Infineon Technologies CY14B104L-BA25XI

Overview

CY14B104L-BA25XI from Cypress Semiconductor is a 4 Mbit (512K × 8) nonvolatile SRAM with QuantumTrap® technology, operating at 3V ±10%, 25 ns access time, and industrial temperature range (–40°C to +85°C). It integrates fast SRAM with on-chip nonvolatile storage, enabling automatic STORE on power loss via VCAP capacitor and software- or hardware-triggered RECALL. Used in industrial PLCs for real-time data retention during brownouts.

For engineers reviewing the CY14B104L-BA25XI datasheet, CY14B104L-BA25XI pinout, CY14B104L-BA25XI application, or CY14B104L-BA25XI equivalent, key selection criteria include AutoStore timing (tSTORE = 12 ms), VCAP capacitance requirement (0.1 µF), HSB pin behavior during store busy, and x8 vs. x16 configuration compatibility.

Technical Context

The CY14B104L-BA25XI implements a dual-cell architecture: standard SRAM for high-speed read/write and embedded QuantumTrap nonvolatile elements per cell. STORE transfers data from SRAM to nonvolatile memory; RECALL restores it on power-up - both operations execute in parallel across all cells.

AutoStore initiates automatically when VCC drops below VSWITCH (2.7 V typ.), using charge stored on the external VCAP capacitor. Hardware STORE is triggered by pulling HSB low; software STORE uses a six-address CE-read sequence. HSB serves as both input (store request) and open-drain output (busy indicator).

Key Specifications

Pinout & Package

Package: 48-ball FBGA (6 mm × 8 mm, 0.8 mm pitch), RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with FM24V04-G and AS4C4M16SA-6TCN, the CY14B104L-BA25XI offers balanced trade-offs: integrated VCAP regulation reduces component count, HSB enables deterministic hardware coordination, and 25 ns access meets most industrial MCU timing budgets without over-engineering.

Availability

CY14B104L-BA25XI is available at Aetrix Electronics and suitable for industrial PLCs, smart metering platforms, medical infusion devices, and factory automation controllers requiring stable component supply with long lifecycle assurance.

Supply support for CY14B104L-BA25XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and mixed-signal ICs for industrial, automotive, and IoT applications, headquartered in San Jose, CA.

The CY14B104L belongs to Cypress's nvSRAM product line, engineered specifically for mission-critical data retention in systems where battery backup is impractical and EEPROM write latency is unacceptable.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B104L-BA25XI requires a 0.1 µF X7R ceramic capacitor on the VCAP pin. This value is specified in the DC Electrical Characteristics table (page 7 of datasheet 001-07102 Rev. *L) and ensures sufficient energy for one complete STORE operation during VCC dropout events lasting ≥100 µs at 25°C.

Can the HSB pin be left unconnected if hardware STORE is not used?

Yes - the HSB pin has an internal weak pull-up and may be left floating if unused. When disconnected, it remains HIGH during normal operation and does not affect SRAM functionality. However, leaving it unconnected forfeits hardware-initiated STORE capability and real-time busy indication during AutoStore.

Does software STORE require OE# to be asserted during the six-address sequence?

No - the software STORE sequence uses CE#-controlled reads only; OE# may be HIGH or LOW. The datasheet explicitly states "it is not necessary that OE be LOW for a valid sequence" (page 5), as the address decoding and command recognition occur independently of output buffer enable state.

How does the CY14B104L-BA25XI handle partial STORE failures due to insufficient VCAP charge?

The device performs STORE verification: if VCAP voltage falls below the internal threshold during execution, the operation aborts and HSB returns HIGH. No partial or corrupted data is written to QuantumTrap cells - the nonvolatile array remains unchanged, preserving prior valid data integrity.