its original packaging.
Return procedure for CY14B104L-BA20XCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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